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MT48LC4M16A2P-75:GTR

Micron Technology

MT48LC4M16A2P-75:GTR by Micron Technology

Micron Technology's MT48LC4M16A2P-75:GTR is a 3.3V Synchronous DRAM with 4MX16 organization, operating at 70°C max temp. It features self-refresh mode, small outline package, and dual terminal position. Ideal for commercial applications requiring fast access time and high memory density.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,829 parts In-Stock

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7,829

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Chip Stock

USA . 5,654 parts In-Stock

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Digiode

USA . 2,350 parts In-Stock

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2,350

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Infinite Electronics LLP

India . 1,162 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Bristol Electronics

USA . 2 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,087 parts In-Stock

1+ parts

$7.000

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1,087

$7.000

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Andel Nordic

Denmark . 521 parts In-Stock

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$10.525

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$10.104

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$10.104

521

$10.525

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$10.104

$10.104

AZTECH Wire

Italy . 126 parts In-Stock

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$11.930

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126

$11.930

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QUARKTWIN TECHNOLOGY LTD

USA . 28,759 parts In-Stock

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28,759

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Microchip USA

USA . 4,472 parts In-Stock

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Continental Prestige Electronics

USA . 3,290 parts In-Stock

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3,290

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Corphita

USA . 239 parts In-Stock

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239

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Aranea Global

USA . 100 parts In-Stock

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100

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Argo Parts USA

USA . 90 parts In-Stock

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90

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Overview

Experience the unparalleled quality and reliability of Micron Technology with the MT48LC4M16A2P-75:GTR DRAM module. Designed for synchronous operation, this memory chip offers seamless performance and self-refresh capabilities, making it ideal for a wide range of applications. With a compact design and efficient power consumption, this product delivers exceptional value to customers looking for high-performance memory solutions. Trust in Micron's expertise and innovation to enhance your technology experience with the MT48LC4M16A2P-75:GTR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for use in various electronic devices.

Surface Mount: YES

The surface mount capability allows for easy installation on PCBs, making it convenient for manufacturers during production.

Operating Mode: SYNCHRONOUS

The synchronous operation ensures precise data transfer and synchronization, improving overall performance and reliability.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage provides a good balance between power efficiency and performance for the DRAM.

No. of Terminals: 54

Having 54 terminals allows for efficient connectivity and communication with other components in the system.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this DRAM can perform reliably even in demanding environmental conditions.

Organization: 4MX16

The 4MX16 organization indicates high memory capacity and efficient data storage capabilities.

Memory Density: 67108864 bit

The high memory density of 67108864 bits ensures ample storage space for data-heavy applications.

Maximum Access Time: 5.4 ns

The fast maximum access time of 5.4 nanoseconds enables quick retrieval of data, enhancing overall system performance.

Technical Specifications

DRAM MT48LC4M16A2P-75:GTR attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PDSO-G54

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

MT48LC4M16A2P-75:GTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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