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MT40A1G8SA-062E:R

Micron Technology

MT40A1G8SA-062E:R by Micron Technology

Micron Technology's MT40A1G8SA-062E:R is a DDR4 DRAM with 1.2V supply voltage, 1GX8 organization, and 1073741824 words capacity. It operates synchronously with self-refresh capability and common I/O type. Ideal for applications requiring high memory density and fast data access in thin profile devices.

Median Price

$8.251

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 2,026 parts In-Stock

1+ parts

$7.590

100+ parts

$7.590

1k+ parts

$7.590

10k+ parts

-

2,026

$7.590

$7.590

$7.590

-

Element14

Singapore . 1,015 parts In-Stock

1+ parts

$9.326

100+ parts

-

1k+ parts

-

10k+ parts

-

1,015

$9.326

-

-

-

Farnell

UK . 562 parts In-Stock

1+ parts

$9.410

100+ parts

$7.930

1k+ parts

$7.550

10k+ parts

-

562

$9.410

$7.930

$7.550

-

DigiKey

USA . 37 parts In-Stock

1+ parts

$12.150

100+ parts

$10.400

1k+ parts

$10.058

10k+ parts

-

37

$12.150

$10.400

$10.058

-

Arrow

USA . 5,040 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$8.251

5,040

-

-

-

$8.251

Verical

USA . 5,040 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$8.251

5,040

-

-

-

$8.251

Future Electronics

Canada . 2,520 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$6.790

10k+ parts

-

2,520

-

-

$6.790

-

Edge Electronics

USA . 620 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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620

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,406 parts In-Stock

1+ parts

$7.210

100+ parts

-

1k+ parts

-

10k+ parts

-

1,406

$7.210

-

-

-

Nova Conductors

Japan . 23 parts In-Stock

1+ parts

$8.840

100+ parts

-

1k+ parts

-

10k+ parts

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23

$8.840

-

-

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Cyclops Electronics Ltd

UK . 6,816 parts In-Stock

1+ parts

-

100+ parts

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6,816

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-

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Vyrian

USA . 2,108 parts In-Stock

1+ parts

-

100+ parts

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2,108

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-

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ACDS - Activité Composants Distribution Service

France . 1,260 parts In-Stock

1+ parts

-

100+ parts

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1,260

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 334 parts In-Stock

1+ parts

$3.166

100+ parts

-

1k+ parts

-

10k+ parts

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334

$3.166

-

-

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Aztec Data Supply Inc.

USA . 63 parts In-Stock

1+ parts

$5.340

100+ parts

-

1k+ parts

-

10k+ parts

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63

$5.340

-

-

-

Semicontronic

India . 2,407 parts In-Stock

1+ parts

$6.450

100+ parts

$6.289

1k+ parts

$6.256

10k+ parts

-

2,407

$6.450

$6.289

$6.256

-

Continental Prestige Electronics

USA . 1,035 parts In-Stock

1+ parts

$6.780

100+ parts

$6.440

1k+ parts

-

10k+ parts

-

1,035

$6.780

$6.440

-

-

Corphita

USA . 519 parts In-Stock

1+ parts

$6.831

100+ parts

-

1k+ parts

-

10k+ parts

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519

$6.831

-

-

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Netroflash

USA . 500 parts In-Stock

1+ parts

$8.840

100+ parts

-

1k+ parts

-

10k+ parts

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500

$8.840

-

-

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Ampacity Inc.

Singapore . 2,055 parts In-Stock

1+ parts

$14.040

100+ parts

-

1k+ parts

-

10k+ parts

-

2,055

$14.040

-

-

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CoreStaff

Japan . 1,260 parts In-Stock

1+ parts

$17.426

100+ parts

$11.513

1k+ parts

$11.498

10k+ parts

-

1,260

$17.426

$11.513

$11.498

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iodParts Technologies Inc.

India . 3,267 parts In-Stock

1+ parts

-

100+ parts

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3,267

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-

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Argo Parts USA

USA . 3,149 parts In-Stock

1+ parts

-

100+ parts

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3,149

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Speed Components Ltd (Excess)

Israel . 1,116 parts In-Stock

1+ parts

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1,116

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A-Z Elektronik GmbH

Germany . 280 parts In-Stock

1+ parts

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280

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Perfect Parts

USA . 11 parts In-Stock

1+ parts

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11

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Overview

Upgrade your device's performance with the MT40A1G8SA-062E:R by Micron Technology. As a leading manufacturer in the industry, Micron Technology guarantees top-notch quality and reliability. This DRAM module offers seamless synchronous operation, self-refresh capabilities, and common input/output type, making it ideal for a wide range of applications. With a nominal supply voltage of 1.2V and a compact package style, this product provides exceptional value and efficiency to customers. Experience faster speeds and improved functionality with the MT40A1G8SA-062E:R from Micron Technology.

Feature Benefit Bullets

Operating Mode: SYNCHRONOUS

Synchronous operation allows for data to be transferred at a fixed, predetermined rate, ensuring reliable performance and data integrity.

Nominal Supply Voltage / Vsup (V): 1.2

The low nominal supply voltage of 1.2V helps in reducing power consumption and heat generation, making the product energy efficient.

Organization: 1GX8

The organization of 1GX8 means it has a capacity of 1 gigabit with each word consisting of 8 bits, providing ample memory storage and data processing capabilities.

Technology: CMOS

CMOS technology offers high performance, low power consumption, and compatibility with a wide range of systems, making it a versatile and reliable choice.

Memory IC Type: DDR4 DRAM

Being DDR4 DRAM, this product offers high-speed data transfer rates, improved bandwidth, and increased efficiency compared to previous generations, enhancing overall system performance.

Technical Specifications

DRAM MT40A1G8SA-062E:R attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

Input/Output Type:

COMMON

Interleaved Burst Length:

8

JESD-30 Code:

R-PBGA-B78

Length:

11 mm

Memory Density:

8589934592 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

78

No. of Words:

1073741824 words

No. of Words Code:

1G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA78,6X13,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Refresh Cycles:

Reverse Pinout:

NO

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.26 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

7.5 mm

Trade Compliance

MT40A1G8SA-062E:R Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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