Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Terminal Form: BALL; No. of Functions: 1;
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DRAM EDB8132B4PM-1D-F-D attributes and parameters. Explore more DRAM devices from Micron Technology
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EDB8132B4PM-1D-F-D Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.36
SB
8542.32.00.23
PCN Obsolescence/ EOL - Mult Dev EOL 19/Nov/2019
PCN Packaging - Label 12/Sep/2016 Standard Pkg Label Chg 20/Feb/2019
Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.
President, CEO
Sanjay Mehrotra
Executive VP, CFO
Mark J. Murphy
Executive VP, CBO
Sumit Sadana
Fab 4
Fabrication
Fab Initiation
1994
USA
Boise
Wafer Capacity
8,750
Fab 6
1997
Manassas
23,000
2006
28,000
Fab 11
2007
Taiwan
Taoyuan
34,000
Fab 16 A1
Taichung
50,000
Fab 16 A3
2021
3,000
Fab 15
2002
Japan
Hiroshima
98,000
2004
New Hiroshima DRAM Fab
2017
11,750
Fab 10W
2016
Singapore
20,000
Fab 10X
55,000
2019
18,000
Fab 10A
Fab 10N
2014
47,000
2000
32,000
2012
6,000
Fab 16 A2
2015
43,000
New Clay Fab Phase 1
2027
Clay
New Boise Fab 1
2025
Fab 16 A5
2028
Expansion Fab
2020
2N2222A
Semitronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
RC0402JR-070RL
Yageo
Yageo's RC0402JR-070RL is a SMT fixed resistor with 0 ohm resistance, rated for temperatures from -55 to 155 °C. It features METAL GLAZE/THICK FILM tech, WRAPAROUND terminals, and 0.0625 W power dissipation. Ideal for jumper applications in electronics requiring compact surface mount components.
BAV99
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Secos
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (ID): .115 A; Maximum Drain-Source On Resistance: 7.5 ohm;
Kingwell Technonlogy
STM32F103C8T6
STMicroelectronics
STM32F103C8T6 by STMicroelectronics is a 32-bit microcontroller with 48 terminals, operating at up to 16 MHz. It features 10-Ch 12-Bit ADC channels and 7 DMA channels, suitable for industrial applications requiring low power consumption and high-speed connectivity via CAN, I2C(2), SPI(2), USART(3), USB.
LM317T
Linear Technology
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Operating Temperature (TJ-Min): 0 Cel; No. of Functions: 1; JESD-609 Code: e0;
M24308/2-1F
Cinch Connectivity Solutions
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Body Depth: .375 inch;
SMBJ18CA
Multicomp Pro
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Diode Element Material: SILICON; Technology: AVALANCHE; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V;
Philips Semiconductors
RECTIFIER DIODE; Surface Mount: YES; Maximum Output Current: .1 A; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN; Maximum Reverse Recovery Time: .006 us;
BAV99LT1G
Onsemi
BAV99LT1G by Onsemi is a series connected diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.006 us and can handle up to 100V repetitive peak reverse voltage. Ideal for rectification applications, this diode operates b/w -65°C to 150°C temperature range.
LM555CN
Texas Instruments
LM555CN by Texas Instruments is an Analog Waveform Generation IC with a supply voltage range of 4.5V to 16V. It operates b/w 0°C to 70°C, making it suitable for commercial applications. This rectangular package IC has dual terminals and uses bipolar technology for pulse generation in various electronic circuits.
IRLML6402TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Peak Reflow Temperature (C): 260; Package Style (Meter): SMALL OUTLINE;
EU2B-YS3203F
Idec
ROTARY SWITCH;
Allegro MicroSystems
LM555CMX
LM555CMX by Texas Instruments is an Analog Waveform Generation IC with 8 terminals. It operates at a nominal voltage of 5V and supports power supplies ranging from 5V to 15V. This versatile IC, housed in a small outline package, is commonly used for pulse and rectangular waveform generation in commercial temperature environments.
BSS138NH6327XTSA2
Infineon Technologies
BSS138NH6327XTSA2 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for small signal applications. Operating in Enhancement Mode, it has 0.36W Power Dissipation and 3.5 ohm Drain-Source Resistance. With Gull Wing terminals and AEC-Q101 reference standard, it's suitable for automotive electronics due to its high temperature range of -55 to 150 °C.
