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MT48LC4M16A2P-6AIT:JTR

Micron Technology

MT48LC4M16A2P-6AIT:JTR by Micron Technology

Micron Technology's MT48LC4M16A2P-6AIT:JTR is a 3.3V Synchronous DRAM with 4MX16 organization, operating at up to 167MHz clock frequency. Ideal for industrial applications, it offers a memory density of 67108864 bits and supports common I/O type with self-refresh capability.

Median Price

$5.110

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4,303 parts In-Stock

1+ parts

$5.270

100+ parts

$4.540

1k+ parts

$4.270

10k+ parts

-

4,303

$5.270

$4.540

$4.270

-

Future Electronics

Canada . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$2.950

10,000

-

-

-

$2.950

Arrow

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$5.110

2,000

-

-

-

$5.110

EBV Elektronik

Germany . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Verical

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$5.110

2,000

-

-

-

$5.110

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$4.490

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$4.490

-

-

-

Digiode

USA . 711 parts In-Stock

1+ parts

$5.520

100+ parts

-

1k+ parts

-

10k+ parts

-

711

$5.520

-

-

-

NAC Semi

USA . 454 parts In-Stock

1+ parts

$10.490

100+ parts

-

1k+ parts

-

10k+ parts

-

454

$10.490

-

-

-

Martec Srl

Italy . 21,910 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

21,910

-

-

-

-

IBS Electronics

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$5.600

20,000

-

-

-

$5.600

Vyrian

USA . 9,143 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,143

-

-

-

-

Chip Stock

USA . 6,420 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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6,420

-

-

-

-

Semi Source

USA . 8 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

8

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 524 parts In-Stock

1+ parts

$2.921

100+ parts

-

1k+ parts

-

10k+ parts

-

524

$2.921

-

-

-

Argo Parts USA

USA . 4,858 parts In-Stock

1+ parts

$4.490

100+ parts

-

1k+ parts

-

10k+ parts

-

4,858

$4.490

-

-

-

Continental Prestige Electronics

USA . 121 parts In-Stock

1+ parts

$4.490

100+ parts

-

1k+ parts

-

10k+ parts

$4.400

121

$4.490

-

-

$4.400

Aztec Data Supply Inc.

USA . 312 parts In-Stock

1+ parts

$4.710

100+ parts

-

1k+ parts

-

10k+ parts

-

312

$4.710

-

-

-

Ampacity Inc.

Singapore . 12,520 parts In-Stock

1+ parts

$5.070

100+ parts

-

1k+ parts

-

10k+ parts

-

12,520

$5.070

-

-

-

Corphita

USA . 1,348 parts In-Stock

1+ parts

$5.229

100+ parts

-

1k+ parts

-

10k+ parts

-

1,348

$5.229

-

-

-

Component Stockers USA

USA . 21,702 parts In-Stock

1+ parts

$5.490

100+ parts

$4.380

1k+ parts

$3.920

10k+ parts

$3.780

21,702

$5.490

$4.380

$3.920

$3.780

Andel Nordic

Denmark . 232 parts In-Stock

1+ parts

$9.143

100+ parts

-

1k+ parts

$8.778

10k+ parts

$8.778

232

$9.143

-

$8.778

$8.778

Semicontronic

India . 39,448 parts In-Stock

1+ parts

$11.040

100+ parts

$10.764

1k+ parts

$10.709

10k+ parts

-

39,448

$11.040

$10.764

$10.709

-

GreenTree Electronics

Israel . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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6,000

-

-

-

-

Netroflash

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$4.400

1k+ parts

$4.265

10k+ parts

$4.176

2,000

-

$4.400

$4.265

$4.176

Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Overview

Enhance your device's performance with the MT48LC4M16A2P-6AIT:JTR by Micron Technology, a leading manufacturer in the DRAM category. This high-quality product offers unparalleled reliability and speed for a wide range of applications. Experience seamless multitasking, faster data processing, and improved overall efficiency with this innovative solution. Upgrade now and unlock the full potential of your technology with Micron's cutting-edge memory solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body ensures durability and protection for the internal components of the DRAM.

Surface Mount: YES

Being surface mountable makes the installation and integration of this DRAM into circuit boards easier and more efficient.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and coordination with other components, enhancing overall system performance.

Maximum Clock Frequency: 167 MHz

The high maximum clock frequency of 167 MHz enables fast data processing and transfer speeds, suitable for demanding applications.

Memory Density: 67108864 bit

The high memory density of 67108864 bits allows for storing a large amount of data, ideal for memory-intensive tasks and applications.

Technical Specifications

DRAM MT48LC4M16A2P-6AIT:JTR attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

167 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G54

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP54,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.0025 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

MT48LC4M16A2P-6AIT:JTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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