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MT48LC4M32B2P-6A:L

Micron Technology

MT48LC4M32B2P-6A:L by Micron Technology

Micron Technology's MT48LC4M32B2P-6A:L is a 4MX32 DRAM with 3.3V supply, operating in synchronous mode with self-refresh capability. It features a memory density of 134217728 bits and offers fast access time of 5.4 ns. Ideal for commercial applications requiring high-speed data processing in compact devices.

Median Price

$12.000

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 4,000 parts In-Stock

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$12.000

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$12.000

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Cyclops Electronics Ltd

UK . 13,013 parts In-Stock

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Chip Stock

USA . 4,232 parts In-Stock

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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Semi Source

USA . 2,581 parts In-Stock

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Digiode

USA . 2,182 parts In-Stock

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Vyrian

USA . 1,903 parts In-Stock

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Classic Components Corporation

USA . 191 parts In-Stock

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Netsource Technology, Inc.

USA . 170 parts In-Stock

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Speed Components Ltd

Israel . 92 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 86 parts In-Stock

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Nova Conductors

Japan . 73 parts In-Stock

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ComSIT Distribution GmbH

Germany . 39 parts In-Stock

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ComSIT USA

USA . 39 parts In-Stock

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Distributors (Availability)

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$3.410

100+ parts

$3.103

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$2.796

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$3.410

$3.103

$2.796

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Aztec Data Supply Inc.

USA . 280 parts In-Stock

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$4.070

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$4.070

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Corohmni

South Africa . 2,428 parts In-Stock

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$4.330

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Ampacity Inc.

Singapore . 3,574 parts In-Stock

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$6.030

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Semicontronic

India . 3,535 parts In-Stock

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$6.030

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$5.879

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$5.849

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$6.030

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$5.849

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Perfect Parts

USA . 32,333 parts In-Stock

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A-Z Elektronik GmbH

Germany . 9,517 parts In-Stock

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Argo Parts USA

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Corphita

USA . 1,682 parts In-Stock

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Futuretech Components

Singapore . 1,543 parts In-Stock

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RC Electronics

USA . 1,073 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 871 parts In-Stock

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Continental Prestige Electronics

USA . 646 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 249 parts In-Stock

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Kepictronics

USA . 205 parts In-Stock

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Microchip USA

USA . 168 parts In-Stock

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iodParts Technologies Inc.

India . 26 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Experience peak performance with the MT48LC4M32B2P-6A:L by Micron Technology, a leading manufacturer in the DRAM category. This high-quality memory module offers unparalleled value with its compact design and advanced technology. Ideal for a wide range of applications, this product ensures seamless operation and maximum efficiency. Elevate your system with Micron Technology's cutting-edge DRAM solution and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the DRAM, ensuring a longer lifespan.

Surface Mount: YES

Ensures easy installation and compatibility with modern circuit boards.

Operating Mode: SYNCHRONOUS

Offers fast and efficient data transfer, enhancing overall performance.

Nominal Supply Voltage / Vsup (V): 3.3

Efficient power consumption for improved energy efficiency.

No. of Words: 4194304 words

Provides ample storage capacity for storing large amounts of data.

Memory Width: 32

Allows for fast and efficient data processing.

Technology: CMOS

Offers low power consumption and high noise immunity, making it a reliable choice.

Maximum Access Time: 5.4 ns

Ensures quick access to stored data, improving system responsiveness.

Technical Specifications

DRAM MT48LC4M32B2P-6A:L attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PDSO-G86

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

86

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

MT48LC4M32B2P-6A:L Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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