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MT48LC8M16A2P-6AXIT:L

Micron Technology

MT48LC8M16A2P-6AXIT:L by Micron Technology

Micron Technology's MT48LC8M16A2P-6AXIT:L is a 8MX16 Synchronous DRAM with 3.3V supply voltage, operating at 167MHz clock frequency. Ideal for applications requiring fast access time and high memory density, such as automotive electronics or industrial control systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 4,492 parts In-Stock

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Vyrian

USA . 3,531 parts In-Stock

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Kruse Electronics AG

Switzerland . 3,526 parts In-Stock

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Kruse

Germany . 3,526 parts In-Stock

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ARCO, INC.

USA . 3,500 parts In-Stock

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3,500

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Digiode

USA . 1,192 parts In-Stock

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Nova Conductors

Japan . 200 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 134 parts In-Stock

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$5.495

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$5.495

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AZTECH Wire

Italy . 230 parts In-Stock

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$16.077

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$16.077

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Semicontronic

India . 606 parts In-Stock

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$29.000

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$28.275

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$28.130

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$28.130

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Component Stockers USA

USA . 258 parts In-Stock

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$99.990

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Argo Parts USA

USA . 4,020 parts In-Stock

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Continental Prestige Electronics

USA . 1,489 parts In-Stock

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Perfect Parts

USA . 1,210 parts In-Stock

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Corphita

USA . 1,196 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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Microchip USA

USA . 298 parts In-Stock

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Robosynatics

Brazil . 250 parts In-Stock

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Bastille Electronics

Australia . 40 parts In-Stock

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Overview

Experience the power of cutting-edge technology with the MT48LC8M16A2P-6AXIT:L by Micron Technology. As a leading manufacturer in the industry, Micron delivers top-quality DRAM products that are designed for seamless integration and optimal performance. Whether you're looking to boost the speed and efficiency of your computing devices or enhance the capabilities of your electronic systems, this innovative product offers unparalleled value and reliability. Trust Micron Technology to provide you with the tools you need to elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ensuring easy handling and long-lasting performance.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for high-speed data transfer and enhanced system performance, making it a reliable choice for demanding applications.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V ensures compatibility with a wide range of systems and helps in reducing power consumption.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C indicates the product's ability to withstand extreme conditions, providing reliability in harsh environments.

Memory IC Type: SYNCHRONOUS DRAM

A synchronous DRAM design offers improved data transfer rates and efficiency, making it suitable for high-performance computing and multitasking applications.

Technical Specifications

DRAM MT48LC8M16A2P-6AXIT:L attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

167 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G54

Length:

22.22 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP54,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

260

Refresh Cycles:

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.0025 Amp

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

MT48LC8M16A2P-6AXIT:L Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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