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MT16JSF25664HY-1G4D1

Micron Technology

MT16JSF25664HY-1G4D1 by Micron Technology

Micron Technology's MT16JSF25664HY-1G4D1 is a 256MX64 DDR DRAM MODULE with 17179869184-bit memory density. Operating at 1.5V, it features synchronous mode and self-refresh capability. Ideal for commercial applications, this rectangular package offers dual bank page burst access mode and CMOS technology.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 12,100 parts In-Stock

1+ parts

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12,100

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Vyrian

USA . 5,284 parts In-Stock

1+ parts

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5,284

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Digiode

USA . 665 parts In-Stock

1+ parts

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665

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 599 parts In-Stock

1+ parts

$16.000

100+ parts

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599

$16.000

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AZTECH Wire

Italy . 368 parts In-Stock

1+ parts

$17.250

100+ parts

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368

$17.250

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Argo Parts USA

USA . 4,061 parts In-Stock

1+ parts

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4,061

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Continental Prestige Electronics

USA . 1,626 parts In-Stock

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1,626

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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Corphita

USA . 657 parts In-Stock

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657

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Overview

Upgrade your system's performance with the MT16JSF25664HY-1G4D1 by Micron Technology. This DDR DRAM MODULE offers unparalleled quality and reliability, thanks to Micron's industry-leading manufacturing standards. Ideal for a wide range of applications, this SYNCHRONOUS DRAM module provides seamless operation and improved data processing speeds. Elevate your computing experience with the value and benefits of Micron's cutting-edge technology, delivering superior performance and efficiency to meet all your memory needs.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement and handling in electronic devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transferred at a consistent and controlled rate, improving overall performance.

Self Refresh: YES

Self refresh capability helps in conserving power consumption by automatically refreshing memory without external intervention.

Nominal Supply Voltage: 1.5V

Low nominal supply voltage of 1.5V reduces power consumption and heat dissipation, enhancing energy efficiency.

No. of Terminals: 204

Having 204 terminals allows for a secure and stable connection with the electronic device, ensuring reliable data transfer.

Maximum Operating Temperature: 70°C

High maximum operating temperature tolerance of 70°C ensures stability and performance in various environmental conditions.

Organization: 256MX64

Organized as 256MX64, this DRAM module provides a large memory capacity and efficient data management for advanced computing tasks.

Memory IC Type: DDR DRAM MODULE

This DDR DRAM module offers high-speed data transfer rates and is compatible with a wide range of devices, making it a versatile choice.

Technical Specifications

DRAM MT16JSF25664HY-1G4D1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

DUAL BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-XZMA-N204

JESD-609 Code:

e4

Memory Density:

17179869184 bit

Memory IC Type:

Memory Width:

64

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

204

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256MX64

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.575 V

Minimum Supply Voltage (Vsup):

1.425 V

Nominal Supply Voltage / Vsup (V):

1.5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Gold (Au)

Terminal Form:

NO LEAD

Terminal Position:

ZIG-ZAG

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MT16JSF25664HY-1G4D1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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