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MT8KTF51264HZ-1G9P1

Micron Technology

MT8KTF51264HZ-1G9P1 by Micron Technology

MT8KTF51264HZ-1G9P1 by Micron Technology is a DDR3L DRAM MODULE with 512MX64 organization. It operates in synchronous mode, has a self-refresh feature, and a nominal voltage of 1.35V. It is commonly used in commercial applications requiring high memory density and single bank page burst access mode.

Median Price

$77.688

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 820 parts In-Stock

1+ parts

$68.610

100+ parts

$56.500

1k+ parts

-

10k+ parts

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820

$68.610

$56.500

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Verical

USA . 37 parts In-Stock

1+ parts

$72.180

100+ parts

$53.460

1k+ parts

$51.660

10k+ parts

-

37

$72.180

$53.460

$51.660

-

Farnell

UK . 3 parts In-Stock

1+ parts

$76.821

100+ parts

$65.006

1k+ parts

-

10k+ parts

-

3

$76.821

$65.006

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-

Element14

Singapore . 3 parts In-Stock

1+ parts

$77.688

100+ parts

$64.140

1k+ parts

-

10k+ parts

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3

$77.688

$64.140

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Arrow

USA . 36 parts In-Stock

1+ parts

$82.730

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-

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36

$82.730

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Newark

USA . 200 parts In-Stock

1+ parts

$201.120

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-

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200

$201.120

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DigiKey

USA . 183 parts In-Stock

1+ parts

-

100+ parts

$78.851

1k+ parts

-

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183

-

$78.851

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-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,342 parts In-Stock

1+ parts

$68.571

100+ parts

-

1k+ parts

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10k+ parts

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1,342

$68.571

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$81.770

100+ parts

-

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10

$81.770

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Chip Stock

USA . 11,200 parts In-Stock

1+ parts

-

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11,200

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Vyrian

USA . 3,183 parts In-Stock

1+ parts

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3,183

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ComSIT Distribution GmbH

Germany . 438 parts In-Stock

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438

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NAC Semi

USA . 197 parts In-Stock

1+ parts

-

100+ parts

$75.470

1k+ parts

$69.660

10k+ parts

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197

-

$75.470

$69.660

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Semtec, LLC

USA . 10 parts In-Stock

1+ parts

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10

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ACDS - Activité Composants Distribution Service

France . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 382 parts In-Stock

1+ parts

$64.962

100+ parts

-

1k+ parts

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382

$64.962

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Continental Prestige Electronics

USA . 4,157 parts In-Stock

1+ parts

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4,157

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Argo Parts USA

USA . 1,951 parts In-Stock

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1,951

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Authorized Procurement Solutions

USA . 800 parts In-Stock

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800

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Perfect Parts

USA . 772 parts In-Stock

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772

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Netroflash

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$80.135

1k+ parts

$77.681

10k+ parts

$76.046

500

-

$80.135

$77.681

$76.046

GreenTree Electronics

Israel . 197 parts In-Stock

1+ parts

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197

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Overview

Experience the next level of performance with the MT8KTF51264HZ-1G9P1 by Micron Technology. As a leader in the industry, Micron Technology is renowned for its exceptional quality and innovation. The MT8KTF51264HZ-1G9P1, belonging to the DRAM category, offers countless benefits for various applications. With its synchronous operating mode and self-refresh capability, this product ensures smooth and efficient performance. Its compact design and wide temperature range make it suitable for any environment. Trust Micron Technology to provide you with an unrivaled product that delivers value, reliability, and superior performance - every time.

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient and space-saving installation in various devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures faster data transfer and better performance compared to asynchronous operation.

Self Refresh: YES

Self-refresh capability helps in preserving data during power outages or low power situations, increasing reliability.

Nominal Supply Voltage / Vsup (V): 1.35

Low nominal supply voltage helps in reducing power consumption and heat generation, making it energy efficient.

No. of Terminals: 204

Higher number of terminals provide more connectivity options and enhance signal transmission capabilities.

Maximum Operating Temperature: 70 °C

High maximum operating temperature tolerance ensures reliable performance even under extreme conditions.

Organization: 512MX64

This organization configuration allows for efficient data storage and retrieval, enhancing overall system performance.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature ensures reliable operation even in colder environments.

Temperature Grade: COMMERCIAL

Being commercial-grade indicates reliability and compatibility with a wide range of consumer electronic devices.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and faster operation, improving overall efficiency.

No. of Words: 536870912 words

High word capacity allows for storing large amounts of data, making it suitable for memory-intensive applications.

Memory Width: 64

64-bit memory width enables faster data transfer and processing, leading to improved system performance.

Maximum Supply Voltage (Vsup): 1.45 V

Reasonable maximum supply voltage ensures safe operation and prevents damage to the module.

Memory IC Type: DDR3L DRAM MODULE

DDR3L technology offers high data transfer rates, lower power consumption, and improved compatibility with a wide range of devices.

Technical Specifications

DRAM MT8KTF51264HZ-1G9P1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

SINGLE BANK PAGE BURST

Additional Features:

SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX

JESD-30 Code:

R-XZMA-N204

Length:

67.6 mm

Memory Density:

34359738368 bit

Memory IC Type:

Memory Width:

64

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

204

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512MX64

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Peak Reflow Temperature (C):

260

Maximum Seated Height:

30.15 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.45 V

Minimum Supply Voltage (Vsup):

1.283 V

Nominal Supply Voltage / Vsup (V):

1.35

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.45 mm

Terminal Position:

ZIG-ZAG

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.8 mm

Trade Compliance

MT8KTF51264HZ-1G9P1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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