Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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MT48LC16M16A2P-6A:G by Micron Technology is a 16MX16 SDRAM with 3.3V supply, 167MHz clock frequency, and 70°C operating temp. Ideal for commercial applications requiring high-speed memory access in a small outline package.
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Perfect Parts
Durable and lightweight material for efficient handling and transportation.
Easy installation on PCBs without the need for through-holes, saving space and improving reliability.
Allows for precise timing and synchronization with other system components for optimal performance.
Standard voltage for compatibility with a wide range of systems and power sources.
High clock frequency for fast data transfer and processing speeds.
High memory density for storing large amounts of data efficiently.
DRAM MT48LC16M16A2P-6A:G attributes and parameters. Explore more DRAM devices from Micron Technology
Access Mode:
Maximum Access Time:
Additional Features:
Maximum Clock Frequency (fCLK):
Input/Output Type:
Interleaved Burst Length:
JESD-30 Code:
JESD-609 Code:
Length:
Memory Density:
Memory IC Type:
Memory Width:
No. of Functions:
No. of Ports:
No. of Terminals:
No. of Words:
No. of Words Code:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Organization:
Output Characteristics:
Package Body Material:
Package Code:
Package Equivalence Code:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Power Supplies (V):
Qualification:
Refresh Cycles:
Maximum Seated Height:
Self Refresh:
Sequential Burst Length:
Maximum Standby Current:
Sub-Category:
Maximum Supply Current:
Maximum Supply Voltage (Vsup):
Minimum Supply Voltage (Vsup):
Nominal Supply Voltage / Vsup (V):
Surface Mount:
Technology:
Temperature Grade:
Terminal Finish:
Terminal Form:
Terminal Pitch:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Width:
MT48LC16M16A2P-6A:G Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.24
SB
8542.32.00.15
PCN Design/Specification - Memory 24-May-2022
PCN Assembly/Origin - BOM Revision 21/Aug/2020
PCN Packaging - Tray 05-May-2022
Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.
President, CEO
Sanjay Mehrotra
Executive VP, CFO
Mark J. Murphy
Executive VP, CBO
Sumit Sadana
Fab 4
Fabrication
Fab Initiation
1994
USA
Boise
Wafer Capacity
8,750
Fab 6
1997
Manassas
23,000
2006
28,000
Fab 11
2007
Taiwan
Taoyuan
34,000
Fab 16 A1
Taichung
50,000
Fab 16 A3
2021
3,000
Fab 15
2002
Japan
Hiroshima
98,000
2004
New Hiroshima DRAM Fab
2017
11,750
Fab 10W
2016
Singapore
20,000
Fab 10X
55,000
2019
18,000
Fab 10A
Fab 10N
2014
47,000
2000
32,000
2012
6,000
Fab 16 A2
2015
43,000
New Clay Fab Phase 1
2027
Clay
New Boise Fab 1
2025
Fab 16 A5
2028
Expansion Fab
2020
MBR0520LT3G
Onsemi
MBR0520LT3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, ideal for applications requiring high-speed switching and low power loss in compact electronic devices. The package style is small outline, making it suitable for surface mount designs in various electronics.
1N4148
Crimson Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
DS18B20Z+
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Body Width: 3.9 inch; Maximum Supply Voltage: 5.5 V;
2N7002
Silicon Standard
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;
Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .115 A; Operating Mode: ENHANCEMENT MODE;
Yangzhou Yangjie Electronics
M24308/2-1F
Bel Fuse
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Mixed Contacts: NO;
SS14
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Non Repetitive Peak Forward Current: 40 A; Technology: SCHOTTKY; No. of Elements: 1;
LM317TG
Texas Instruments
LM317TG by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max output current of 1.5A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. The package style is flange mount, with a rectangular shape and through-hole terminals for easy installation.
