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MT46H64M16LFBF-5IT:B

Micron Technology

MT46H64M16LFBF-5IT:B by Micron Technology

Micron Technology's MT46H64M16LFBF-5IT:B is a DDR1 DRAM with 64MX16 organization, operating at 200 MHz. It features a common I/O type, self-refresh mode, and synchronous operation. Ideal for industrial applications requiring fast memory access and low power consumption.

Median Price

$8.156

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,042 parts In-Stock

1+ parts

$7.250

100+ parts

-

1k+ parts

-

10k+ parts

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1,042

$7.250

-

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Mouser Electronics

USA . 1,348 parts In-Stock

1+ parts

$7.530

100+ parts

$6.470

1k+ parts

$6.100

10k+ parts

-

1,348

$7.530

$6.470

$6.100

-

Farnell

UK . 1,044 parts In-Stock

1+ parts

$8.782

100+ parts

$6.203

1k+ parts

$6.076

10k+ parts

-

1,044

$8.782

$6.203

$6.076

-

DigiKey

USA . 1,782 parts In-Stock

1+ parts

$12.460

100+ parts

$10.682

1k+ parts

$10.072

10k+ parts

-

1,782

$12.460

$10.682

$10.072

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EBV Elektronik

Germany . 14,256 parts In-Stock

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Verical

USA . 1,042 parts In-Stock

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1,042

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Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$6.440

100+ parts

-

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100

$6.440

-

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Digiode

USA . 2,182 parts In-Stock

1+ parts

$7.496

100+ parts

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2,182

$7.496

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NAC Semi

USA . 39,204 parts In-Stock

1+ parts

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$5.520

39,204

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$5.520

Chip Stock

USA . 15,600 parts In-Stock

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15,600

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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4,000

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Cyclops Electronics Ltd

UK . 3,000 parts In-Stock

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3,000

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Vyrian

USA . 2,286 parts In-Stock

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2,286

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NexGen Digital

USA . 1,786 parts In-Stock

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1,786

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Sensible Micro Corp

USA . 890 parts In-Stock

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890

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Component Sense

UK . 623 parts In-Stock

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623

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ComSIT Distribution GmbH

Germany . 90 parts In-Stock

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90

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NPI Materials, Inc.

USA . 26 parts In-Stock

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26

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Semi Source

USA . 25 parts In-Stock

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25

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Bristol Electronics

USA . 15 parts In-Stock

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15

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Prism Electronics

USA . 6 parts In-Stock

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6

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A&K Electronics

USA . 5 parts In-Stock

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5

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Rotakorn

Sweden . 5 parts In-Stock

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5

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Sunrise Surplus Inc.

USA . 5 parts In-Stock

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5

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Semtec, LLC

USA . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 7,931 parts In-Stock

1+ parts

$1.882

100+ parts

-

1k+ parts

$1.806

10k+ parts

$1.806

7,931

$1.882

-

$1.806

$1.806

Corohmni

South Africa . 556 parts In-Stock

1+ parts

$5.569

100+ parts

-

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556

$5.569

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Aztec Data Supply Inc.

USA . 153 parts In-Stock

1+ parts

$5.680

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153

$5.680

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Continental Prestige Electronics

USA . 4,008 parts In-Stock

1+ parts

$6.299

100+ parts

-

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10k+ parts

$6.173

4,008

$6.299

-

-

$6.173

Ampacity Inc.

Singapore . 2,855 parts In-Stock

1+ parts

$6.390

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2,855

$6.390

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Netroflash

USA . 100 parts In-Stock

1+ parts

$6.440

100+ parts

$6.311

1k+ parts

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100

$6.440

$6.311

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Corphita

USA . 1,342 parts In-Stock

1+ parts

$7.101

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1,342

$7.101

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Perfect Parts

USA . 44,596 parts In-Stock

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44,596

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A-Z Elektronik GmbH

Germany . 11,135 parts In-Stock

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S.R.D Solutions

India . 6,000 parts In-Stock

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6,000

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Speed Components Ltd (Excess)

Israel . 3,195 parts In-Stock

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3,195

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Futuretech Components

Singapore . 3,000 parts In-Stock

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3,000

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Emar International I/E

Canada . 1,775 parts In-Stock

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1,775

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GreenTree Electronics

Israel . 1,000 parts In-Stock

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1,000

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Argo Parts USA

USA . 344 parts In-Stock

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344

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Kepictronics

USA . 211 parts In-Stock

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211

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Infinite Electronics LLP (Excess)

. 192 parts In-Stock

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192

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Overview

Enhance your electronic devices with the MT46H64M16LFBF-5IT:B from Micron Technology, a leading manufacturer in the industry. This high-quality DRAM offers exceptional performance, reliability, and efficiency for a wide range of applications. With its advanced features and innovative design, this product delivers value, benefits, and advantages that will elevate your customer experience. Upgrade to Micron Technology and experience the difference in quality and performance today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and cost-effective material for packaging, ensuring the product is sturdy and reliable.

Surface Mount: YES

Enables easy installation and saves space on the PCB, making it suitable for compact designs.

Operating Mode: SYNCHRONOUS

Allows for synchronized data transfer, improving efficiency and performance.

Nominal Supply Voltage / Vsup (V): 1.8

Optimal supply voltage for stable operation and power efficiency.

Maximum Operating Temperature: 85 °C

Suitable for industrial environments with high temperature requirements.

Maximum Clock Frequency (fCLK): 200 MHz

High clock frequency for fast data processing and responsiveness.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high performance.

Memory IC Type: DDR1 DRAM

DDR1 DRAM technology offers high data transfer rates and efficiency.

Technical Specifications

DRAM MT46H64M16LFBF-5IT:B attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

200 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

2,4,8,16

JESD-30 Code:

R-PBGA-B60

JESD-609 Code:

e1

Length:

9 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

60

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA60,9X10,32

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1 mm

Self Refresh:

YES

Sequential Burst Length:

2,4,8,16

Maximum Standby Current:

.00001 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

135 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

8 mm

Trade Compliance

MT46H64M16LFBF-5IT:B Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.32

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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