Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Micron Technology's MT16HTF25664HZ-800M1 is a 256MX64 DDR DRAM MODULE with 17179869184 bit memory density. Operating at 1.8V, it features synchronous mode and self-refresh capability. Ideal for commercial applications, this rectangular microelectronic assembly has a dual bank page burst access mode.
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Rectangular shape allows for easy installation and integration into various electronic devices.
Synchronous operation ensures that data is transmitted and processed efficiently, enhancing overall performance.
Self-refresh capability helps in conserving power and maintaining data integrity during standby or low-power modes.
Optimal supply voltage of 1.8V ensures reliable and stable operation of the DRAM module.
A higher number of terminals allow for more efficient communication and connectivity within the device.
With a high operating temperature tolerance of 70°C, the DRAM module can be used in various environments without overheating.
The organization of 256MX64 indicates a high capacity and density, offering ample storage for data-intensive applications.
Ability to operate at 0°C ensures functionality even in lower temperature environments.
Zig-zag terminal position enables secure connection and reduces the risk of disconnection or misalignment.
Compact size with a maximum seated height of 30.15mm allows for space-efficient design and installation.
Narrow width of 3.8mm enables easy integration into compact electronic devices.
Low minimum supply voltage of 1.7V helps in reducing power consumption and enhancing energy efficiency.
The length of 67.6mm provides a balanced form factor for easy placement and compatibility with various devices.
Commercial temperature grade ensures compatibility with standard operating conditions in commercial settings.
Dual bank page burst access mode allows for efficient data retrieval and access, enhancing overall performance.
CMOS technology offers high speed and low power consumption, making the DRAM module efficient and reliable.
No lead terminal form provides a more environmentally friendly and durable option for connections.
High number of words signifies a large storage capacity, suitable for data-intensive applications and multitasking.
Memory width of 64 provides ample data bandwidth for fast and efficient data transfer.
Code indicating 256M words signifies a high memory capacity for storing large amounts of data.
Maximum supply voltage of 1.9V allows for safe operating conditions without risking damage to the module.
High memory density of 17179869184 bit provides ample storage space for various applications and processes.
DDR DRAM module offers high-speed data transfer rates and improved performance compared to traditional memory modules.
DRAM MT16HTF25664HZ-800M1 attributes and parameters. Explore more DRAM devices from Micron Technology
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MT16HTF25664HZ-800M1 Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.36
SB
8542.32.00.23
PCN Packaging - 2D barcode 15/Jul/2016 Standard Pkg Label Chg 20/Feb/2019
Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.
President, CEO
Sanjay Mehrotra
Executive VP, CFO
Mark J. Murphy
Executive VP, CBO
Sumit Sadana
Fab 4
Fabrication
Fab Initiation
1994
USA
Boise
Wafer Capacity
8,750
Fab 6
1997
Manassas
23,000
2006
28,000
Fab 11
2007
Taiwan
Taoyuan
34,000
Fab 16 A1
Taichung
50,000
Fab 16 A3
2021
3,000
Fab 15
2002
Japan
Hiroshima
98,000
2004
New Hiroshima DRAM Fab
2017
11,750
Fab 10W
2016
Singapore
20,000
Fab 10X
55,000
2019
18,000
Fab 10A
Fab 10N
2014
47,000
2000
32,000
2012
6,000
Fab 16 A2
2015
43,000
New Clay Fab Phase 1
2027
Clay
New Boise Fab 1
2025
Fab 16 A5
2028
Expansion Fab
2020
1N4148
Shanghai Lunsure Electronic Technology
RECTIFIER DIODE; Surface Mount: NO; Maximum Forward Voltage (VF): 1 V; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Config: SINGLE;
2N2222A
Transistor & Electronic
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Texas Instruments
1N4148 by Texas Instruments is a rectifier diode with max reverse recovery time of 0.004 us and max forward voltage of 1V. Ideal for applications requiring low reverse current such as signal demodulation circuits. Operates at max temp of 200°C, making it suitable for high-temperature environments.
CRG0805F10K
TE Connectivity
TE Connectivity's CRG0805F10K is a 10000 ohm fixed resistor with 1% tolerance. It operates b/w -55 to 155 °C and has a power dissipation of 0.125 W. Ideal for surface mount applications in various electronic circuits due to its compact size and high temperature rating.
