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AS4C32M16D2A-25BCN

Alliance Memory

AS4C32M16D2A-25BCN by Alliance Memory

Alliance Memory's AS4C32M16D2A-25BCN is a 32MX16 Synchronous DRAM with 536870912-bit memory density. Operating at 1.8V, it offers fast access time of 0.4ns and features self-refresh mode. Ideal for applications requiring high-speed data processing in compact devices.

Median Price

$5.370

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 209 parts In-Stock

1+ parts

$3.360

100+ parts

$2.520

1k+ parts

$2.470

10k+ parts

-

209

$3.360

$2.520

$2.470

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DigiKey

USA . 1,166 parts In-Stock

1+ parts

$4.100

100+ parts

$3.620

1k+ parts

$3.116

10k+ parts

$2.962

1,166

$4.100

$3.620

$3.116

$2.962

Element14

Singapore . 209 parts In-Stock

1+ parts

$5.370

100+ parts

$4.260

1k+ parts

$4.050

10k+ parts

-

209

$5.370

$4.260

$4.050

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Mouser Electronics

USA . 393 parts In-Stock

1+ parts

$5.850

100+ parts

$5.040

1k+ parts

$4.760

10k+ parts

$4.640

393

$5.850

$5.040

$4.760

$4.640

Newark

USA . 336 parts In-Stock

1+ parts

$6.370

100+ parts

$3.920

1k+ parts

$3.190

10k+ parts

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336

$6.370

$3.920

$3.190

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Avnet

USA . 1,672 parts In-Stock

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1,672

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Distributors (In-Stock)

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TME

Poland . 144 parts In-Stock

1+ parts

$3.610

100+ parts

$2.940

1k+ parts

-

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144

$3.610

$2.940

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NAC Semi

USA . 10,868 parts In-Stock

1+ parts

-

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$3.030

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10,868

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-

$3.030

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Kruse Electronics AG

Switzerland . 10,535 parts In-Stock

1+ parts

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10,535

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ARCO, INC.

USA . 9,200 parts In-Stock

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9,200

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VNN

France . 2,981 parts In-Stock

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Kruse

Germany . 801 parts In-Stock

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801

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Vyrian

USA . 452 parts In-Stock

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452

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 1,272 parts In-Stock

1+ parts

$2.470

100+ parts

-

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1,272

$2.470

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Eastek

USA . 6,598 parts In-Stock

1+ parts

-

100+ parts

$3.590

1k+ parts

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10k+ parts

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6,598

-

$3.590

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GreenTree Electronics

Israel . 6,598 parts In-Stock

1+ parts

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6,598

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Continental Prestige Electronics

USA . 3,090 parts In-Stock

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3,090

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Bastille Electronics

Australia . 870 parts In-Stock

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870

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Microchip USA

USA . 870 parts In-Stock

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870

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Argo Parts USA

USA . 89 parts In-Stock

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89

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Overview

Discover the Alliance Memory AS4C32M16D2A-25BCN, a top-quality DRAM that offers high performance and reliability. With a focus on innovation and cutting-edge technology, Alliance Memory is a trusted manufacturer in the industry. This versatile memory module is ideal for a variety of applications, providing seamless operation and fast data access. Upgrade your systems with this advanced solution and experience enhanced efficiency and productivity. Trust Alliance Memory for top-notch quality and exceptional value in memory solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, making the product easy to handle and transport.

Surface Mount: YES

Easily mounted on circuit boards, saving space and simplifying the assembly process.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for efficient communication with other components, enhancing overall system performance.

Nominal Supply Voltage / Vsup (V): 1.8

Efficient power consumption at a moderate voltage level, reducing energy costs.

No. of Terminals: 84

Sufficient number of terminals for reliable connectivity and data transmission.

Maximum Operating Temperature: 85 °C

Wide temperature range tolerance for versatile usage in different environments.

Organization: 32MX16

Organized memory layout for optimized data storage and retrieval processes.

Technology: CMOS

Efficient and low-power consumption technology for enhanced performance and reduced energy use.

No. of Words: 33554432 words

Large memory capacity for storing vast amounts of data efficiently.

Memory Width: 16

Optimal memory width for fast data transfer speeds and seamless operation.

Memory IC Type: SYNCHRONOUS DRAM

High-performance memory IC type for improved system responsiveness and data processing capabilities.

Maximum Access Time: 0.4 ns

Swift access time for quick retrieval of data, enhancing overall system performance.

Technical Specifications

DRAM AS4C32M16D2A-25BCN attributes and parameters. Explore more DRAM devices from Alliance Memory

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

.4 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PBGA-B84

Length:

12.5 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

84

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.9 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

AS4C32M16D2A-25BCN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.28

SB

8542.32.00.15

PCN

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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