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MT48LC16M16A2P-6A:G

Micron Technology

MT48LC16M16A2P-6A:G by Micron Technology

MT48LC16M16A2P-6A:G by Micron Technology is a 16MX16 SDRAM with 3.3V supply, 167MHz clock frequency, and 70°C operating temp. Ideal for commercial applications requiring high-speed memory access in a small outline package.

Median Price

$9.580

Lifecycle Status

Suppliers In-Stock

37

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 1,184 parts In-Stock

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$4.080

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$3.610

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Farnell

UK . 33 parts In-Stock

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$6.800

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Newark

USA . 871 parts In-Stock

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871

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Mouser Electronics

USA . 1,119 parts In-Stock

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Chip1Stop

Japan . 1,798 parts In-Stock

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$146.900

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$92.660

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EBV Elektronik

Germany . 29,160 parts In-Stock

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Verical

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WPG Americas

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Digiode

USA . 1,454 parts In-Stock

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$4.494

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Nova Conductors

Japan . 89 parts In-Stock

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$11.100

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Bristol Electronics

USA . 77 parts In-Stock

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$4.853

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Cyclops Electronics Ltd

UK . 699,010 parts In-Stock

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NAC Semi

USA . 45,360 parts In-Stock

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IBS Electronics

USA . 21,600 parts In-Stock

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$4.620

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Chip Stock

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Martec Srl

Italy . 12,796 parts In-Stock

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HZD GmbH

Germany . 8,000 parts In-Stock

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Vyrian

USA . 5,554 parts In-Stock

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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Kruse Electronics AG

Switzerland . 2,464 parts In-Stock

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Classic Components Corporation

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Component Sense

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ACDS - Activité Composants Distribution Service

France . 428 parts In-Stock

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Connect4Technologies Inc.

Canada . 391 parts In-Stock

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ComSIT Distribution GmbH

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ComSIT USA

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Greenchips

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SIE Connect GmbH - GreenChips

Germany . 103 parts In-Stock

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Micros

Poland . 64 parts In-Stock

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$4.534

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$4.465

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Partservice

France . 64 parts In-Stock

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$4.427

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$4.360

Micros sp.j. W. Kędra i J. Lic

Poland . 64 parts In-Stock

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$4.742

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$4.671

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Atlantic Semiconductor

USA . 62 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 43 parts In-Stock

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Cogito LLC

Ukraine . 39 parts In-Stock

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Inventory MP

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Halfin

Belgium . 5 parts In-Stock

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EMSNET

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Semicontronic

India . 21,132 parts In-Stock

1+ parts

$3.820

100+ parts

$3.724

1k+ parts

$3.705

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21,132

$3.820

$3.724

$3.705

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Argo Parts USA

USA . 1,230 parts In-Stock

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$3.978

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Aztec Data Supply Inc.

USA . 168 parts In-Stock

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$3.980

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Corphita

USA . 2,302 parts In-Stock

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$4.258

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Advanced Electronics

New Zealand . 8,000 parts In-Stock

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$4.539

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$4.312

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$4.312

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$4.539

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$4.312

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Continental Prestige Electronics

USA . 1,989 parts In-Stock

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$5.020

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$3.600

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$5.020

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Corohmni

South Africa . 1,612 parts In-Stock

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$5.663

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CoreStaff

Japan . 1,658 parts In-Stock

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$5.709

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$3.772

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$3.767

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$5.709

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Aranea Global

USA . 2,000 parts In-Stock

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$10.878

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$10.443

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$10.878

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Futuretech Components

Singapore . 20,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 9,671 parts In-Stock

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RC Electronics

USA . 5,169 parts In-Stock

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S.R.D Solutions

India . 4,600 parts In-Stock

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Authorized Procurement Solutions

USA . 4,500 parts In-Stock

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Microchip USA

USA . 1,582 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 921 parts In-Stock

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Glotronic Ltd.

UK . 737 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 276 parts In-Stock

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Kepictronics

USA . 264 parts In-Stock

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GreenTree Electronics

Israel . 159 parts In-Stock

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Computer Components Inc. - USA

USA . 151 parts In-Stock

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Legend Electronics Inc. (Excess)

USA . 74 parts In-Stock

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Perfect Parts

USA . 56 parts In-Stock

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Overview

Experience the unparalleled quality and reliability of Micron Technology with the MT48LC16M16A2P-6A:G DRAM module. This high-performance memory component offers seamless operation in a wide range of applications, from consumer electronics to industrial systems. With a focus on innovation and cutting-edge technology, Micron Technology ensures that every product delivers exceptional value and performance. Upgrade your devices with the MT48LC16M16A2P-6A:G and unleash the full potential of your technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for efficient handling and transportation.

Surface Mount: YES

Easy installation on PCBs without the need for through-holes, saving space and improving reliability.

Operating Mode: SYNCHRONOUS

Allows for precise timing and synchronization with other system components for optimal performance.

Nominal Supply Voltage / Vsup (V): 3.3

Standard voltage for compatibility with a wide range of systems and power sources.

Maximum Clock Frequency (fCLK): 167 MHz

High clock frequency for fast data transfer and processing speeds.

Memory Density: 268435456 bit

High memory density for storing large amounts of data efficiently.

Technical Specifications

DRAM MT48LC16M16A2P-6A:G attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

167 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G54

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

16MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP54,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.0025 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

150 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

MT48LC16M16A2P-6A:G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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