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MT48LC4M32B2B5-6AAAT:L

Micron Technology

MT48LC4M32B2B5-6AAAT:L by Micron Technology

Micron Technology's MT48LC4M32B2B5-6AAAT:L is a 4MX32 Synchronous DRAM with 32-bit memory width. Operating at 3.3V, it offers a max access time of 5.4ns and self-refresh capability. Ideal for industrial applications requiring high-speed memory performance in a compact GRID ARRAY package style.

Median Price

$12.868

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,283 parts In-Stock

1+ parts

$10.836

100+ parts

$9.011

1k+ parts

$8.755

10k+ parts

$8.755

1,283

$10.836

$9.011

$8.755

$8.755

Verical

USA . 1,283 parts In-Stock

1+ parts

$10.836

100+ parts

$9.011

1k+ parts

$8.755

10k+ parts

$8.755

1,283

$10.836

$9.011

$8.755

$8.755

DigiKey

USA . 97 parts In-Stock

1+ parts

$14.900

100+ parts

$12.752

1k+ parts

$12.022

10k+ parts

-

97

$14.900

$12.752

$12.022

-

Mouser Electronics

USA . 485 parts In-Stock

1+ parts

$17.500

100+ parts

-

1k+ parts

-

10k+ parts

-

485

$17.500

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 848 parts In-Stock

1+ parts

$10.294

100+ parts

-

1k+ parts

-

10k+ parts

-

848

$10.294

-

-

-

Nova Conductors

Japan . 650 parts In-Stock

1+ parts

$15.330

100+ parts

-

1k+ parts

-

10k+ parts

-

650

$15.330

-

-

-

Chip Stock

USA . 4,979 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,979

-

-

-

-

Vyrian

USA . 894 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

894

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 764 parts In-Stock

1+ parts

$4.852

100+ parts

-

1k+ parts

-

10k+ parts

-

764

$4.852

-

-

-

Andel Nordic

Denmark . 5,296 parts In-Stock

1+ parts

$8.938

100+ parts

-

1k+ parts

$8.580

10k+ parts

$8.580

5,296

$8.938

-

$8.580

$8.580

Semicontronic

India . 926 parts In-Stock

1+ parts

$9.210

100+ parts

$8.980

1k+ parts

$8.934

10k+ parts

-

926

$9.210

$8.980

$8.934

-

Ampacity Inc.

Singapore . 863 parts In-Stock

1+ parts

$9.210

100+ parts

-

1k+ parts

-

10k+ parts

-

863

$9.210

-

-

-

Corphita

USA . 828 parts In-Stock

1+ parts

$9.752

100+ parts

-

1k+ parts

-

10k+ parts

-

828

$9.752

-

-

-

Continental Prestige Electronics

USA . 6,237 parts In-Stock

1+ parts

$15.330

100+ parts

-

1k+ parts

-

10k+ parts

$15.023

6,237

$15.330

-

-

$15.023

A-Z Elektronik GmbH

Germany . 5,259 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,259

-

-

-

-

Argo Parts USA

USA . 4,839 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,839

-

-

-

-

Authorized Procurement Solutions

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,000

-

-

-

-

Perfect Parts

USA . 1,613 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,613

-

-

-

-

RC Electronics

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Kepictronics

USA . 163 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

163

-

-

-

-

Netroflash

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$15.023

1k+ parts

$14.563

10k+ parts

$14.257

100

-

$15.023

$14.563

$14.257

Overview

Unleash the power of cutting-edge technology with Micron Technology's MT48LC4M32B2B5-6AAAT:L DRAM. Designed to deliver unparalleled performance and reliability, this product is perfect for a wide range of applications. With its advanced features and high-quality construction, customers can experience seamless operation and enhanced efficiency. Trust in Micron Technology's expertise and elevate your projects to new heights with the MT48LC4M32B2B5-6AAAT:L.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material offers durability and reliability for the product.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly onto circuit boards.

Screening Level: AEC-Q100

AEC-Q100 screening level ensures high quality and reliability for automotive applications.

Operating Mode: SYNCHRONOUS

Synchronous operation enhances speed and efficiency of data transmission.

Nominal Supply Voltage (Vsup) 3.3V

Stable supply voltage of 3.3V ensures consistent performance and power efficiency.

No. of Terminals: 90

High number of terminals allow for reliable connections and data transfer.

Maximum Operating Temperature: 105 °C

High maximum operating temperature ensures reliable performance in various environmental conditions.

Organization: 4MX32

4MX32 organization provides high memory capacity and efficient data storage.

Minimum Supply Voltage (Vsup) 3V

Low minimum supply voltage of 3V ensures flexibility and compatibility with different systems.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation for the product.

Technical Specifications

DRAM MT48LC4M32B2B5-6AAAT:L attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PBGA-B90

Length:

13 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

90

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

MT48LC4M32B2B5-6AAAT:L Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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