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MT48LC4M32B2P-6AIT:LTR

Micron Technology

MT48LC4M32B2P-6AIT:LTR by Micron Technology

Micron Technology's MT48LC4M32B2P-6AIT:LTR is a 4MX32 Synchronous DRAM with 3.3V supply voltage, operating at -40 to 85 °C. It features self-refresh mode, industrial temperature grade, and offers 5.4 ns max access time. Ideal for applications requiring high-speed memory performance in harsh environments.

Median Price

$13.000

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 4,000 parts In-Stock

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-

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$13.000

4,000

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$13.000

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 3,324 parts In-Stock

1+ parts

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3,324

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Digiode

USA . 2,349 parts In-Stock

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2,349

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Vyrian

USA . 1,631 parts In-Stock

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1,631

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Nova Conductors

Japan . 15 parts In-Stock

1+ parts

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15

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Semi Source

USA . 8 parts In-Stock

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8

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Distributors (Availability)

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Corohmni

South Africa . 340 parts In-Stock

1+ parts

$2.566

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340

$2.566

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Semicontronic

India . 7,634 parts In-Stock

1+ parts

$7.440

100+ parts

$7.254

1k+ parts

$7.217

10k+ parts

-

7,634

$7.440

$7.254

$7.217

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Ampacity Inc.

Singapore . 3,865 parts In-Stock

1+ parts

$7.440

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3,865

$7.440

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Perfect Parts

USA . 4,480 parts In-Stock

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4,480

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Argo Parts USA

USA . 3,039 parts In-Stock

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3,039

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S.R.D Solutions

India . 3,000 parts In-Stock

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3,000

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Corphita

USA . 1,096 parts In-Stock

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1,096

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Continental Prestige Electronics

USA . 973 parts In-Stock

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973

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Bastille Electronics

Australia . 700 parts In-Stock

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700

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Microchip USA

USA . 128 parts In-Stock

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128

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Overview

Discover unparalleled performance and reliability with the MT48LC4M32B2P-6AIT:LTR by Micron Technology. As a leader in the industry, Micron Technology delivers top-notch DRAM products that excel in a variety of applications. With a focus on quality and innovation, this product offers customers unmatched value, benefits, and advantages. Whether you're looking for high-speed data processing or efficient multitasking, the MT48LC4M32B2P-6AIT:LTR is the perfect choice for all your memory needs. Upgrade to Micron Technology today and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material provides durability and reliability to the product, making it suitable for various applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly onto circuit boards, saving space and reducing production costs.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transferred efficiently and accurately, improving overall performance of the product.

Nominal Supply Voltage: 3.3 V

Operating at a nominal supply voltage of 3.3V provides a good balance between power consumption and performance for the product.

Temperature Grade: INDUSTRIAL

Industrial temperature grade ensures reliability and stability of the product even in harsh environmental conditions.

Memory IC Type: SYNCHRONOUS DRAM

The use of Synchronous DRAM technology offers fast and reliable data access, essential for high-performance computing applications.

Technical Specifications

DRAM MT48LC4M32B2P-6AIT:LTR attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PDSO-G86

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

86

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

MT48LC4M32B2P-6AIT:LTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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