MBR0540T1G
MBR0540T1G by Onsemi is a Schottky rectifier diode with max. forward voltage of 0.62V and max. output current of 0.5A, ideal for applications requiring high efficiency power conversion in small outline packages. Operating temp range: -55 to 150°C, with peak reflow temp at 260°C, making it suitable for various electronic devices needing reliable rectification performance in compact designs.
General Transistor
LM317AEMP/NOPB
LM317AEMP/NOPB by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and a max output current of 1.5A. It operates in temperatures ranging from -40°C to 125°C, making it suitable for various applications requiring precise voltage regulation in a compact package.
S27KS0642GABHB020
Cypress Semiconductor
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Technology: CMOS; Terminal Pitch: 1 mm;
EDB4432BBBJ-1DAAT-F-R
Micron Technology
Micron Technology's EDB4432BBBJ-1DAAT-F-R is a LPDDR2 DRAM with 128MX32 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and single bank page burst access. Ideal for applications requiring high memory density and low power consumption in compact devices.
K4W1G1646G-BC11
Samsung
Samsung's K4W1G1646G-BC11 DDR3 DRAM features 64MX16 organization, 933 MHz clock frequency, and 1073741824 bit memory density. Ideal for high-performance computing applications requiring fast data processing and large memory capacity.
MT40A256M16LY-062EAUT:FTR
Micron Technology's MT40A256M16LY-062EAUT:FTR is a DDR4 DRAM with 256MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.
MT48LC2M32B2P-7:GTR
MT48LC2M32B2P-7:GTR by Micron Technology is a 2MX32 Synchronous DRAM with a memory density of 67108864 bit. It operates at a max temperature of 70°C and has a supply voltage range of 3V to 3.6V. This memory IC is commonly used in applications requiring high-speed data storage and retrieval, such as computer systems and networking devices.
IS42S32800J-6TLI
Integrated Silicon Solution
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 86; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;
AS4C512M16D3LB-12BINTR
Alliance Memory
Alliance Memory's AS4C512M16D3LB-12BINTR is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in a compact grid array package.
IS43R16320D-6BL
IS43R16320D-6BL by Integrated Silicon Solution is a 32MX16 DDR1 DRAM with a max clock frequency of 166 MHz. It operates synchronously and has a memory density of 536870912 bit. It is commonly used in applications requiring high-speed data storage and retrieval.
MTA4ATF1G64HZ-3G2E1
Micron Technology's MTA4ATF1G64HZ-3G2E1 is a DDR4 DRAM MODULE with 1GX64 organization, operating at up to 1600 MHz. It features self-refresh capability and synchronous operation, making it ideal for high-performance computing applications.
MT48LC16M16A2P-7E:D
Micron Technology's MT48LC16M16A2P-7E:D is a 16MX16 Synchronous DRAM with 16777216 words. It operates at 143 MHz, has a memory density of 268435456 bit, and supports a max clock frequency of 143 MHz. Ideal for applications requiring fast data access and storage in commercial-grade environments.
IS42S32800J-6BLI-TR
IS42S32800J-6BLI-TR by Integrated Silicon Solution is an 8MX32 Synchronous DRAM with 268Mbit memory density. Operating at 3.3V, it offers a max access time of 5.4ns and features self-refresh capability. Ideal for industrial applications requiring high-speed memory performance in a compact GRID ARRAY package.
AS4C512M8D4-83BIN
Alliance Memory's AS4C512M8D4-83BIN is a DDR4 DRAM with 512MX8 organization, operating at up to 1200 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
MT41J64M16JT-15EXIT:G
Micron Technology's MT41J64M16JT-15EXIT:G is a DDR3 DRAM with 64MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and a memory width of 16 bits. Ideal for industrial applications requiring high memory density and multi-bank page burst access mode.
MT48LC8M16A2TG-75IT:GTR
Micron Technology's MT48LC8M16A2TG-75IT:GTR is a 3.3V, 8MX16 Synchronous DRAM with 8388608 words and 134217728 bit memory density. Operating in industrial temperature range, it features self-refresh capability and offers fast access time of 5.4 ns. Ideal for applications requiring high-speed data processing and reliable memory performance.
M366S3253ETS-C7A
Samsung M366S3253ETS-C7A is a 32MX64 Synchronous DRAM with 3.3V supply, operating at 133MHz. Ideal for commercial applications, it offers self-refresh capability and a memory density of 2GB, featuring a max access time of 5.4ns for high-speed data processing.
