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IS42S32800J-7TLI

Integrated Silicon Solution

IS42S32800J-7TLI by Integrated Silicon Solution

IS42S32800J-7TLI by Integrated Silicon Solution is a 8MX32 Synchronous DRAM with 143 MHz clock frequency. Operating at 3.3V, it offers 4096 refresh cycles and supports four bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing capabilities.

Median Price

$8.930

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 115 parts In-Stock

1+ parts

$5.460

100+ parts

$4.190

1k+ parts

$3.990

10k+ parts

-

115

$5.460

$4.190

$3.990

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Chip1Stop

Japan . 108 parts In-Stock

1+ parts

$6.610

100+ parts

$5.970

1k+ parts

-

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108

$6.610

$5.970

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Newark

USA . 489 parts In-Stock

1+ parts

$9.430

100+ parts

$6.740

1k+ parts

$5.460

10k+ parts

-

489

$9.430

$6.740

$5.460

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DigiKey

USA . 147 parts In-Stock

1+ parts

$9.450

100+ parts

$8.317

1k+ parts

$7.633

10k+ parts

$7.440

147

$9.450

$8.317

$7.633

$7.440

Element14

Singapore . 597 parts In-Stock

1+ parts

$13.370

100+ parts

$11.010

1k+ parts

$10.820

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597

$13.370

$11.010

$10.820

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Avnet

USA . 2,376 parts In-Stock

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2,376

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Arrow

USA . 108 parts In-Stock

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$4.724

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108

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$4.724

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Verical

USA . 108 parts In-Stock

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-

100+ parts

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$8.930

10k+ parts

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108

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$8.930

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 25 parts In-Stock

1+ parts

$6.050

100+ parts

-

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25

$6.050

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Chip Stock

USA . 14,311 parts In-Stock

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14,311

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NAC Semi

USA . 648 parts In-Stock

1+ parts

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100+ parts

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$8.250

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648

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$8.250

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Vyrian

USA . 555 parts In-Stock

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555

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Sensible Micro Corp

USA . 448 parts In-Stock

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448

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ComSIT USA

USA . 42 parts In-Stock

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42

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Bristol Electronics

USA . 7 parts In-Stock

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7

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 196 parts In-Stock

1+ parts

$2.569

100+ parts

$2.440

1k+ parts

$2.440

10k+ parts

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196

$2.569

$2.440

$2.440

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Aztec Data Supply Inc.

USA . 815 parts In-Stock

1+ parts

$3.430

100+ parts

-

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815

$3.430

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Continental Prestige Electronics

USA . 315 parts In-Stock

1+ parts

$5.080

100+ parts

$4.020

1k+ parts

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315

$5.080

$4.020

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Corohmni

South Africa . 592 parts In-Stock

1+ parts

$5.463

100+ parts

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592

$5.463

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Lixinc

USA . 19,107 parts In-Stock

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19,107

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Argo Parts USA

USA . 2,511 parts In-Stock

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2,511

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GreenTree Electronics

Israel . 2,107 parts In-Stock

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2,107

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$5.929

1k+ parts

$5.748

10k+ parts

$5.627

2,000

-

$5.929

$5.748

$5.627

Eastek

USA . 703 parts In-Stock

1+ parts

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100+ parts

$6.090

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703

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$6.090

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Perfect Parts

USA . 617 parts In-Stock

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617

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Authorized Procurement Solutions

USA . 569 parts In-Stock

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569

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Overview

Get ready to elevate your electronic devices with the IS42S32800J-7TLI from Integrated Silicon Solution. As a leading manufacturer in the industry, ISS is known for delivering top-quality products that exceed expectations. This DRAM module offers seamless synchronous operation, self-refresh capabilities, and common input/output type for maximum efficiency. With a wide range of applications including industrial use, this product stands out with its high performance, reliability, and value. Upgrade your technology today with the IS42S32800J-7TLI and experience the difference ISS can make in your projects.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material is durable and lightweight, making it a reliable choice for a DRAM product.

Surface Mount:

YES - Allows for easy installation and reduces the overall size of the device, making it ideal for compact designs.

Package Shape:

RECTANGULAR - Provides a standardized form factor for easy integration into existing systems.

