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IS42S32400F-7BLI

Integrated Silicon Solution

IS42S32400F-7BLI by Integrated Silicon Solution

IS42S32400F-7BLI by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 3.3V supply, operating at 143MHz clock frequency. It features a thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast memory access and low standby current consumption.

Median Price

$4.932

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 933 parts In-Stock

1+ parts

$6.110

100+ parts

$4.870

1k+ parts

$4.550

10k+ parts

$4.320

933

$6.110

$4.870

$4.550

$4.320

EBV Elektronik

Germany . 4,560 parts In-Stock

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4,560

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Avnet

USA . 247 parts In-Stock

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$3.753

10k+ parts

$3.568

247

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$3.753

$3.568

Distributors (In-Stock)

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$5.710

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500

$5.710

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LIBRA Elektronik GmbH

Germany . 2,477 parts In-Stock

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Vyrian

USA . 2,015 parts In-Stock

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GLYN GmbH & Co. KG

Germany . 145 parts In-Stock

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145

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Tectiva GmbH

Germany . 12 parts In-Stock

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EMSNET

USA . 10 parts In-Stock

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Distributors (Availability)

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Continental Prestige Electronics

USA . 3,447 parts In-Stock

1+ parts

$5.560

100+ parts

-

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$5.449

3,447

$5.560

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$5.449

Advanced Electronics

New Zealand . 650 parts In-Stock

1+ parts

$5.676

100+ parts

$5.165

1k+ parts

$4.654

10k+ parts

-

650

$5.676

$5.165

$4.654

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$5.710

100+ parts

$5.596

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1,000

$5.710

$5.596

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Lixinc

USA . 17,896 parts In-Stock

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Perfect Parts

USA . 16,666 parts In-Stock

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Authorized Procurement Solutions

USA . 4,800 parts In-Stock

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4,800

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GreenTree Electronics

Israel . 4,800 parts In-Stock

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4,800

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Argo Parts USA

USA . 4,264 parts In-Stock

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4,264

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iodParts Technologies Inc.

India . 2,017 parts In-Stock

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$3.981

1k+ parts

$3.539

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2,017

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$3.981

$3.539

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Overview

Revolutionize your electronic devices with the IS42S32400F-7BLI from Integrated Silicon Solution. As a leading manufacturer in the industry, ISS delivers top-quality DRAM products that guarantee optimal performance and reliability. Whether you're working on high-speed computing applications or data storage systems, this synchronous memory module offers seamless operation and energy efficiency. Upgrade your technology with ISS and experience faster processing speeds and improved overall functionality. Elevate your projects with IS42S32400F-7BLI today!

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - This material is commonly used in DRAM packages for its lightweight and durable properties.

Surface Mount

YES - This feature allows for easy and efficient installation on circuit boards.

Package Shape

RECTANGULAR - This shape is standard for DRAM packages, making it compatible with a wide range of devices.

Operating Mode

SYNCHRONOUS - Synchronous operation ensures reliable and high-speed performance.

Self Refresh

YES - Self-refresh capability helps to conserve power and extend the lifespan of the DRAM.

Nominal Supply Voltage / Vsup (V)

3.3 - A common and optimal voltage for DRAM operation.

Power Supplies (V)

3.3 - The standard power supply voltage for stable performance.

No. of Terminals

90 - Sufficient terminals for connections within the circuit.

Package Style (Meter)

GRID ARRAY, THIN PROFILE, FINE PITCH - This style provides a compact and efficient design for space-constrained applications.

Maximum Operating Temperature

85 °C - Ensures reliable performance even in high-temperature environments.

Organization

4MX32 - This organization configuration is suitable for a wide range of memory-intensive applications.

Output Characteristics

3-STATE - 3-state output enables flexible control over data flow.

Minimum Operating Temperature

40 °C - This wide temperature range ensures the DRAM can withstand extreme environmental conditions.

Terminal Finish

TIN SILVER COPPER - This finish enhances the conductivity and reliability of the terminals.

Terminal Position

BOTTOM - Bottom terminal position allows for easy integration and soldering onto circuit boards.

Maximum Seated Height

1.2 mm - Low seated height is ideal for slim and compact devices.

Maximum Clock Frequency (fCLK)

143 MHz - High clock frequency enables fast data transfer rates.

Width

8 mm - Compact width for space-efficient placement on circuit boards.

Minimum Supply Voltage (Vsup)

3 V - This minimum supply voltage ensures the DRAM operates within safe voltage limits.

Maximum Time At Peak Reflow Temperature (s)

30 - Adequate time for reflow soldering processes.

Peak Reflow Temperature °C

260 - High peak reflow temperature for reliable solder joints.

Length

13 mm - Length suitable for various form factors and PCB layouts.

Temperature Grade

INDUSTRIAL - Industrial-grade temperature tolerance for rugged applications.

Access Mode

FOUR BANK PAGE BURST - Efficient access mode for quick data retrieval.

Technology

CMOS - CMOS technology offers low power consumption and high-speed performance.

Terminal Form

BALL - Ball terminal form for easy soldering and connection.

Maximum Supply Current

160 mA - Maximum current draw for stable operation.

No. of Words

4194304 words - Large memory capacity for storing a vast amount of data.

Sequential Burst Length

1,2,4,8,FP - Various burst lengths for flexible data transfer options.

Memory Width

32 - Standard memory width for compatibility with many systems.

Terminal Pitch

0.8 mm - Compact terminal pitch for space-efficient design.

No. of Words Code

4M - A code representing the memory capacity of the DRAM.

Maximum Supply Voltage (Vsup)

3.6 V - The maximum supply voltage to prevent damage to the DRAM.

Memory Density

134217728 bit - High memory density for storing large amounts of data.

Memory IC Type

SYNCHRONOUS DRAM - Synchronous DRAM type for high-speed and reliable performance.

Maximum Standby Current

0.002 Amp - Low standby current for power efficiency.

Refresh Cycles

4096 - Sufficient refresh cycles to maintain memory integrity.

Interleaved Burst Length

1,2,4,8 - Interleaved burst length for efficient data access.

Maximum Access Time

5.4 ns - Fast access time for quick data retrieval.

Technical Specifications

DRAM IS42S32400F-7BLI attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

143 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PBGA-B90

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

90

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX32

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA90,9X15,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.002 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

160 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

8 mm

Trade Compliance

IS42S32400F-7BLI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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