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MT46V32M16P-5BIT:J

Micron Technology

MT46V32M16P-5BIT:J by Micron Technology

Micron Technology's MT46V32M16P-5BIT:J is a DDR1 DRAM with 32MX16 organization, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high-speed memory with a small outline package and thin profile design.

Median Price

$8.865

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,202 parts In-Stock

1+ parts

$5.910

100+ parts

-

1k+ parts

-

10k+ parts

-

1,202

$5.910

-

-

-

Farnell

UK . 1,085 parts In-Stock

1+ parts

$6.030

100+ parts

$4.260

1k+ parts

$4.090

10k+ parts

-

1,085

$6.030

$4.260

$4.090

-

Mouser Electronics

USA . 22 parts In-Stock

1+ parts

$11.700

100+ parts

-

1k+ parts

-

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22

$11.700

-

-

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Element14

Singapore . 1,085 parts In-Stock

1+ parts

$539.390

100+ parts

$429.000

1k+ parts

$394.400

10k+ parts

-

1,085

$539.390

$429.000

$394.400

-

EBV Elektronik

Germany . 35,640 parts In-Stock

1+ parts

-

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35,640

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Verical

USA . 1,202 parts In-Stock

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1,202

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Avnet

USA . 1,080 parts In-Stock

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1,080

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 49 parts In-Stock

1+ parts

$5.421

100+ parts

-

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49

$5.421

-

-

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Digiode

USA . 728 parts In-Stock

1+ parts

$5.728

100+ parts

-

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728

$5.728

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NAC Semi

USA . 83,160 parts In-Stock

1+ parts

-

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$4.620

83,160

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-

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$4.620

Chip Stock

USA . 20,100 parts In-Stock

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20,100

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Vyrian

USA . 6,515 parts In-Stock

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6,515

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Infinite Electronics LLP

India . 3,084 parts In-Stock

1+ parts

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3,084

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Cyclops Electronics Ltd

UK . 2,000 parts In-Stock

1+ parts

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2,000

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Component Sense

UK . 1,927 parts In-Stock

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1,927

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ACDS - Activité Composants Distribution Service

France . 768 parts In-Stock

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768

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Connector Distribution Corp

USA . 216 parts In-Stock

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216

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Right Parts Inc.

USA . 216 parts In-Stock

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216

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EMSNET

USA . 108 parts In-Stock

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108

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Elcom Components

USA . 41 parts In-Stock

1+ parts

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41

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Bristol Electronics

USA . 22 parts In-Stock

1+ parts

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22

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Sunrise Surplus Inc.

USA . 10 parts In-Stock

1+ parts

-

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10

-

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J2 Sourcing AB

Sweden . 6 parts In-Stock

1+ parts

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6

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Electronics Depot

USA . 4 parts In-Stock

1+ parts

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4

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 176 parts In-Stock

1+ parts

$3.151

100+ parts

-

1k+ parts

-

10k+ parts

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176

$3.151

-

-

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Andel Nordic

Denmark . 8,817 parts In-Stock

1+ parts

$3.701

100+ parts

-

1k+ parts

$3.553

10k+ parts

$3.553

8,817

$3.701

-

$3.553

$3.553

Aztec Data Supply Inc.

USA . 288 parts In-Stock

1+ parts

$4.070

100+ parts

-

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288

$4.070

-

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Semicontronic

India . 8,675 parts In-Stock

1+ parts

$4.280

100+ parts

$4.173

1k+ parts

$4.152

10k+ parts

-

8,675

$4.280

$4.173

$4.152

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Ampacity Inc.

Singapore . 5,565 parts In-Stock

1+ parts

$4.280

100+ parts

-

1k+ parts

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10k+ parts

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5,565

$4.280

-

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Continental Prestige Electronics

USA . 3,001 parts In-Stock

1+ parts

$5.372

100+ parts

-

1k+ parts

-

10k+ parts

$5.265

3,001

$5.372

-

-

$5.265

Corphita

USA . 2,200 parts In-Stock

1+ parts

$5.427

100+ parts

-

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2,200

$5.427

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A-Z Elektronik GmbH

Germany . 19,677 parts In-Stock

1+ parts

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19,677

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RC Electronics

USA . 5,511 parts In-Stock

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5,511

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S.R.D Solutions

India . 3,750 parts In-Stock

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3,750

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Argo Parts USA

USA . 2,470 parts In-Stock

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2,470

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Microchip USA

USA . 1,778 parts In-Stock

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1,778

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Futuretech Components

Singapore . 1,399 parts In-Stock

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1,399

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GreenTree Electronics

Israel . 1,097 parts In-Stock

1+ parts

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1,097

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Kepictronics

USA . 1,000 parts In-Stock

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1,000

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Infinite Electronics LLP (Excess)

. 860 parts In-Stock

1+ parts

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860

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Authorized Procurement Solutions

USA . 821 parts In-Stock

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821

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Overview

Unlock the power of cutting-edge technology with Micron Technology's MT46V32M16P-5BIT:J DDR1 DRAM. With a focus on quality and reliability, Micron Technology delivers unparalleled performance for your applications. This versatile memory module is perfect for a wide range of devices, offering speed, efficiency, and seamless operation. Trust in Micron Technology to provide the best solution for all your memory needs, ensuring top-notch performance every time. Experience the difference with Micron Technology's innovative products.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the DRAM, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy and secure mounting on PCBs, making installation quick and efficient.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to fit and secure in electronic devices, saving space.

Operating Mode: SYNCHRONOUS

Synchronous operation improves data transfer efficiency and overall performance.

Self Refresh: YES

Self-refresh capability helps in maintaining data integrity and reliability during power interruptions.

Nominal Supply Voltage / Vsup (V): 2.6

The 2.6V supply voltage ensures stable and efficient power consumption for the DRAM.

Power Supplies (V): 2.6

The 2.6V power supply ensures consistent and reliable performance of the DRAM.

No. of Terminals: 66

The ample number of terminals allow for secure connections and data transfer within the DRAM.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The compact and thin profile design of the package saves space and enhances integration in devices.

Maximum Operating Temperature: 85 °C

The high operating temperature tolerance ensures the DRAM can function effectively in various environments.

Technical Specifications

DRAM MT46V32M16P-5BIT:J attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

.7 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

200 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

2,4,8

JESD-30 Code:

R-PDSO-G66

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

66

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP66,.46

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.6

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

2,4,8

Maximum Standby Current:

.005 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

230 mA

Maximum Supply Voltage (Vsup):

2.7 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

2.6

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

MT46V32M16P-5BIT:J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.28

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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