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MT48LC16M16A2B4-6AAIT:G

Micron Technology

MT48LC16M16A2B4-6AAIT:G by Micron Technology

Micron Technology's MT48LC16M16A2B4-6AAIT:G is a 16MX16 DRAM with 3.3V supply voltage, operating in synchronous mode. It features a grid array package style, very thin profile, and fine pitch terminals. Ideal for industrial applications requiring fast access time and high memory density.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,775 parts In-Stock

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Digiode

USA . 2,116 parts In-Stock

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Nova Conductors

Japan . 97 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 244 parts In-Stock

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$4.859

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Ampacity Inc.

Singapore . 166 parts In-Stock

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$8.000

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$8.000

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AZTECH Wire

Italy . 490 parts In-Stock

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$8.409

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Semicontronic

India . 761 parts In-Stock

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$23.000

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$22.425

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$22.310

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761

$23.000

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$22.310

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Perfect Parts

USA . 5,242 parts In-Stock

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Continental Prestige Electronics

USA . 4,499 parts In-Stock

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Argo Parts USA

USA . 3,583 parts In-Stock

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Corphita

USA . 1,055 parts In-Stock

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Authorized Procurement Solutions

USA . 240 parts In-Stock

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Bastille Electronics

Australia . 200 parts In-Stock

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Microchip USA

USA . 177 parts In-Stock

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Overview

Elevate your technology with Micron Technology's MT48LC16M16A2B4-6AAIT:G DRAM. Boasting exceptional quality and reliability, this cutting-edge memory component is a game-changer in the industry. With a wide range of applications, from industrial to consumer electronics, this synchronous DRAM offers unparalleled performance and efficiency. Say goodbye to slow loading times and hello to seamless multitasking with this innovative solution. Trust Micron Technology to deliver top-notch products that exceed expectations. Experience the difference today with the MT48LC16M16A2B4-6AAIT:G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy materials makes the package lightweight and durable, ideal for electronics applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on circuit boards, saving time and space.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transferred at a synchronized rate, improving overall system performance.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V provides a good balance between power consumption and performance.

No. of Terminals: 54

Having 54 terminals allows for a high level of connectivity and data transfer capabilities within the system.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this DRAM can function reliably in a wide range of environmental conditions.

Memory Density: 268435456 bit

With a high memory density of 268435456 bits, this DRAM offers ample storage capacity for data-intensive applications.

Maximum Access Time: 5.4 ns

The quick maximum access time of 5.4 nanoseconds ensures fast data retrieval and processing speeds.

Technical Specifications

DRAM MT48LC16M16A2B4-6AAIT:G attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

S-PBGA-B54

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

8 mm

Trade Compliance

MT48LC16M16A2B4-6AAIT:G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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