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IS42S16160G-7TLI-TR

Integrated Silicon Solution

IS42S16160G-7TLI-TR by Integrated Silicon Solution

IS42S16160G-7TLI-TR by Integrated Silicon Solution is a 16MX16 SYNCHRONOUS DRAM with 3.3V supply, operating at up to 143 MHz clock frequency. Ideal for industrial applications requiring high-speed memory access and common I/O type in a small outline package.

Median Price

$5.595

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 7,500 parts In-Stock

1+ parts

$5.290

100+ parts

$4.970

1k+ parts

$4.500

10k+ parts

$4.500

7,500

$5.290

$4.970

$4.500

$4.500

Mouser Electronics

USA . 5,137 parts In-Stock

1+ parts

$5.900

100+ parts

$5.090

1k+ parts

-

10k+ parts

-

5,137

$5.900

$5.090

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-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 700 parts In-Stock

1+ parts

$6.760

100+ parts

-

1k+ parts

-

10k+ parts

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700

$6.760

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-

-

Chip Stock

USA . 16,511 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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16,511

-

-

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Vyrian

USA . 6,750 parts In-Stock

1+ parts

-

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6,750

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Component Sense

UK . 137 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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137

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 520 parts In-Stock

1+ parts

$3.602

100+ parts

-

1k+ parts

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10k+ parts

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520

$3.602

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Aztec Data Supply Inc.

USA . 190 parts In-Stock

1+ parts

$4.618

100+ parts

-

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10k+ parts

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190

$4.618

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Continental Prestige Electronics

USA . 2,162 parts In-Stock

1+ parts

$5.040

100+ parts

-

1k+ parts

-

10k+ parts

$4.939

2,162

$5.040

-

-

$4.939

Component Stockers USA

USA . 2,221 parts In-Stock

1+ parts

$6.510

100+ parts

$6.000

1k+ parts

$6.000

10k+ parts

-

2,221

$6.510

$6.000

$6.000

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$6.760

100+ parts

-

1k+ parts

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10k+ parts

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1,000

$6.760

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Microchip USA

USA . 467 parts In-Stock

1+ parts

$17.030

100+ parts

$16.780

1k+ parts

$16.660

10k+ parts

$16.540

467

$17.030

$16.780

$16.660

$16.540

Argo Parts USA

USA . 2,121 parts In-Stock

1+ parts

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100+ parts

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2,121

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Overview

Upgrade your electronic devices with the IS42S16160G-7TLI-TR by Integrated Silicon Solution. Known for their top-notch quality and reliability, ISS products are trusted by industry professionals worldwide. This DRAM module offers seamless synchronous operation, self-refresh capabilities, and a compact design perfect for space-constrained applications. With a maximum clock frequency of 143 MHz and a memory density of 268435456 bits, this memory IC is ideal for high-performance systems that require fast and efficient data storage. Elevate your projects with the cutting-edge technology of ISS products.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring the product's longevity.

Operating Mode: SYNCHRONOUS

Allows for efficient communication between the memory device and the processor, enhancing overall system performance.

Nominal Supply Voltage / Vsup (V): 3.3

Optimal voltage level for stable and reliable operation, reducing the risk of damage to the device.

Maximum Clock Frequency (fCLK): 143 MHz

High clock frequency enables fast data transfer speeds, improving overall system responsiveness.

Temperature Grade: INDUSTRIAL

Suitable for use in industrial environments with varying temperature conditions, ensuring reliable performance under extreme temperatures.

Memory Density: 268435456 bit

High memory density allows for storing a large amount of data efficiently, making it suitable for applications requiring extensive data processing.

Technical Specifications

DRAM IS42S16160G-7TLI-TR attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

143 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G54

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP54,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.004 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

130 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

IS42S16160G-7TLI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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