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MT40A256M16LY-062EAAT:F

Micron Technology

MT40A256M16LY-062EAAT:F by Micron Technology

Micron Technology's MT40A256M16LY-062EAAT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and reliability in harsh environments.

Median Price

$26.099

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Edge Electronics

USA . 2,000 parts In-Stock

1+ parts

-

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2,000

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$26.099

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$26.099

-

-

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Vyrian

USA . 6,780 parts In-Stock

1+ parts

-

100+ parts

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6,780

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Digiode

USA . 705 parts In-Stock

1+ parts

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705

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ComSIT USA

USA . 600 parts In-Stock

1+ parts

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600

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ComSIT Distribution GmbH

Germany . 480 parts In-Stock

1+ parts

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480

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Bristol Electronics

USA . 4 parts In-Stock

1+ parts

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4

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 69 parts In-Stock

1+ parts

$5.178

100+ parts

-

1k+ parts

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10k+ parts

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69

$5.178

-

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Semicontronic

India . 1,843 parts In-Stock

1+ parts

$8.000

100+ parts

$7.800

1k+ parts

$7.760

10k+ parts

-

1,843

$8.000

$7.800

$7.760

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AZTECH Wire

Italy . 65 parts In-Stock

1+ parts

$13.720

100+ parts

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65

$13.720

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Continental Prestige Electronics

USA . 4,609 parts In-Stock

1+ parts

$20.279

100+ parts

-

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10k+ parts

$19.874

4,609

$20.279

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-

$19.874

Ampacity Inc.

Singapore . 1,653 parts In-Stock

1+ parts

$23.000

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1,653

$23.000

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$25.577

100+ parts

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1k+ parts

$24.554

10k+ parts

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100

$25.577

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$24.554

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GreenTree Electronics

Israel . 10,706 parts In-Stock

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10,706

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Argo Parts USA

USA . 3,616 parts In-Stock

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3,616

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A-Z Elektronik GmbH

Germany . 3,071 parts In-Stock

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3,071

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Corphita

USA . 1,273 parts In-Stock

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1,273

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Overview

Upgrade your devices with the MT40A256M16LY-062EAAT:F by Micron Technology, a top-tier manufacturer known for quality and reliability. This DDR4 DRAM module offers exceptional performance, low power consumption, and industrial-grade temperature resilience. Ideal for various applications, this memory chip provides seamless multi-bank page burst access, making it perfect for enhancing the efficiency and speed of your electronics. Trust Micron Technology to deliver cutting-edge technology that exceeds expectations. Elevate your devices with the MT40A256M16LY-062EAAT:F today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring long-lasting performance.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and effort during assembly.

Operating Mode: SYNCHRONOUS

Enhances data transfer speeds and efficiency, making the product suitable for high-performance applications.

Nominal Supply Voltage / Vsup (V): 1.2

Offers efficient power usage while maintaining stable performance levels.

Memory IC Type: DDR4 DRAM

Utilizes the latest DDR4 technology for improved data processing and multitasking capabilities.

Technical Specifications

DRAM MT40A256M16LY-062EAAT:F attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

MULTI BANK PAGE BURST

Input/Output Type:

COMMON

Interleaved Burst Length:

8

JESD-30 Code:

R-PBGA-B96

Length:

13.5 mm

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

96

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX16

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA96,9X16,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

8

Maximum Standby Current:

.048 Amp

Minimum Standby Voltage:

1.14 V

Maximum Supply Current:

58 mA

Maximum Supply Voltage (Vsup):

1.26 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.5 mm

Trade Compliance

MT40A256M16LY-062EAAT:F Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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