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MT48LC4M32B2P-6AAIT:L

Micron Technology

MT48LC4M32B2P-6AAIT:L by Micron Technology

Micron Technology's MT48LC4M32B2P-6AAIT:L is a 3.3V, 4MX32 Synchronous DRAM with self-refresh capability. Operating in industrial temperature range (-40 to 85 °C), it offers fast access time of 5.4 ns and features four bank page burst access mode, making it ideal for high-performance computing applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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ComSIT Distribution GmbH

Germany . 20,658 parts In-Stock

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ComSIT USA

USA . 20,658 parts In-Stock

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20,658

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Chip Stock

USA . 14,000 parts In-Stock

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14,000

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Vyrian

USA . 5,812 parts In-Stock

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Digiode

USA . 2,029 parts In-Stock

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Nova Conductors

Japan . 650 parts In-Stock

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650

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Ampacity Inc.

Singapore . 1,430 parts In-Stock

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$3.000

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$3.000

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Corohmni

South Africa . 797 parts In-Stock

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$4.977

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797

$4.977

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AZTECH Wire

Italy . 889 parts In-Stock

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$7.530

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889

$7.530

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Semicontronic

India . 309 parts In-Stock

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$23.000

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$22.425

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$22.310

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309

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$22.310

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Kepictronics

USA . 8,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,200 parts In-Stock

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Continental Prestige Electronics

USA . 5,786 parts In-Stock

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Argo Parts USA

USA . 4,956 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Corphita

USA . 1,760 parts In-Stock

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Microchip USA

USA . 142 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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Perfect Parts

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Overview

Unlock unparalleled performance and reliability with the MT48LC4M32B2P-6AAIT:L by Micron Technology. As a leading manufacturer in the DRAM category, Micron delivers cutting-edge technology that exceeds industry standards. This versatile memory module is ideal for a wide range of applications, from industrial to automotive, offering seamless operation and high-speed data processing. Experience the unmatched value and benefits this product provides, ensuring optimal performance and efficiency in your projects. Choose Micron for top-notch quality and innovation in memory solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, ideal for portable or industrial applications.

Surface Mount: YES

Being surface mountable, this product is easy to integrate onto circuit boards, saving space and simplifying assembly.

Screening Level: AEC-Q100

With AEC-Q100 screening level, this product meets automotive industry standards for reliability and quality, suitable for automotive applications.

Operating Mode: SYNCHRONOUS

The synchronous operating mode allows for precise timing and coordination, making it suitable for high-performance applications that require synchronous data transfer.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V provides efficient power consumption and compatibility with a wide range of systems.

No. of Terminals: 86

Having 86 terminals allows for reliable connectivity and optimal signal transmission within the system.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline and thin profile package style saves space on the PCB, making it ideal for compact designs or applications with limited space.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this product can withstand higher temperature environments, increasing its reliability and durability.

Minimum Operating Temperature: -40 °C

The ability to operate at temperatures as low as -40°C makes this product suitable for use in harsh environmental conditions or industrial applications.

Terminal Position: DUAL

The dual terminal position provides redundancy and ensures stable electrical connections, enhancing the overall reliability of the product.

Memory IC Type: SYNCHRONOUS DRAM

Being a synchronous DRAM, the memory IC offers high-speed data transfer and efficient performance, making it suitable for demanding memory-intensive applications.

Technical Specifications

DRAM MT48LC4M32B2P-6AAIT:L attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PDSO-G86

Length:

22.22 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

86

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

MT48LC4M32B2P-6AAIT:L Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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