Operating Mode:

SYNCHRONOUS - Ensures data transfer is synchronized with the system clock, improving performance and efficiency.

Self Refresh:

YES - Allows for power savings during idle periods, extending battery life in mobile devices.

Nominal Supply Voltage / Vsup (V):

3.3 - Offers compatibility with a wide range of systems and reduces the risk of overloading circuits.

No. of Terminals:

86 - Provides ample connectivity options for interfacing with other components in a system.

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE - Saves space on the PCB and allows for a sleek, compact design.

Maximum Operating Temperature:

85 °C - Ensures reliable operation even in harsh environments with elevated temperatures.

Organization:

8MX32 - Offers high memory capacity and data bandwidth, suitable for demanding applications.

Output Characteristics:

3-STATE - Allows for multiple devices to share a common bus without interference, enhancing system flexibility.

Minimum Operating Temperature:

40 °C - Ensures the DRAM can function in cold temperatures without performance degradation.

Terminal Finish:

Tin (Sn) - Provides a reliable and cost-effective finish for the terminals, ensuring good connectivity.

Terminal Position:

DUAL - Allows for flexibility in mounting orientation and improves signal integrity.

Maximum Seated Height:

1.2 mm - Enables the DRAM to be installed in slim devices without compromising on memory capacity.

Maximum Clock Frequency (fCLK):

143 MHz - Supports high-speed data transfer, enhancing system responsiveness.

Width:

10.16 mm - Offers a compact form factor for easy integration in space-constrained applications.

Minimum Supply Voltage (Vsup):

3 V - Provides stable power delivery to the DRAM, ensuring reliable performance.

Maximum Time At Peak Reflow Temperature (s):

10 - Allows for efficient soldering processes during manufacturing.

Peak Reflow Temperature °C:

260 - Ensures the DRAM can withstand high-temperature soldering without damage.

Length:

22.22 mm - Provides a balanced form factor for optimal board layout and component placement.

Temperature Grade:

INDUSTRIAL - Suitable for use in industrial environments with varying temperature conditions.

Access Mode:

FOUR BANK PAGE BURST - Optimizes memory access for improved system performance and efficiency.

Technology:

CMOS - Offers low power consumption and high noise immunity, enhancing overall system reliability.

Terminal Form:

GULL WING - Facilitates easy soldering and inspection during the manufacturing process.

Maximum Supply Current:

170 mA - Ensures reliable power delivery to the DRAM for consistent performance.

No. of Words:

8388608 words - Provides a large storage capacity for data-intensive applications.

Sequential Burst Length:

1,2,4,8,FP - Supports flexible data transfer options, catering to different system requirements.

Memory Width:

32 - Offers a wide memory bus for high-speed data transfer, improving system performance.

Terminal Pitch:

0.5 mm - Provides a compact layout for efficient use of PCB real estate.

No. of Words Code:

8M - Indicates the high memory capacity of the DRAM, suitable for demanding applications.

Moisture Sensitivity Level (MSL):

3 - Allows for safe storage and handling of the DRAM in various environments.

Maximum Supply Voltage (Vsup):

3.6 V - Provides a safe operating range for the DRAM, protecting it from voltage spikes.

Memory Density:

268435456 bit - Offers a high-density storage solution for data-intensive applications.

Memory IC Type:

SYNCHRONOUS DRAM - Incorporates a specialized IC design for synchronized data transfer, enhancing system performance.

Maximum Standby Current:

0.004 Amp - Ensures low power consumption during standby mode, prolonging battery life.

Refresh Cycles:

4096 - Supports regular data refreshing to maintain the integrity of stored information.

Interleaved Burst Length:

1,2,4,8 - Optimizes data transfer efficiency for enhanced system performance.

Maximum Access Time:

5.4 ns - Provides fast access to stored data, reducing latency and improving system responsiveness.

Technical Specifications

DRAM IS42S32800J-7TLI attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

143 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G86

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

32

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

86

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX32

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP86,.46,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

260

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.004 Amp

Maximum Supply Current:

170 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Width:

10.16 mm

Trade Compliance

IS42S32800J-7TLI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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