BAV99
Motorola
RECTIFIER DIODE; Surface Mount: YES; Maximum Output Current: .1 A; Maximum Reverse Recovery Time: .006 us; Maximum Repetitive Peak Reverse Voltage: 70 V; JESD-609 Code: e0;
FDV304P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .46 A;
BSS138
General Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 50 V; Qualification: Not Qualified;
EU2B-YS2J03C
Idec
ROTARY SWITCH;
SS14+
Multicomp Pro
SS14+ by Multicomp Pro is a Schottky rectifier diode with a max output current of 1A and a reverse test voltage of 40V. It is designed for surface mount applications in electronic circuits, offering a small outline package style and dual terminal position. With a temperature range from -65°C to 150°C, it is suitable for various industrial and consumer electronics.
M85049/85-08W02
Glenair
CONNECTOR ACCESSORY; MIL Conformity: YES; Material: ALUMINIUM ALLOY; Associated Backshell Military - Specifications: MIL-DTL-38999; Shell Sizes: 08; DIN Conformity: NO;
Lite-on Technology
RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 175 Cel; Maximum Output Current: .1 A; Maximum Reverse Recovery Time: .006 us;
LM7805CT
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
Sinyork
RECTIFIER DIODE; Surface Mount: NO; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Output Current: .15 A; Maximum Repetitive Peak Reverse Voltage: 100 V; No. of Phases: 1;
Eic Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
MBRS340T3G
MBRS340T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 4A. It operates b/w -65°C to 150°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package. The diode's matte tin terminal finish and dual position make it ideal for surface mount PCB designs.
NT5CC256M16EP-EK
Nanya Technology
NT5CC256M16EP-EK by Nanya Technology is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and low power consumption in a compact grid array package style.
MT46H32M16LFBF-6IT:C
Micron Technology
Micron Technology's MT46H32M16LFBF-6IT:C is a 32MX16 DDR1 DRAM with 536870912 bit memory density. It operates at 166 MHz clock frequency, suitable for industrial applications requiring fast access time of 5 ns. The package style is grid array with very thin profile and fine pitch, making it ideal for space-constrained designs.
IS42S32400F-6BL-TR
Integrated Silicon Solution
IS42S32400F-6BL-TR by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 3.3V supply, 166 MHz clock frequency, and 5.4 ns access time. Ideal for commercial applications requiring high memory density and fast data processing in a compact grid array package.
IS42S16160J-7BL
IS42S16160J-7BL by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 268Mbit memory density. It operates at 3.3V, has a peak reflow temp of 260°C, and offers fast access time of 5.4ns. Ideal for commercial applications requiring high-speed memory in compact form factors.
KM48C8000AS-6
Samsung
Samsung's KM48C8000AS-6 is an 8MX8 DRAM with 8388608 words, operating at 5V. It features a fast page access mode with EDO technology and has a memory density of 67108864 bits. Ideal for applications requiring high-speed data storage and retrieval in commercial temperature environments.
KVR16S11/8
Kingston Technology Company
Kingston KVR16S11/8 is a DDR3 DRAM module with 1Gx64 organization, operating at 800MHz. It has a memory density of 68719476736 bits and operates at a voltage range of 1.425V to 1.575V. Ideal for applications requiring synchronous operation and common I/O type in microelectronic assemblies.
MT48LC2M32B2P-7IT:G
Micron Technology's MT48LC2M32B2P-7IT:G is a 2MX32 Synchronous DRAM with 67108864 bit memory density. It operates at 143 MHz clock frequency, suitable for industrial applications requiring fast data access and common I/O type. With a compact size of 22.22mm x 10.16mm, it offers high performance with low standby current consumption.
NT5CC64M16GP-DIH
NT5CC64M16GP-DIH by Nanya Technology is a DDR3L DRAM with 64MX16 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
NT5CC256M16ER-EKA
NT5CC256M16ER-EKA by Nanya Technology is a DDR DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, multi-bank page burst access mode, and industrial temperature grade. Suitable for applications requiring high memory density and fast data processing in compact devices.
EDB4432BBBJ-1D-F-D
Micron Technology's EDB4432BBBJ-1D-F-D is a 128MX32 LPDDR2 DRAM with 134 terminals in a very thin profile grid array package. Operating at 1.2V, it offers synchronous access mode and self-refresh capability for low power consumption. Ideal for applications requiring high memory density and fast data processing in compact devices.
