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AS4C256M16D3LC-12BIN

Alliance Memory

AS4C256M16D3LC-12BIN by Alliance Memory

Alliance Memory's AS4C256M16D3LC-12BIN is a 256MX16 DDR3L DRAM with 800 MHz clock frequency. Operating at 1.35V, it offers 8192 refresh cycles and supports multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in a compact form factor.

Median Price

$15.570

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,224 parts In-Stock

1+ parts

$16.830

100+ parts

$14.762

1k+ parts

$13.458

10k+ parts

-

1,224

$16.830

$14.762

$13.458

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Mouser Electronics

USA . 9 parts In-Stock

1+ parts

$33.270

100+ parts

$28.070

1k+ parts

$27.350

10k+ parts

-

9

$33.270

$28.070

$27.350

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Verical

USA . 836 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$7.468

10k+ parts

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836

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-

$7.468

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Future Electronics

Canada . 627 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$14.310

10k+ parts

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627

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-

$14.310

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$8.980

100+ parts

-

1k+ parts

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100

$8.980

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-

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TME

Poland . 128 parts In-Stock

1+ parts

$11.840

100+ parts

$9.470

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128

$11.840

$9.470

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Kruse

Germany . 247,677 parts In-Stock

1+ parts

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247,677

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NAC Semi

USA . 25,916 parts In-Stock

1+ parts

-

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$17.700

10k+ parts

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25,916

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$17.700

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Chip Stock

USA . 6,500 parts In-Stock

1+ parts

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6,500

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Vyrian

USA . 5,453 parts In-Stock

1+ parts

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5,453

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Kruse Electronics AG

Switzerland . 4,614 parts In-Stock

1+ parts

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4,614

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Cyclops Electronics Ltd

UK . 3,146 parts In-Stock

1+ parts

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3,146

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VNN

France . 3,057 parts In-Stock

1+ parts

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3,057

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ARCO, INC.

USA . 1,500 parts In-Stock

1+ parts

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1,500

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Classic Components Corporation

USA . 1,463 parts In-Stock

1+ parts

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1,463

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IBS Electronics

USA . 836 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$40.546

10k+ parts

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836

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$40.546

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Rutronik

Germany . 627 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$8.210

10k+ parts

$7.980

627

-

-

$8.210

$7.980

Micros

Poland . 18 parts In-Stock

1+ parts

-

100+ parts

$10.425

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18

-

$10.425

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Partservice

France . 18 parts In-Stock

1+ parts

-

100+ parts

$9.395

1k+ parts

$9.395

10k+ parts

$9.395

18

-

$9.395

$9.395

$9.395

Micros sp.j. W. Kędra i J. Lic

Poland . 18 parts In-Stock

1+ parts

-

100+ parts

$10.064

1k+ parts

$10.064

10k+ parts

$10.064

18

-

$10.064

$10.064

$10.064

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 170 parts In-Stock

1+ parts

$3.840

100+ parts

-

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170

$3.840

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Continental Prestige Electronics

USA . 2,532 parts In-Stock

1+ parts

$8.188

100+ parts

-

1k+ parts

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10k+ parts

$8.024

2,532

$8.188

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-

$8.024

Netroflash

USA . 100 parts In-Stock

1+ parts

$8.980

100+ parts

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100

$8.980

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QUARKTWIN TECHNOLOGY LTD

USA . 11,135 parts In-Stock

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11,135

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Perfect Parts

USA . 4,931 parts In-Stock

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4,931

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Argo Parts USA

USA . 3,584 parts In-Stock

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3,584

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Authorized Procurement Solutions

USA . 1,922 parts In-Stock

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1,922

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GreenTree Electronics

Israel . 1,672 parts In-Stock

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1,672

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Eastek

USA . 495 parts In-Stock

1+ parts

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100+ parts

$10.860

1k+ parts

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10k+ parts

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495

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$10.860

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Overview

Experience the exceptional quality of Alliance Memory with the AS4C256M16D3LC-12BIN DDR3L DRAM. This versatile memory chip offers unparalleled performance and reliability, making it perfect for a wide range of applications. From consumer electronics to industrial machinery, this memory module delivers optimal efficiency and speed. Trust Alliance Memory to provide you with top-notch technology that enhances your products and elevates your business. Choose the AS4C256M16D3LC-12BIN for superior performance and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the DRAM, ensuring a longer lifespan.

Surface Mount: YES

The ability to be surface mounted allows for easy integration into various electronic devices, making it versatile and easy to use.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures that data is transferred at a consistent and reliable rate, enhancing overall performance.

Nominal Supply Voltage / Vsup (V): 1.35

The low supply voltage helps in reducing power consumption, making the DRAM more energy-efficient.

Maximum Clock Frequency (fCLK): 800 MHz

With a high clock frequency, the DRAM can operate at faster speeds, enhancing the overall performance of the device it is used in.

Technology: CMOS

The CMOS technology offers low power consumption, high speed, and excellent noise immunity, making the DRAM efficient and reliable.

Memory IC Type: DDR3L DRAM

DDR3L DRAM offers improved performance and efficiency compared to previous generations, making it a suitable choice for modern devices.

Technical Specifications

DRAM AS4C256M16D3LC-12BIN attributes and parameters. Explore more DRAM devices from Alliance Memory

Specs

Access Mode:

MULTI BANK PAGE BURST

Maximum Clock Frequency (fCLK):

800 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

4,8

JESD-30 Code:

R-PBGA-B96

JESD-609 Code:

e1

Length:

13.5 mm

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

96

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA96,9X16,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

4,8

Maximum Standby Current:

.008 Amp

Maximum Supply Current:

235 mA

Maximum Supply Voltage (Vsup):

1.45 V

Minimum Supply Voltage (Vsup):

1.283 V

Nominal Supply Voltage / Vsup (V):

1.35

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7.5 mm

Trade Compliance

AS4C256M16D3LC-12BIN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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