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MT53D512M32D2DS-046AUT:D

Micron Technology

MT53D512M32D2DS-046AUT:D by Micron Technology

Micron Technology's MT53D512M32D2DS-046AUT:D is a LPDDR4 DRAM with 512MX32 organization, operating at up to 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in automotive electronics or industrial systems.

Median Price

$26.725

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 15 parts In-Stock

1+ parts

$26.690

100+ parts

$20.350

1k+ parts

$19.270

10k+ parts

$19.030

15

$26.690

$20.350

$19.270

$19.030

DigiKey

USA . 12 parts In-Stock

1+ parts

$26.760

100+ parts

-

1k+ parts

-

10k+ parts

-

12

$26.760

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 1,000 parts In-Stock

1+ parts

$23.688

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

$23.688

-

-

-

Digiode

USA . 485 parts In-Stock

1+ parts

$25.356

100+ parts

-

1k+ parts

-

10k+ parts

-

485

$25.356

-

-

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Vyrian

USA . 5,279 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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5,279

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 41,866 parts In-Stock

1+ parts

$2.190

100+ parts

-

1k+ parts

-

10k+ parts

-

41,866

$2.190

-

-

-

Corohmni

South Africa . 51 parts In-Stock

1+ parts

$4.538

100+ parts

-

1k+ parts

-

10k+ parts

-

51

$4.538

-

-

-

AZTECH Wire

Italy . 566 parts In-Stock

1+ parts

$11.871

100+ parts

-

1k+ parts

-

10k+ parts

-

566

$11.871

-

-

-

Semicontronic

India . 183 parts In-Stock

1+ parts

$22.690

100+ parts

$22.123

1k+ parts

$22.009

10k+ parts

-

183

$22.690

$22.123

$22.009

-

Ampacity Inc.

Singapore . 41 parts In-Stock

1+ parts

$22.690

100+ parts

-

1k+ parts

-

10k+ parts

-

41

$22.690

-

-

-

Continental Prestige Electronics

USA . 910 parts In-Stock

1+ parts

$23.688

100+ parts

-

1k+ parts

-

10k+ parts

$23.214

910

$23.688

-

-

$23.214

Netroflash

USA . 100 parts In-Stock

1+ parts

$23.688

100+ parts

-

1k+ parts

$22.503

10k+ parts

$22.029

100

$23.688

-

$22.503

$22.029

Corphita

USA . 218 parts In-Stock

1+ parts

$24.021

100+ parts

-

1k+ parts

-

10k+ parts

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218

$24.021

-

-

-

Microchip USA

USA . 389 parts In-Stock

1+ parts

$61.390

100+ parts

$60.320

1k+ parts

$59.790

10k+ parts

$59.250

389

$61.390

$60.320

$59.790

$59.250

A-Z Elektronik GmbH

Germany . 6,692 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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6,692

-

-

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Argo Parts USA

USA . 3,910 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,910

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Authorized Procurement Solutions

USA . 60 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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60

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Overview

Experience superior performance and reliability with Micron Technology's MT53D512M32D2DS-046AUT:D DRAM module. Designed with cutting-edge technology, this product is perfect for a wide range of applications. With a nominal supply voltage of 1.1V and a maximum clock frequency of 2136.7 MHz, this memory module offers unmatched speed and efficiency. Say goodbye to slow loading times and hello to seamless multitasking. Upgrade your system today and enjoy the benefits of top-tier quality and performance that Micron Technology is known for.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is commonly used in electronic components, providing good durability and resistance to heat, making the product reliable.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and effort during manufacturing process.

Operating Mode: SYNCHRONOUS

Enables synchronized data transfer and processing, improving overall system performance.

Nominal Supply Voltage / Vsup (V): 1.1

Efficient power usage at a moderate voltage level, reducing energy consumption.

Maximum Clock Frequency (fCLK): 2136.7 MHz

High clock frequency allows for fast data access and processing speed, enhancing performance.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, ideal for battery-powered devices.

Memory IC Type: LPDDR4 DRAM

LPDDR4 DRAM offers high memory density and fast data transfer rates, making it suitable for high-performance applications.

Technical Specifications

DRAM MT53D512M32D2DS-046AUT:D attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX

Maximum Clock Frequency (fCLK):

2136.7 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

16,32

JESD-30 Code:

R-PBGA-B200

Length:

14.5 mm

Memory Density:

17179869184 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

200

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA200,12X22,32/25

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Screening Level:

AEC-Q100

Maximum Seated Height:

.8 mm

Self Refresh:

YES

Sequential Burst Length:

16,32

Maximum Supply Voltage (Vsup):

1.17 V

Minimum Supply Voltage (Vsup):

1.06 V

Nominal Supply Voltage / Vsup (V):

1.1

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

10 mm

Trade Compliance

MT53D512M32D2DS-046AUT:D Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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