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IS42S16160J-6BLI

Integrated Silicon Solution

IS42S16160J-6BLI by Integrated Silicon Solution

IS42S16160J-6BLI by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 268Mbit memory density. It operates at 3.3V, has a max access time of 5.4ns, and supports self-refresh mode. Ideal for industrial applications requiring fast and reliable memory performance in a compact grid array package.

Median Price

$3.287

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 48 parts In-Stock

1+ parts

$3.060

100+ parts

$2.620

1k+ parts

$2.560

10k+ parts

-

48

$3.060

$2.620

$2.560

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Mouser Electronics

USA . 7,729 parts In-Stock

1+ parts

$6.520

100+ parts

$5.610

1k+ parts

-

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7,729

$6.520

$5.610

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Newark

USA . 28 parts In-Stock

1+ parts

$7.020

100+ parts

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28

$7.020

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Element14

Singapore . 48 parts In-Stock

1+ parts

$8.970

100+ parts

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48

$8.970

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Arrow

USA . 10,788 parts In-Stock

1+ parts

-

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$3.287

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10,788

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$3.287

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Verical

USA . 10,788 parts In-Stock

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$3.287

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10,788

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$3.287

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Rochester

USA . 196 parts In-Stock

1+ parts

-

100+ parts

$3.260

1k+ parts

$2.920

10k+ parts

$2.740

196

-

$3.260

$2.920

$2.740

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$4.520

100+ parts

-

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500

$4.520

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Chip Stock

USA . 49,381 parts In-Stock

1+ parts

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49,381

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Vyrian

USA . 10,141 parts In-Stock

1+ parts

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10,141

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NAC Semi

USA . 6,588 parts In-Stock

1+ parts

-

100+ parts

-

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$5.450

10k+ parts

$5.040

6,588

-

-

$5.450

$5.040

Bristol Electronics

USA . 3,325 parts In-Stock

1+ parts

-

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3,325

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Cyclops Electronics Ltd

UK . 508 parts In-Stock

1+ parts

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508

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Elcom Components

USA . 157 parts In-Stock

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157

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LWI Electronics Inc

India . 42 parts In-Stock

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42

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GLYN GmbH & Co. KG

Germany . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$3.826

100+ parts

$3.826

1k+ parts

$3.826

10k+ parts

-

3,000

$3.826

$3.826

$3.826

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Aztec Data Supply Inc.

USA . 881 parts In-Stock

1+ parts

$4.505

100+ parts

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881

$4.505

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Corohmni

South Africa . 172 parts In-Stock

1+ parts

$4.507

100+ parts

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172

$4.507

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Continental Prestige Electronics

USA . 6,118 parts In-Stock

1+ parts

$4.520

100+ parts

-

1k+ parts

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10k+ parts

$4.430

6,118

$4.520

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-

$4.430

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$4.520

100+ parts

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2,000

$4.520

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Eastek

USA . 10,416 parts In-Stock

1+ parts

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100+ parts

$4.780

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10,416

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$4.780

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RC Electronics

USA . 9,055 parts In-Stock

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9,055

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Alle Elektronik GmbH

Germany . 4,375 parts In-Stock

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4,375

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Argo Parts USA

USA . 3,775 parts In-Stock

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3,775

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Perfect Parts

USA . 1,915 parts In-Stock

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1,915

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iodParts Technologies Inc.

India . 557 parts In-Stock

1+ parts

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100+ parts

$3.668

1k+ parts

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557

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$3.668

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Robosynatics

Brazil . 100 parts In-Stock

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100

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Lucentia Tech

USA . 100 parts In-Stock

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100

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Overview

Boost your device's performance with the IS42S16160J-6BLI by Integrated Silicon Solution. As a leading manufacturer in the industry, ISS delivers top-quality DRAM memory solutions that are perfect for a wide range of applications. With advanced features like synchronous operation and self-refresh capability, this product offers exceptional value and reliability. Upgrade your system today and experience faster speeds and improved efficiency with ISS's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the DRAM, ensuring a longer lifespan.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and synchronization, making data transfer more efficient and reliable.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage is commonly used in many electronic devices, making this DRAM compatible with a wide range of systems.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this DRAM is suitable for industrial applications where high temperatures may be encountered.

Memory IC Type: SYNCHRONOUS DRAM

Synchronous DRAM technology offers fast data access times and efficient performance, making this DRAM a reliable choice for memory-intensive tasks.

Technical Specifications

DRAM IS42S16160J-6BLI attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH

JESD-30 Code:

S-PBGA-B54

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

IS42S16160J-6BLI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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