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IS42S16800F-6TL

Integrated Silicon Solution

IS42S16800F-6TL by Integrated Silicon Solution

IS42S16800F-6TL by Integrated Silicon Solution is a 8MX16 Synchronous DRAM with 166 MHz clock frequency. It operates at 3.3V, has 4096 refresh cycles, and supports common I/O type. Ideal for commercial applications requiring fast memory access and low standby current consumption.

Median Price

$3.460

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 315 parts In-Stock

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$3.460

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$2.210

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$2.210

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Avnet

USA . 216 parts In-Stock

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Nova Conductors

Japan . 900 parts In-Stock

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$2.512

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900

$2.512

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Chip Stock

USA . 18,500 parts In-Stock

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Vyrian

USA . 3,112 parts In-Stock

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NAC Semi

USA . 216 parts In-Stock

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$3.200

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North Shore Components

USA . 150 parts In-Stock

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Cyclops Electronics Ltd

UK . 87 parts In-Stock

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Continental Prestige Electronics

USA . 4,171 parts In-Stock

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$2.512

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$2.461

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$2.461

Argo Parts USA

USA . 2,903 parts In-Stock

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$2.512

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Aztec Data Supply Inc.

USA . 2,824 parts In-Stock

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$4.700

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Corohmni

South Africa . 184 parts In-Stock

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$5.133

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AZTECH Wire

Italy . 812 parts In-Stock

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$19.440

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RC Electronics

USA . 27,000 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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$2.461

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$2.386

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$2.336

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$2.336

Eastek

USA . 216 parts In-Stock

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$3.040

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GreenTree Electronics

Israel . 216 parts In-Stock

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ChipstoGo Electronic ltd

UK . 32 parts In-Stock

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Perfect Parts

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Overview

Discover unparalleled performance and reliability with the IS42S16800F-6TL by Integrated Silicon Solution. As a leading manufacturer of high-quality DRAM products, ISS offers cutting-edge technology for a wide range of applications. Experience seamless operation, fast data access, and efficient power management with this innovative memory solution. Elevate your systems with the superior value and benefits that ISS brings to customers. Choose the IS42S16800F-6TL for unmatched quality and performance in all your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the DRAM, ensuring long-term reliability.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and coordination, enhancing performance in data transfer.

Nominal Supply Voltage / Vsup (V): 3.3

Stable supply voltage ensures consistent performance and reliability of the DRAM.

Maximum Clock Frequency (fCLK): 166 MHz

High clock frequency allows for quick data access and processing, making this DRAM suitable for high-speed applications.

Memory IC Type: SYNCHRONOUS DRAM

Being synchronous DRAM, it offers efficient data transfer and access, making it a good choice for memory-intensive tasks.

Technical Specifications

DRAM IS42S16800F-6TL attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

166 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G54

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP54,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.002 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

120 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

IS42S16800F-6TL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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