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MT40A2G8NRE-083E:B

Micron Technology

MT40A2G8NRE-083E:B by Micron Technology

Micron Technology's MT40A2G8NRE-083E:B is a DDR4 DRAM with 2GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. This thin profile memory module is ideal for applications requiring high-speed data processing in compact electronic devices.

Median Price

$25.950

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics

USA . 121 parts In-Stock

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$25.950

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121

$25.950

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Cyclops Electronics Ltd

UK . 6,790 parts In-Stock

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Chip Stock

USA . 4,520 parts In-Stock

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4,520

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Vyrian

USA . 2,738 parts In-Stock

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2,738

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Digiode

USA . 1,456 parts In-Stock

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1,456

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Netsource Technology, Inc.

USA . 360 parts In-Stock

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360

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Bristol Electronics

USA . 6 parts In-Stock

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6

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Classic Components Corporation

USA . 6 parts In-Stock

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Elcom Components

USA . 3 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 73 parts In-Stock

1+ parts

$5.580

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73

$5.580

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Ampacity Inc.

Singapore . 625 parts In-Stock

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$12.000

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625

$12.000

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AZTECH Wire

Italy . 651 parts In-Stock

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$19.404

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651

$19.404

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A-Z Elektronik GmbH

Germany . 9,436 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 7,189 parts In-Stock

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Continental Prestige Electronics

USA . 6,729 parts In-Stock

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Perfect Parts

USA . 5,646 parts In-Stock

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Kepictronics

USA . 3,435 parts In-Stock

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RC Electronics

USA . 1,311 parts In-Stock

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Argo Parts USA

USA . 1,186 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Corphita

USA . 939 parts In-Stock

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939

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Bastille Electronics

Australia . 800 parts In-Stock

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800

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Microchip USA

USA . 254 parts In-Stock

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254

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Overview

Unlock the power of cutting-edge technology with the MT40A2G8NRE-083E:B by Micron Technology. As a leader in the industry, Micron delivers top-quality DRAM products that guarantee superior performance and reliability. Whether you're looking to enhance your gaming experience, boost productivity at work, or streamline your data processing tasks, this DDR4 DRAM module is the perfect solution. With its advanced features and innovative design, the MT40A2G8NRE-083E:B offers unmatched value, efficiency, and speed, making it the ideal choice for customers who demand the best. Elevate your computing experience with Micron Technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the DRAM, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and effort during assembly.

Operating Mode: SYNCHRONOUS

Offers fast and efficient data transfer, enhancing overall system performance.

Nominal Supply Voltage / Vsup (V): 1.2

Provides stable power delivery to the DRAM, ensuring reliable operation.

No. of Terminals: 78

Allows for seamless integration with other components in the system, enhancing compatibility.

Maximum Operating Temperature: 85 °C

Ensures reliable operation even in high-temperature environments, making it suitable for various applications.

Organization: 2GX8

Provides a good balance between capacity and speed, meeting the needs of demanding computing tasks.

Technology: CMOS

Offers low power consumption and high speed, making it energy-efficient and fast for data processing.

Memory IC Type: DDR4 DRAM

Utilizes the latest DDR4 technology for improved performance and efficiency in data storage and retrieval.

Technical Specifications

DRAM MT40A2G8NRE-083E:B attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

DUAL BANK PAGE BURST

Additional Features:

SELF REFRESH

JESD-30 Code:

R-PBGA-B78

Length:

12 mm

Memory Density:

17179869184 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

78

No. of Words:

2147483648 words

No. of Words Code:

2G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.26 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

MT40A2G8NRE-083E:B Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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