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MT48LC32M16A2P-75:C

Micron Technology

MT48LC32M16A2P-75:C by Micron Technology

Micron Technology's MT48LC32M16A2P-75:C is a 32MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for commercial applications requiring fast access times and high memory density.

Median Price

$86.038

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

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Nova Conductors

Japan . 64 parts In-Stock

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Vyrian

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Chip Stock

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Legend Electronics Inc.

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Digiode

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Sensible Micro Corp

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ComSIT Distribution GmbH

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ComSIT USA

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LWI Electronics Inc

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Touchstone Systems

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Zilex Electronics Inc.

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Pegasus Components GmbH

Germany . 20 parts In-Stock

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Rebound Electronics

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Sea View Technologies

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Bristol Electronics

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Connect4Technologies Inc.

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Speed Components Ltd

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Goldney Electronics S.L.

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BCID Electronics Ltd.

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Corel Iberica Componentes, S.L.

Spain . 8 parts In-Stock

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Semtec, LLC

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ACDS - Activité Composants Distribution Service

France . 7 parts In-Stock

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Electronics Depot

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Semi Source

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Diverse Electronics

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MRC Electronics

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 119 parts In-Stock

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$2.520

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AZTECH Wire

Italy . 290 parts In-Stock

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$6.772

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Continental Prestige Electronics

USA . 1,289 parts In-Stock

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$9.901

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$9.703

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Netroflash

USA . 100 parts In-Stock

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$86.038

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$81.736

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$80.015

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$80.015

QUARKTWIN TECHNOLOGY LTD

USA . 24,534 parts In-Stock

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Authorized Procurement Solutions

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Perfect Parts

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A-Z Elektronik GmbH

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RC Electronics

USA . 3,635 parts In-Stock

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S.R.D Solutions

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Futuretech Components

Singapore . 2,108 parts In-Stock

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ChipTracer

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Metaverse IC Inc.

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Argo Parts USA

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Corphita

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Microchip USA

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iodParts Technologies Inc.

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Speed Components Ltd (Excess)

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GreenTree Electronics

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Cyclops Electronics Ltd (Excess)

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Overview

Experience superior performance and reliability with the MT48LC32M16A2P-75:C by Micron Technology. As a leader in DRAM technology, Micron delivers innovative solutions that meet the highest industry standards. This versatile memory module is perfect for a wide range of applications, offering seamless operation and efficient data processing. Trust Micron's reputation for quality and innovation to enhance your products and elevate your performance. Unlock the full potential of your devices with the MT48LC32M16A2P-75:C today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material ensures durability and reliability, ideal for long-term use.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and coordination with other components for optimal performance.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a standard voltage of 3.3V, ensuring compatibility with various systems and devices.

Maximum Clock Frequency (fCLK): 133 MHz

High clock frequency allows for fast data transfer and processing, making this product suitable for performance-intensive tasks.

Memory Density: 536870912 bit

High memory density provides ample storage capacity, making it suitable for applications that require large amounts of data to be stored and accessed.

Technical Specifications

DRAM MT48LC32M16A2P-75:C attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

133 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G54

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP54,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.0035 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

255 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

MT48LC32M16A2P-75:C Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.28

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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