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IS42S16160G-7BLI

Integrated Silicon Solution

IS42S16160G-7BLI by Integrated Silicon Solution

IS42S16160G-7BLI by Integrated Silicon Solution is a 16MX16 SYNCHRONOUS DRAM with 143 MHz clock frequency. It operates at 3.3V, has 54 terminals in a GRID ARRAY package style, and supports FOUR BANK PAGE BURST access mode. Ideal for industrial applications requiring high-speed memory performance.

Median Price

$14.520

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,588 parts In-Stock

1+ parts

$14.520

100+ parts

$12.120

1k+ parts

$11.940

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2,588

$14.520

$12.120

$11.940

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Distributors (In-Stock)

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DF Sales Co.

USA . 29 parts In-Stock

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$2.800

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29

$2.800

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DF Sales Co.

USA . 29 parts In-Stock

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$2.800

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29

$2.800

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Nova Conductors

Japan . 1,000 parts In-Stock

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$6.010

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$6.010

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Component Sense

UK . 4,104 parts In-Stock

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Vyrian

USA . 2,866 parts In-Stock

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2,866

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PC Components Company LLC

USA . 542 parts In-Stock

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542

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Bristol Electronics

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Atlantic Semiconductor

USA . 208 parts In-Stock

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R&J Components

USA . 196 parts In-Stock

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ComSIT Distribution GmbH

Germany . 80 parts In-Stock

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80

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ComSIT USA

USA . 80 parts In-Stock

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Rebound Electronics

UK . 7 parts In-Stock

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Classic Components Corporation

USA . 1 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,156 parts In-Stock

1+ parts

$2.544

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1,156

$2.544

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Andel Nordic

Denmark . 447 parts In-Stock

1+ parts

$3.923

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$3.766

10k+ parts

$3.766

447

$3.923

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$3.766

$3.766

Corohmni

South Africa . 4 parts In-Stock

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$5.766

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$5.766

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$5.939

100+ parts

$5.642

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$5.642

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100

$5.939

$5.642

$5.642

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Netroflash

USA . 2,000 parts In-Stock

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$6.010

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$6.010

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Continental Prestige Electronics

USA . 479 parts In-Stock

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$8.780

100+ parts

$6.490

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479

$8.780

$6.490

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Lixinc

USA . 16,479 parts In-Stock

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Argo Parts USA

USA . 3,653 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Perfect Parts

USA . 2,084 parts In-Stock

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Robosynatics

Brazil . 2,000 parts In-Stock

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$0.054

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$0.054

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$0.054

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$0.054

$0.054

$0.054

Lucentia Tech

USA . 2,000 parts In-Stock

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$0.054

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$0.054

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$0.054

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$0.054

$0.054

$0.054

iodParts Technologies Inc.

India . 757 parts In-Stock

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Kepictronics

USA . 101 parts In-Stock

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GreenTree Electronics

Israel . 50 parts In-Stock

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Overview

Looking for high-quality DRAM that offers exceptional performance and reliability? Look no further than the IS42S16160G-7BLI by Integrated Silicon Solution. With a focus on innovation and cutting-edge technology, ISS is a trusted manufacturer known for delivering top-notch products. This DRAM is perfect for a variety of applications, providing fast data access and efficient operation. Experience the value and benefits of this product, from its seamless synchronization to its low power consumption. Upgrade your system with the IS42S16160G-7BLI and enjoy superior performance like never before!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the DRAM, ensuring it can withstand various environmental conditions.

Surface Mount: YES

Allows for easy installation and space-saving on circuit boards.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures better performance and data transfer efficiency compared to asynchronous DRAM.

Nominal Supply Voltage / Vsup (V): 3.3

The low supply voltage helps in reducing power consumption and heat generation, making it energy efficient.

Maximum Clock Frequency (fCLK): 143 MHz

High clock frequency allows for fast data processing and is suitable for applications that require quick response times.

Technology: CMOS

CMOS technology provides low power consumption and high speed operation, making the DRAM energy efficient and reliable.

Maximum Access Time: 5.4 ns

Low access time ensures quick data retrieval and high-speed performance, making it ideal for demanding applications.

Technical Specifications

DRAM IS42S16160G-7BLI attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

143 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

S-PBGA-B54

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA54,9X9,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.004 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

130 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

8 mm

Trade Compliance

IS42S16160G-7BLI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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