MT41K256M16TW-093:P
MT41K256M16TW-093:P by Micron Technology is a DDR3L DRAM with 256MX16 organization and 4294967296 bit memory density. It operates at a nominal voltage of 1.35V and has a max operating temperature of 95°C. This memory module is commonly used in applications requiring high-speed synchronous operation, such as servers and data centers.
KM416C256AJ-7
Samsung's KM416C256AJ-7 is a 256Kx16 DRAM with 70ns access time and operates at 5V. It features a small outline package, 3-state output, and fast page access mode. Ideal for commercial applications requiring high-speed memory with 512 refresh cycles and common I/O type.
AS4C512M16D3LC-12BCN
Alliance Memory
Alliance Memory's AS4C512M16D3LC-12BCN is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact devices like smartphones and tablets.
IS43DR16640B-25DBLI
IS43DR16640B-25DBLI by Integrated Silicon Solution is a 64MX16 DDR2 DRAM with a max clock frequency of 400 MHz. It operates in synchronous mode and has a memory density of 1073741824 bit. This DRAM is commonly used in industrial applications that require high-speed data storage and retrieval.
MT47H128M16RT-25E:C
MT47H128M16RT-25E:C by Micron Technology is a 128MX16 DDR2 DRAM with 400 MHz clock frequency, 1.8V supply voltage, and 85°C operating temperature. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
KM44C256BP-7
Samsung's KM44C256BP-7 is a 256Kx4 DRAM with 262144 words and memory density of 1048576 bits. Operating at 5V, it has a max access time of 70ns and refresh cycles of 512. Ideal for applications requiring fast page access in commercial temperature grades.
KMM366S403CTL-G0
Samsung's KMM366S403CTL-G0 is a 4MX64 Synchronous DRAM module with 3.3V supply, operating at 100MHz clock frequency. It features self-refresh capability and offers a memory density of 268MB for applications requiring high-speed data processing in commercial temperature environments.
K4S281632I-UC60
Samsung's K4S281632I-UC60 is a 3.3V DRAM with 8MX16 organization, 166 MHz clock frequency, and 70°C operating temperature. Ideal for applications requiring high-speed memory access in commercial-grade devices.
MT8HTF12864HDZ-800M1
Micron Technology's MT8HTF12864HDZ-800M1 is a 128MX64 DDR DRAM MODULE with 8589934592 bit memory density. It operates synchronously at 1.8V, featuring dual bank page burst access mode. Ideal for commercial applications, this rectangular microelectronic assembly has a max temperature of 70°C.
MSM5416273-50GS-K
Lapis Semiconductor
MSM5416273-50GS-K by Lapis Semiconductor is a 256Kx16 DRAM with synchronous operation at 5V. It features fast page access mode, 50ns max access time, and video DRAM memory IC type. Ideal for applications requiring high-speed data storage in commercial temperature environments.
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MT48LC16M16A2P-6AIT:GTR
Micron Technology's MT48LC16M16A2P-6AIT:GTR is a 16MX16 DRAM with 16777216 words and 268435456 bit memory density. It operates at 3.3V, has a peak reflow temperature of 260°C, and supports industrial temperature grade applications. With synchronous operation and four bank page burst access mode, it is ideal for high-performance computing systems.
MT48LC16M16A2P-6AIT:G
Micron Technology's MT48LC16M16A2P-6AIT:G is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, 3.3V supply voltage, and -40 to 85°C operating temperature range. Ideal for industrial applications requiring high-speed memory access with a compact form factor and low power consumption.
MT48LC16M16A2P-6A:GTR
Micron Technology's MT48LC16M16A2P-6A:GTR is a 16MX16 Synchronous DRAM with 16777216 words, 268435456 bit memory density, and 5.4 ns max access time. It operates at 3.3V, has a temperature range of 0-70°C, and is suitable for commercial applications requiring high-speed memory performance.
MT48LC4M32B2P-6AIT:LTR
Micron Technology's MT48LC4M32B2P-6AIT:LTR is a 4MX32 Synchronous DRAM with 3.3V supply voltage, operating at -40 to 85 °C. It features self-refresh mode, industrial temperature grade, and offers 5.4 ns max access time. Ideal for applications requiring high-speed memory performance in harsh environments.
