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IS42S16100H-7TLI

Integrated Silicon Solution

IS42S16100H-7TLI by Integrated Silicon Solution

IS42S16100H-7TLI by Integrated Silicon Solution is a 1MX16 Synchronous DRAM with 3.3V supply, operating at up to 143 MHz clock frequency. Ideal for industrial applications, it features dual bank page burst access mode and offers a memory density of 16Mbit in a small outline package.

Median Price

$2.670

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 444 parts In-Stock

1+ parts

$3.830

100+ parts

$3.392

1k+ parts

$3.111

10k+ parts

$3.045

444

$3.830

$3.392

$3.111

$3.045

Mouser Electronics

USA . 59 parts In-Stock

1+ parts

$3.830

100+ parts

$3.400

1k+ parts

$3.290

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-

59

$3.830

$3.400

$3.290

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Chip1Stop

Japan . 468 parts In-Stock

1+ parts

-

100+ parts

$1.165

1k+ parts

$1.145

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468

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$1.165

$1.145

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EBV Elektronik

Germany . 468 parts In-Stock

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468

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Arrow

USA . 450 parts In-Stock

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$1.146

1k+ parts

$1.027

10k+ parts

$0.939

450

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$1.146

$1.027

$0.939

Rochester

USA . 169 parts In-Stock

1+ parts

-

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$1.510

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$1.250

10k+ parts

$1.120

169

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$1.510

$1.250

$1.120

Verical

USA . 21 parts In-Stock

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-

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$4.316

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21

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$4.316

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Distributors (In-Stock)

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$1.499

100+ parts

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300

$1.499

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TME

Poland . 7 parts In-Stock

1+ parts

$2.050

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7

$2.050

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Vyrian

USA . 16,485 parts In-Stock

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Chip Stock

USA . 14,200 parts In-Stock

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NAC Semi

USA . 1,404 parts In-Stock

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$1.530

10k+ parts

$1.410

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$1.530

$1.410

Sensible Micro Corp

USA . 44 parts In-Stock

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Continental Prestige Electronics

USA . 4,494 parts In-Stock

1+ parts

$1.499

100+ parts

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1k+ parts

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10k+ parts

$1.469

4,494

$1.499

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$1.469

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$1.499

100+ parts

$1.469

1k+ parts

$1.424

10k+ parts

$1.394

2,000

$1.499

$1.469

$1.424

$1.394

Argo Parts USA

USA . 1,415 parts In-Stock

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$1.499

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$1.499

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Lixinc

USA . 11,395 parts In-Stock

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Component Stockers USA

USA . 745 parts In-Stock

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745

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Perfect Parts

USA . 655 parts In-Stock

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655

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GreenTree Electronics

Israel . 493 parts In-Stock

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493

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Eastek

USA . 399 parts In-Stock

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399

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Infinite Electronics LLP (Excess)

. 353 parts In-Stock

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353

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iodParts Technologies Inc.

India . 232 parts In-Stock

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$2.767

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$2.767

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Futuretech Components

Singapore . 200 parts In-Stock

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Legend Electronics Inc. (Excess)

USA . 100 parts In-Stock

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100

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Speed Components Ltd (Excess)

Israel . 100 parts In-Stock

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100

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Overview

Experience unparalleled performance and reliability with the IS42S16100H-7TLI by Integrated Silicon Solution. As a leading manufacturer in the DRAM category, ISS delivers cutting-edge technology suitable for various industrial applications. With a nominal supply voltage of 3.3V and a maximum clock frequency of 143 MHz, this memory IC offers exceptional speed and efficiency. Benefit from its self-refresh capability, common input/output type, and dual bank page burst access mode for seamless operation. Trust ISS to provide top-quality products that exceed expectations and enhance your projects with superior memory solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the product lightweight and durable, ideal for portable devices.

Surface Mount: YES

Easy installation and space-saving design make this product suitable for compact electronics.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient utilization of board space in electronic devices.

Operating Mode: SYNCHRONOUS

This mode ensures faster and more efficient data transfer, improving overall system performance.

