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EDB8132B4PB-8D-F-D

Micron Technology

EDB8132B4PB-8D-F-D by Micron Technology

Micron Technology's EDB8132B4PB-8D-F-D is a 256MX32 LPDDR2 DRAM with a square package and PLASTIC/EPOXY body material. It operates in SYNCHRONOUS mode, has a self-refresh feature, and requires a nominal voltage of 1.2V. This memory module is suitable for applications that require high-density data storage and fast access speeds.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 15,100 parts In-Stock

1+ parts

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15,100

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Vyrian

USA . 4,201 parts In-Stock

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4,201

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Digiode

USA . 425 parts In-Stock

1+ parts

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425

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 74 parts In-Stock

1+ parts

$2.303

100+ parts

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74

$2.303

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Aztec Data Supply Inc.

USA . 1,234 parts In-Stock

1+ parts

$5.020

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1,234

$5.020

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AZTECH Wire

Italy . 468 parts In-Stock

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$9.362

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468

$9.362

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Ampacity Inc.

Singapore . 1,492 parts In-Stock

1+ parts

$25.000

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1,492

$25.000

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Continental Prestige Electronics

USA . 4,430 parts In-Stock

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4,430

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Argo Parts USA

USA . 2,990 parts In-Stock

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2,990

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Corphita

USA . 714 parts In-Stock

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714

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Microchip USA

USA . 115 parts In-Stock

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115

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Overview

Experience the power of cutting-edge technology with the EDB8132B4PB-8D-F-D by Micron Technology. As a leading manufacturer in the industry, Micron Technology delivers top-quality DRAM products that redefine speed and efficiency. Whether you're a gamer, a content creator, or simply looking to boost your device's performance, this product is designed to exceed your expectations. With its synchronous operating mode and self-refresh capabilities, it offers seamless multitasking and lightning-fast data access. Its compact square shape and very thin profile make it easy to integrate into any device. Upgrade your device today and unlock its full potential with the EDB8132B4PB-8D-F-D by Micron Technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, ensuring a long-lasting and reliable product.

Surface Mount: YES

The surface mount feature allows for easy installation, making it convenient and efficient for electronics manufacturing processes.

Package Shape: SQUARE

The square shape offers a compact design, enabling space-saving integration in various devices and applications.

O/ating Mode: SYNCHRONOUS

The synchronous o/ation ensures precise and synchronized data transfers, enhancing overall system /formance and efficiency.

Self Refresh: YES

The self-refresh capability enables power-saving functionality by maintaining memory content without requiring external refresh signals, contributing to energy efficiency.

Nominal Supply Voltage (Vsup): 1.2

The low nominal supply voltage enhances power efficiency and reduces heat generation, optimizing energy consumption.

No. of Terminals: 168

With a higher number of terminals, this product provides a wider range of connectivity options, offering flexibility for system integration.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

The grid array package style with a very thin profile and fine pitch allows for densely packed memory modules, enabling higher memory capacity in limited space.

Organization: 256MX32

The 256MX32 organization provides a large memory capacity and efficient data management, accommodating high-/formance tasks and applications.

Terminal Position: BOTTOM

The bottom terminal position facilitates easy and reliable connections, ensuring convenient installation and maintenance.

Maximum Seated Height: 0.8 mm

The low maximum seated height enables compatibility with slim and compact electronic devices, enhancing design versatility.

Width: 12 mm

The compact width contributes to product compatibility and facilitates integration in various electronic systems and designs.

Minimum Supply Voltage (Vsup): 1.14 V

The low minimum supply voltage further enhances power efficiency, reducing energy consumption and maximizing battery life.

Length: 12 mm

The compact length provides flexibility for fitting the product into space-constrained devices and equipment.

Access Mode: SINGLE BANK PAGE BURST

The single bank page burst access mode improves data transfer speed and efficiency, making it suitable for high-/formance computing tasks.

Technology: CMOS

The CMOS technology offers low power consumption, high-speed o/ation, and compatibility with a wide range of electronic systems, making it an efficient and versatile choice.

Terminal Form: BALL

The ball terminal form ensures a reliable electrical connection and simplifies the installation process, enhancing usability and convenience.

No. of Words: 268435456 words

With a high number of words, this product provides ample storage capacity, accommodating large amounts of data and information.

Memory Width: 32

The memory width of 32 bits allows for efficient data transfer and processing capabilities, contributing to enhanced system /formance.

Terminal Pitch: 0.5 mm

The compact terminal pitch enables higher-density packaging of memory modules, allowing for increased memory capacity in constrained spaces.

No. of Words Code: 256M

The 256M words code offers a standardized and widely-used memory configuration, ensuring compatibility and ease of integration in various systems.

Maximum Supply Voltage (Vsup): 1.3 V

The maximum supply voltage tolerance provides a safe o/ating range, protecting the product against potential voltage fluctuations and ensuring stability.

Memory Density: 8589934592 bit

With a high memory density, this product can store a large amount of data, making it suitable for data-intensive applications and tasks.

Memory IC Type: LPDDR2 DRAM

The LPDDR2 DRAM type combines high-speed /formance, low power consumption, and increased memory capacity, making it ideal for mobile devices and other memory-demanding applications.

Technical Specifications

DRAM EDB8132B4PB-8D-F-D attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

SINGLE BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

JESD-30 Code:

S-PBGA-B168

Length:

12 mm

Memory Density:

8589934592 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

168

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Organization:

256MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

.8 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.3 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

12 mm

Trade Compliance

EDB8132B4PB-8D-F-D Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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