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MT16HTF25664HZ-800M1

Micron Technology

MT16HTF25664HZ-800M1 by Micron Technology

Micron Technology's MT16HTF25664HZ-800M1 is a 256MX64 DDR DRAM MODULE with 17179869184 bit memory density. Operating at 1.8V, it features synchronous mode and self-refresh capability. Ideal for commercial applications, this rectangular microelectronic assembly has a dual bank page burst access mode.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,254 parts In-Stock

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Digiode

USA . 2,387 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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Chip Stock

USA . 230 parts In-Stock

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AZTECH Wire

Italy . 264 parts In-Stock

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$18.230

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264

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Ampacity Inc.

Singapore . 548 parts In-Stock

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$30.000

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Microchip USA

USA . 1,825 parts In-Stock

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$38.304

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Alle Elektronik GmbH

Germany . 4,968 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,447 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Argo Parts USA

USA . 1,844 parts In-Stock

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Epart123

USA . 1,200 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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Continental Prestige Electronics

USA . 397 parts In-Stock

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Corphita

USA . 69 parts In-Stock

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Overview

Enhance your system's performance with the MT16HTF25664HZ-800M1 by Micron Technology. This high-quality DDR DRAM MODULE offers seamless operation in a variety of applications, thanks to its synchronous operating mode and self-refresh capabilities. With Micron Technology's reputation for reliability and innovation, you can trust that this memory module will exceed your expectations. Say goodbye to lag and hello to smooth, efficient performance with the MT16HTF25664HZ-800M1.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape allows for easy installation and integration into various electronic devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures that data is transmitted and processed efficiently, enhancing overall performance.

Self Refresh: YES

Self-refresh capability helps in conserving power and maintaining data integrity during standby or low-power modes.

Nominal Supply Voltage / Vsup (V): 1.8

Optimal supply voltage of 1.8V ensures reliable and stable operation of the DRAM module.

No. of Terminals: 200

A higher number of terminals allow for more efficient communication and connectivity within the device.

Maximum Operating Temperature: 70 °C

With a high operating temperature tolerance of 70°C, the DRAM module can be used in various environments without overheating.

Organization: 256MX64

The organization of 256MX64 indicates a high capacity and density, offering ample storage for data-intensive applications.

Minimum Operating Temperature: 0 °C

Ability to operate at 0°C ensures functionality even in lower temperature environments.

Terminal Position: ZIG-ZAG

Zig-zag terminal position enables secure connection and reduces the risk of disconnection or misalignment.

Maximum Seated Height: 30.15 mm

Compact size with a maximum seated height of 30.15mm allows for space-efficient design and installation.

Width: 3.8 mm

Narrow width of 3.8mm enables easy integration into compact electronic devices.

Minimum Supply Voltage (Vsup): 1.7 V

Low minimum supply voltage of 1.7V helps in reducing power consumption and enhancing energy efficiency.

Length: 67.6 mm

The length of 67.6mm provides a balanced form factor for easy placement and compatibility with various devices.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures compatibility with standard operating conditions in commercial settings.

Access Mode: DUAL BANK PAGE BURST

Dual bank page burst access mode allows for efficient data retrieval and access, enhancing overall performance.

Technology: CMOS

CMOS technology offers high speed and low power consumption, making the DRAM module efficient and reliable.

Terminal Form: NO LEAD

No lead terminal form provides a more environmentally friendly and durable option for connections.

No. of Words: 268435456 words

High number of words signifies a large storage capacity, suitable for data-intensive applications and multitasking.

Memory Width: 64

Memory width of 64 provides ample data bandwidth for fast and efficient data transfer.

No. of Words Code: 256M

Code indicating 256M words signifies a high memory capacity for storing large amounts of data.

Maximum Supply Voltage (Vsup): 1.9 V

Maximum supply voltage of 1.9V allows for safe operating conditions without risking damage to the module.

Memory Density: 17179869184 bit

High memory density of 17179869184 bit provides ample storage space for various applications and processes.

Memory IC Type: DDR DRAM MODULE

DDR DRAM module offers high-speed data transfer rates and improved performance compared to traditional memory modules.

Technical Specifications

DRAM MT16HTF25664HZ-800M1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

DUAL BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH; WD-MAX

JESD-30 Code:

R-XZMA-N200

Length:

67.6 mm

Memory Density:

17179869184 bit

Memory IC Type:

Memory Width:

64

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

200

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256MX64

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Maximum Seated Height:

30.15 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.9 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

ZIG-ZAG

Width:

3.8 mm

Trade Compliance

MT16HTF25664HZ-800M1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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