SMBJ18CA
Changzhou Starsea Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Unisonic Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;
General Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
RC0402FR-0710KL
Yageo
Yageo's RC0402FR-0710KL is a 10000 ohm SMT fixed resistor with 1% tolerance, suitable for applications requiring a rated power dissipation of 0.0625 W. With a temperature coefficient of 100 ppm/°C, it operates b/w -55 to 155 °C, making it ideal for various electronic circuits.
BAV99
Micro Commercial Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
M24308/2-1F
Souriau
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Body or Shell Style: RECEPTACLE; MIL Conformity: YES;
IRLML6401TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; Avalanche Energy Rating (EAS): 33 mJ;
LM555CM
Onsemi
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
SS14
Rugao Dachang Electronic
RECTIFIER DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 40 V; Maximum Forward Voltage (VF): .55 V; No. of Elements: 1; Technology: SCHOTTKY;
LM358M
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
LM358MX
ROHM
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR;
DS18B20Z+T&R
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Minimum Operating Temperature: -55 Cel; Package Body Material: PLASTIC/EPOXY;
CL10B104KB8NNNC
Samsung Electro-mechanics
CL10B104KB8NNNC by Samsung Electro-mechanics is a ceramic capacitor with capacitance of 0.1uF and rated DC voltage of 50V. It has a negative tolerance of 10% and temperature coefficient of 15ppm/°C, suitable for surface mount applications in various electronic devices. With dimensions of 1.6mm x 0.8mm x 0.9mm, it operates b/w -55 to 125 °C providing stable performance in compact designs.
GRM155R71H103KA88D
Murata Manufacturing
The Murata Manufacturing GRM155R71H103KA88D is a ceramic capacitor with 0.01uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring compact size and high reliability.
MT41K512M16HA-125:A
Micron Technology
Micron Technology's MT41K512M16HA-125:A is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in a compact grid array package.
M471B2873FHS-CH9
Samsung
Samsung's M471B2873FHS-CH9 DDR DRAM MODULE offers 128MX64 organization, 1.5V nominal voltage, and operates in synchronous mode. Ideal for applications requiring high memory density and fast access times with a temperature range of 0-95°C.
IS43LD32640B-18BLI-TR
Integrated Silicon Solution
IS43LD32640B-18BLI-TR by Integrated Silicon Solution is a 64MX32 LPDDR2 DRAM with 67108864 words and 2147483648 bit memory density. Operating at 1.2V, it features synchronous mode, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high-speed memory performance in a compact grid array package.
MT48LC4M16A2P-75:GTR
Micron Technology's MT48LC4M16A2P-75:GTR is a 3.3V Synchronous DRAM with 4MX16 organization, operating at 70°C max temp. It features self-refresh mode, small outline package, and dual terminal position. Ideal for commercial applications requiring fast access time and high memory density.
K4T1G164QQ-HCE6
Samsung's K4T1G164QQ-HCE6 DDR2 DRAM features 64MX16 organization, 333 MHz clock frequency, and 67108864 words capacity. Ideal for applications requiring high-speed memory access and data processing with a max standby current of 0.015 Amp.
W631GU6NB-12
Winbond Electronics
W631GU6NB-12 by Winbond Electronics is a DDR3L DRAM with 64MX16 organization, operating at up to 800 MHz. It features a low supply voltage of 1.35V and offers a memory density of 1073741824 bits. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
NT6DM32M16BD-T1I
Nanya Technology
NT6DM32M16BD-T1I by Nanya Technology is a DDR1 DRAM with 32MX16 organization, 536870912 bit memory density, and operates at 1.8V. Suitable for industrial applications, it features synchronous operation, self-refresh capability, and a very thin profile grid array package style.
IS42S16400J-7BLI
IS42S16400J-7BLI by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply voltage, 143 MHz clock frequency, and 85°C max temp. Ideal for industrial applications requiring fast memory access, it features self-refresh mode, common I/O type, and thin profile grid array package.
MT40A1G8WE-083EAAT:B
Micron Technology's MT40A1G8WE-083EAAT:B is a DDR4 DRAM with 1GX8 organization, operating at up to 1200 MHz. It features a thin profile grid array package suitable for automotive applications due to AEC-Q100 screening and common I/O type. With self-refresh capability and wide temperature range (-40°C to 105°C), it offers reliable performance in demanding environments.