Self Refresh: YES

The self-refresh feature helps maintain data integrity and reliability, making this product a dependable choice for critical applications.

Input/Output Type: COMMON

Common input/output type simplifies circuit design and integration, reducing development time and costs.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage provides compatibility with a wide range of systems and power sources.

Power Supplies (V): 3.3

Consistent power supply ensures stable and reliable operation of the product.

No. of Terminals: 50

The high number of terminals allows for versatile connectivity options, enhancing compatibility with various systems.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline and thin profile design save space on the circuit board, ideal for compact devices.

Maximum Operating Temperature: 85 °C

The high operating temperature range ensures the product can withstand harsh environmental conditions.

Organization: 1MX16

The 1MX16 organization provides high memory capacity and faster data access, suitable for demanding applications.

Output Characteristics: 3-STATE

The 3-state output allows for efficient data transmission and bus sharing among multiple components.

Minimum Operating Temperature: -40 °C

The low operating temperature range ensures the product can function in extreme cold environments.

Terminal Position: DUAL

The dual terminal position enhances signal integrity and reliability, critical for high-performance applications.

Maximum Seated Height: 1.2 mm

The low seated height offers flexibility in design and installation, suitable for slim devices.

Maximum Clock Frequency (fCLK): 143 MHz

The high clock frequency enables rapid data transfer and processing, enhancing overall system performance.

Width: 10.16 mm

The compact width of the product allows for efficient use of board space in electronic devices.

Minimum Supply Voltage (Vsup): 3 V

The minimum supply voltage requirement ensures compatibility with a wide range of power sources.

Length: 20.95 mm

The length of the product is optimized for efficient placement on the circuit board, maximizing space utilization.

Temperature Grade: INDUSTRIAL

The industrial-grade temperature rating makes this product suitable for rugged environments and extended operating conditions.

Access Mode: DUAL BANK PAGE BURST

The dual bank page burst access mode enhances memory access speed and efficiency, ideal for high-performance systems.

Technology: CMOS

CMOS technology offers low power consumption and high-speed operation, making this product energy-efficient and reliable.

Terminal Form: GULL WING

The gull-wing terminal form provides secure connections and easy soldering, ensuring robust electrical contacts.

Maximum Supply Current: 70 mA

The maximum supply current requirement is within a reasonable range for efficient power consumption and system operation.

No. of Words: 1048576 words

The high number of words indicates a large memory capacity, suitable for data-intensive applications.

Sequential Burst Length: 1,2,4,8,FP

The multiple burst lengths options provide flexibility in data transfer rates, catering to different system requirements.

Memory Width: 16

The 16-bit memory width offers high data bandwidth and efficient data processing capabilities.

Terminal Pitch: 0.8 mm

The small terminal pitch allows for compact and precise connections, essential for space-constrained applications.

No. of Words Code: 1M

The 1M words code indicates a high memory density, providing ample storage capacity for diverse data needs.

Maximum Supply Voltage (Vsup): 3.6 V

The high maximum supply voltage tolerance ensures compatibility with various power sources and system configurations.

Memory Density: 16777216 bit

The high memory density offers extensive data storage capacity, suitable for memory-intensive applications.

Memory IC Type: SYNCHRONOUS DRAM

The Synchronous DRAM type ensures fast and reliable data access, enhancing overall system performance.

Maximum Standby Current: 0.0035 Amp

The low standby current consumption helps conserve power and prolong battery life in portable devices.

Refresh Cycles: 2048

The high refresh cycle count ensures data retention and integrity, crucial for long-term data storage and reliability.

Interleaved Burst Length: 1,2,4,8

The interleaved burst length capabilities enable efficient data transfer and processing, enhancing system performance.

Maximum Access Time: 5.5 ns

The low maximum access time ensures fast data retrieval and processing, critical for high-speed applications.

Technical Specifications

DRAM IS42S16100H-7TLI attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

DUAL BANK PAGE BURST

Maximum Access Time:

5.5 ns

Additional Features:

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

143 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G50

Length:

20.95 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

50

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP50,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.0035 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

70 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

IS42S16100H-7TLI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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