MT48LC16M16A2P-6AXIT:G
Micron Technology's MT48LC16M16A2P-6AXIT:G is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, operating at 3.3V. It features a small outline, thin profile package and offers 8192 refresh cycles. Ideal for industrial applications requiring high-speed memory with common I/O type and self-refresh capability.
MT48LC4M16A2P-6AIT:J
Micron Technology's MT48LC4M16A2P-6AIT:J is a 4MX16 DRAM with 3.3V supply, operating at 167MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring fast access times and high memory density.
MT48LC16M16A2B4-6AIT:G
MT48LC16M16A2B4-6AIT:G by Micron Technology is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, 5.4 ns access time, and 8192 refresh cycles. It is ideal for industrial applications requiring high-speed memory operations in a compact grid array package with very thin profile and fine pitch design.
MT48LC16M16A2P-6AXIT:GTR
Micron Technology's MT48LC16M16A2P-6AXIT:GTR is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, 5.4 ns access time, and 8192 refresh cycles. Ideal for industrial applications requiring high-speed memory operations in a compact form factor.
MT48LC4M32B2P-6AIT:L
Micron Technology's MT48LC4M32B2P-6AIT:L is a 4MX32 DRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring fast access time, high memory density, and low power consumption.
MT48LC16M16A2P-6AAIT:G
Micron Technology's MT48LC16M16A2P-6AAIT:G is a 16MX16 DRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring fast access times and high memory density in a compact small outline package.
MT48LC16M16A2P-6AIT
MT48LC16M16A2P-6AIT by Micron Technology is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, 5.4 ns access time, and 8192 refresh cycles. It is ideal for industrial applications requiring high-speed memory operations in a compact package with common I/O type and self-refresh capability.
MT48LC4M32B2P-6AXIT:L
Micron Technology's MT48LC4M32B2P-6AXIT:L is a 3.3V, 4MX32 Synchronous DRAM with 5.4ns access time and 134217728-bit memory density. Ideal for industrial applications, it features self-refresh mode, operates synchronously, and supports four-bank page burst access mode.
MT48LC8M16A2P-6A:L
Micron Technology's MT48LC8M16A2P-6A:L is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 167 MHz clock frequency. It features common I/O type, self-refresh mode, and supports four-bank page burst access. Ideal for commercial applications requiring high-speed memory with low power consumption.
MT48LC4M16A2P-6AIT:JTR
Micron Technology's MT48LC4M16A2P-6AIT:JTR is a 3.3V Synchronous DRAM with 4MX16 organization, operating at up to 167MHz clock frequency. Ideal for industrial applications, it offers a memory density of 67108864 bits and supports common I/O type with self-refresh capability.
MT48LC8M16A2P-6AIT:L
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;
MT48LC2M32B2P-6AIT:JTR
Micron Technology's MT48LC2M32B2P-6AIT:JTR is a 3.3V, 2MX32 Synchronous DRAM with 5.4ns access time. Ideal for industrial applications, it features self-refresh mode and operates at temperatures ranging from -40 to 85°C. The memory density is 67108864 bits with a memory width of 32 bits.
MT48LC4M16A2P-6A:J
Micron Technology's MT48LC4M16A2P-6A:J is a 4MX16 Synchronous DRAM with 3.3V supply, operating at 167MHz. It features a small outline package and offers common I/O type for applications requiring fast access times and high memory density.
MT48LC16M16A2P-75IT:DTR
Micron Technology's MT48LC16M16A2P-75IT:DTR is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 133MHz. It features 16777216 words, FOUR BANK PAGE BURST access mode, and supports sequential burst lengths of 1,2,4,8. Ideal for industrial applications requiring high-speed memory performance in a compact form factor.
MT48LC8M16A2P-6AIT:LTR
Micron Technology's MT48LC8M16A2P-6AIT:LTR is a 3.3V, 8MX16 CMOS Synchronous DRAM with 8388608 words and 134217728 bit memory density. It operates in industrial temperature range (-40 to 85 °C) with self-refresh capability. Ideal for applications requiring fast access time (5.4 ns) and four bank page burst access mode.
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
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12,000 In-Stock
Total price ≈ $80,197.29
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