MT8HTF12864HDZ-800M1
Micron Technology's MT8HTF12864HDZ-800M1 is a 128MX64 DDR DRAM MODULE with 8589934592 bit memory density. It operates synchronously at 1.8V, featuring dual bank page burst access mode. Ideal for commercial applications, this rectangular microelectronic assembly has a max temperature of 70°C.
W957A8MFYA5I
EDO DRAM;
AS4C16M16SA-6BIN
Alliance Memory
Alliance Memory's AS4C16M16SA-6BIN is a 16MX16 Synchronous DRAM with 166 MHz clock frequency, suitable for industrial applications. Featuring self-refresh and common I/O type, it operates at 3.3V with a memory density of 268MB. Ideal for systems requiring fast access times and high memory capacity.
IS42S16400J-6TL-TR
IS42S16400J-6TL-TR by Integrated Silicon Solution is a 3.3V DRAM with 4MX16 organization, 166 MHz clock frequency, and 67108864-bit memory density. Ideal for commercial applications requiring fast access times and low standby current consumption.
MT41K256M16HA-125IT:ETR
Micron Technology's MT41K256M16HA-125IT:ETR is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for applications requiring high memory density and fast data processing in compact devices.
MT40A1G8WE-083EAIT:B
Micron Technology's MT40A1G8WE-083EAIT:B is a DDR4 DRAM with 1GX8 organization, operating at up to 1200 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics or industrial control systems.
NT5CC64M16GP-DIT
NT5CC64M16GP-DIT by Nanya Technology is a DDR3L DRAM with 64MX16 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices such as smartphones, tablets, and networking equipment.
MT40A2G8JC-062E:E
Micron Technology's MT40A2G8JC-062E:E is a DDR4 DRAM with 2GX8 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access such as servers, workstations, and high-performance computing systems.
MT41J64M16JT-15EAAT:G
Micron Technology's MT41J64M16JT-15EAAT:G is a DDR3 DRAM with 64MX16 organization, operating at 667 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in automotive electronics and industrial control systems.
MT48LC4M32B2P-7:G
Micron Technology's MT48LC4M32B2P-7:G is a 3.3V Synchronous DRAM with 4MX32 organization, suitable for commercial applications. It features a max clock frequency of 143 MHz, operates at temperatures b/w 0 to 70 °C, and has a memory density of 134217728 bits.
MT48LC4M32B2P-6A:LTR
Micron Technology's MT48LC4M32B2P-6A:LTR is a 3.3V Synchronous DRAM with 4MX32 organization, operating at 0-70°C. Featuring self-refresh and four-bank page burst access mode, it offers a memory density of 134217728 bits for commercial applications requiring fast access times of up to 5.4 ns.
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MT16KTF2G64HZ-1G6A1
DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; Organization: 2GX64;
MT16JSF25664HY-1G4D1
DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.425 V;
MT16HTF25664HIZ-667H1
DDR DRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT16HTF25664HIZ-667M1
DDR DRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;
MT16HTF51264AY-667A1
DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT16D232G-6L
FAST PAGE DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 72; Package Code: SIMM; Refresh Cycles: 1024; Package Shape: RECTANGULAR;
MT16D164G8S
FAST PAGE DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Package Code: DIMM; Refresh Cycles: 1024; Package Shape: RECTANGULAR;
MT16D232G-6X
EDO DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 72; Package Code: SIMM; Refresh Cycles: 1024; Package Shape: RECTANGULAR;
MT16D232G-6XS
EDO DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 72; Refresh Cycles: 1024; Package Shape: RECTANGULAR; Technology: CMOS;
MT16D164G-6L
FAST PAGE DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Refresh Cycles: 1024; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 5;
MT16D164G-7L
FAST PAGE DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Refresh Cycles: 1024; Package Shape: RECTANGULAR; Surface Mount: NO;
MT16D164M-6L
FAST PAGE DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Refresh Cycles: 1024; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 4.5 V;
MT16D232G-6
MT16D164G-8L
FAST PAGE DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Refresh Cycles: 1024; Package Shape: RECTANGULAR; Access Mode: FAST PAGE;
MT16D232G-6S
MT16D164G-7
MT16D164M-7
MT16D164G-7S
MT16D164M-7L
FAST PAGE DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Refresh Cycles: 1024; Package Shape: RECTANGULAR; Organization: 1MX64;
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