IS43LD32128B-25BLI
IS43LD32128B-25BLI by Integrated Silicon Solution is a 128MX32 LPDDR2 DRAM with a max clock frequency of 400 MHz. It operates in synchronous mode and has a memory density of 4,294,967,296 bits. This DRAM is commonly used in applications that require high-speed data storage and retrieval.
MT48LC16M16A2P-6A:GTR
Micron Technology's MT48LC16M16A2P-6A:GTR is a 16MX16 Synchronous DRAM with 16777216 words, 268435456 bit memory density, and 5.4 ns max access time. It operates at 3.3V, has a temperature range of 0-70°C, and is suitable for commercial applications requiring high-speed memory performance.
MT40A4G8NEA-062E:F
MT40A4G8NEA-062E:F by Micron Technology is a DDR4 DRAM with 4GX8 organization, operating at up to 1600 MHz. It features a thin profile grid array package, common I/O type, and self-refresh capability. Ideal for applications requiring high-speed synchronous memory with a density of 34 Gb and low power consumption.
MT40A512M16JY-083E:B
Micron Technology's MT40A512M16JY-083E:B is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in devices like servers and high-performance computing systems.
MT48LC16M16A2P-6AIT
MT48LC16M16A2P-6AIT by Micron Technology is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, 5.4 ns access time, and 8192 refresh cycles. It is ideal for industrial applications requiring high-speed memory operations in a compact package with common I/O type and self-refresh capability.
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EDB8132B4PB-8D-F-D
Micron Technology's EDB8132B4PB-8D-F-D is a 256MX32 LPDDR2 DRAM with a square package and PLASTIC/EPOXY body material. It operates in SYNCHRONOUS mode, has a self-refresh feature, and requires a nominal voltage of 1.2V. This memory module is suitable for applications that require high-density data storage and fast access speeds.
EDB8132B4PB-8D-F-R
LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH; Length: 12 mm;
EDB8164B3PH-8D-F
DDR2 DRAM; No. of Terminals: 240; Package Code: VFBGA; Package Shape: SQUARE; Peak Reflow Temperature (C): NOT SPECIFIED; Operating Mode: SYNCHRONOUS;
EDB8132B3PB-1D-F
DDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Memory Density: 8589934592 bit; Maximum Seated Height: .8 mm;
EDB8132B4PM-1DAT-F-R
LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Surface Mount: YES; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH;
EDB8164B3PF-8D-F
DDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Memory Width: 64; No. of Words: 134217728 words;
EDB8164B3PH-1D-F
DDR2 DRAM; No. of Terminals: 240; Package Code: VFBGA; Package Shape: SQUARE; Terminal Position: BOTTOM; Package Body Material: PLASTIC/EPOXY;
EDB8164B4PK-1D-F-D
LPDDR2 DRAM; No. of Terminals: 220; Package Code: VFBGA; Package Shape: SQUARE; Memory Density: 8589934592 bit; Terminal Form: BALL;
EDB8064B1PB-8D-F
DDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Length: 12 mm; No. of Functions: 1;
EDB8132B3PB-8D-F
DDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Organization: 256MX32; Operating Mode: SYNCHRONOUS;
EDB8132B4PM-1D-F-R
LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Terminal Form: BALL; Maximum Seated Height: .82 mm;
EDB8164B3PF-1D-F
DDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; No. of Words Code: 128M; Access Mode: MULTI BANK PAGE BURST;
EDB8132B3MC-8D-F
DDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 1.14 V; Width: 11.5 mm;
EDB8164B3PD-1D-F
DDR2 DRAM; No. of Terminals: 220; Package Code: VFBGA; Package Shape: SQUARE; Maximum Supply Voltage (Vsup): 1.3 V; No. of Ports: 1;
EDB8132B4PM-1DAT-F-D
LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; No. of Ports: 1; Maximum Seated Height: .82 mm;
EDB8064B1PB-6D-F
DDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Terminal Form: BALL; Package Body Material: PLASTIC/EPOXY;
EDB8132B3MC-1D-F
DDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: SQUARE; Technology: CMOS; JESD-30 Code: S-PBGA-B134;
EDB8132B3PD-1D-F
DDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Maximum Supply Voltage (Vsup): 1.3 V; No. of Functions: 1;
EDB8164B3PD-8D-F
DDR2 DRAM; No. of Terminals: 220; Package Code: VFBGA; Package Shape: SQUARE; Maximum Seated Height: .8 mm; Self Refresh: YES;
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