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MT48LC2M32B2P-7:GTR

Micron Technology

MT48LC2M32B2P-7:GTR by Micron Technology

MT48LC2M32B2P-7:GTR by Micron Technology is a 2MX32 Synchronous DRAM with a memory density of 67108864 bit. It operates at a max temperature of 70°C and has a supply voltage range of 3V to 3.6V. This memory IC is commonly used in applications requiring high-speed data storage and retrieval, such as computer systems and networking devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 4,504 parts In-Stock

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Vyrian

USA . 3,155 parts In-Stock

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Digiode

USA . 1,271 parts In-Stock

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Nova Conductors

Japan . 650 parts In-Stock

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650

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Distributors (Availability)

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Corohmni

South Africa . 907 parts In-Stock

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$3.454

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907

$3.454

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Aztec Data Supply Inc.

USA . 3,020 parts In-Stock

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$4.400

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$4.400

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AZTECH Wire

Italy . 355 parts In-Stock

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$8.126

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355

$8.126

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Ampacity Inc.

Singapore . 588 parts In-Stock

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$11.000

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Argo Parts USA

USA . 2,954 parts In-Stock

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Continental Prestige Electronics

USA . 2,494 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,341 parts In-Stock

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Kepictronics

USA . 1,000 parts In-Stock

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Corphita

USA . 946 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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Microchip USA

USA . 448 parts In-Stock

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Overview

Experience the next level of performance with the MT48LC2M32B2P-7:GTR by Micron Technology. As a leading manufacturer in the industry, Micron Technology delivers top-notch quality and reliability. This DRAM module offers impressive speed and efficiency, making it ideal for a wide range of applications. Whether you're gaming, working on complex projects, or multitasking, this product ensures smooth and seamless operation. With its compact design and advanced technology, it maximizes space utilization while providing exceptional memory density. Upgrade your system today and unlock the full potential of your device with the MT48LC2M32B2P-7:GTR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product's use of plastic/epoxy as the package body material ensures durability and resistance to physical damage, making it suitable for various environments.

Surface Mount: YES

The surface mount feature allows for easy installation and integration, saving time and effort during assembly and making this product convenient for manufacturers and end-users.

Package Shape: RECTANGULAR

The rectangular package shape provides compatibility with standardized mounting techniques and allows for efficient use of space on circuit boards, enhancing overall design flexibility.

Operating Mode: SYNCHRONOUS

With its synchronous operating mode, this product ensures precise timing and synchronization within systems, resulting in improved performance and reliable data transfer.

Self Refresh: YES

The self-refresh capability of this product allows for power-saving and reduced energy consumption, making it an energy-efficient choice for power-conscious applications.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V provides compatibility with standard voltage levels, ensuring smooth operation and compatibility within a wide range of systems.

No. of Terminals: 86

With 86 terminals available, this product offers ample connectivity options, providing a wide range of integration possibilities and compatibility with various devices.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline and thin profile package style enables space-saving and compact design, making it ideal for applications with limited board area.

Maximum Operating Temperature: 70 °C

The maximum operating temperature of 70°C ensures reliable and stable performance, even in demanding and high-temperature environments.

Organization: 2MX32

The organization of 2MX32 allows for high data storage capacity, making this product suitable for applications that require large memory capacity, such as servers or high-performance computing systems.

Minimum Operating Temperature: 0 °C

The minimum operating temperature of 0°C ensures reliable performance even in cold environments, making this product suitable for various temperature conditions.

Terminal Finish: Matte Tin (Sn)

With a matte tin terminal finish, this product offers excellent solderability, ensuring reliable electrical connections and facilitating the manufacturing process.

Terminal Position: DUAL

The dual terminal position provides flexibility in system design and improves signal integrity, contributing to overall product reliability and performance.

Maximum Seated Height: 1.2 mm

With a maximum seated height of 1.2mm, this product offers low-profile packaging, allowing for compact and sleek device designs.

Width: 10.16 mm

The width dimensions of 10.16mm contribute to the product's compact form factor, making it suitable for applications with limited space.

Minimum Supply Voltage (Vsup): 3 V

The minimum supply voltage of 3V ensures compatibility with low-power systems while still providing reliable performance and operation.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures safe and efficient soldering during assembly, minimizing the risk of thermal damage to the product.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures proper soldering and robust connections, meeting industry standards and ensuring reliable performance in the field.

Length: 22.22 mm

The length dimensions of 22.22mm contribute to the product's compact form factor, making it suitable for applications with limited space.

Temperature Grade: COMMERCIAL

This product's commercial temperature grade guarantees reliable operation within standard temperature ranges, making it suitable for everyday consumer electronics applications.

Access Mode: FOUR BANK PAGE BURST

The access mode of four bank page burst enables efficient and rapid access to stored data, enhancing system performance and response times.

Technology: CMOS

The use of CMOS technology ensures low power consumption, high-speed operation, and compatibility with a wide range of systems, providing an optimal balance of performance and efficiency.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy and secure soldering, ensuring reliable electrical connections and simplifying the assembly process.

No. of Words: 2097152 words

With a large number of words available, this product offers ample storage capacity, making it suitable for data-intensive applications that require extensive memory.

Memory Width: 32

The memory width of 32 ensures compatibility with systems that require a specific data width, providing seamless integration and optimal performance.

Terminal Pitch: 0.5 mm

The terminal pitch of 0.5mm allows for precise and compact device assembly, contributing to a higher level of miniaturization and integration in modern electronic devices.

No. of Words Code: 2M

The 2M words code provides a simplified and standardized method for identifying the available memory capacity, ensuring easy selection and integration into systems.

Maximum Supply Voltage (Vsup): 3.6 V

The maximum supply voltage of 3.6V accommodates systems with higher voltage requirements while still maintaining stable operation and compatibility.

Memory Density: 67108864 bit

With a high memory density of 67108864 bits, this product offers extensive storage space for data-intensive applications, enabling efficient and seamless operation.

Memory IC Type: SYNCHRONOUS DRAM

The memory IC type of synchronous DRAM ensures high-speed access and data transfer capabilities, making this product suitable for applications that require fast and efficient memory access.

Maximum Access Time: 5.5 ns

With a maximum access time of 5.5ns, this product provides fast and responsive data access, enhancing overall system performance and user experience.

Technical Specifications

DRAM MT48LC2M32B2P-7:GTR attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.5 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PDSO-G86

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

86

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

MT48LC2M32B2P-7:GTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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