Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
NT5CC128M16JR-EK by Nanya Technology is a DDR DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing in devices like smartphones, tablets, and networking equipment.
Median Price
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Suppliers In-Stock
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1k+
Chip Stock
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Classic Components Corporation
Cyclops Electronics Ltd
Component Sense
Vyrian
ComSIT Distribution GmbH
ComSIT USA
Bas Electronics GmbH & Co. KG
Sensible Micro Corp
Nova Conductors
Halfin
PC Components Company LLC
Bristol Electronics
Aztec Data Supply Inc.
$2.510
AZTECH Wire
$11.727
Formix International (Excess)
Infinite Electronics LLP (Excess)
RC Electronics
Futuretech Components
Kepictronics
Alle Elektronik GmbH
Perfect Parts
Authorized Procurement Solutions
Argo Parts USA
Bastille Electronics
Continental Prestige Electronics
The plastic/epoxy material used in the package body provides durability and protection to the DRAM, making it suitable for various applications.
The low nominal supply voltage of 1.35V helps in reducing power consumption, making it energy-efficient and cost-effective.
The synchronous operating mode allows for faster and more efficient data transfer between the DRAM and the processor, enhancing overall system performance.
The organization of 128MX16 means that the DRAM has a capacity of 128 megabytes with a data width of 16 bits, providing ample memory storage and speed for demanding applications.
The CMOS technology used in the DRAM ensures low power consumption, high speed, and reliability, making it a preferred choice for various electronic devices.
DRAM NT5CC128M16JR-EK attributes and parameters. Explore more DRAM devices from Nanya Technology
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NT5CC128M16JR-EK Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.36
SB
8542.32.00.23
Nanya Technology holds innovation as our core value which is realized in the company’s dedication to research and develop, design, manufacture, marketing, and sales of Dynamic Random Access Memory (DRAM). Nanya’s commitment to research and development has enabled the company to accumulate extensive DRAM expertise and intellectual property. As a true leader in corporate citizenship, Nanya has proactively implemented green manufacturing technology. Nanya has harnessed the power of artificial intelligence (AI) to significantly upgrade production capacity and efficiency. The result is a company that provides industry leading DRAM solutions in a way that is environmentally friendly to our planet
1N4148
Vishay Intertechnology
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Fairchild Semiconductor
2N2222A
Infineon Technologies
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BSS138
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Feedback Capacitance (Crss): 10 pF; JEDEC-95 Code: TO-236AB;
SMMBT2222ALT1G
Onsemi
SMMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, 0.6A IC, and 40V VCE. It has a hFE of 75, fT of 300MHz, and operates up to 150°C. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance.
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;
1N5819HW-7-F
Diodes Incorporated
1N5819HW-7-F by Diodes Inc. is a Schottky rectifier diode with 40V reverse test voltage, 1A output current, and 0.75V forward voltage. It's a surface mount device in a small outline package ideal for efficiency applications at temperatures ranging from -65 to 125°C.
Itt Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Rfe International
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Forward Voltage (VF): 1 V; Config: SINGLE;
1N4148WS
Sensitron Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/58-360
Fct Electronic
CONNECTOR ACCESSORY; IEC Conformity: NO; Alternate Contact Sources: MILITARY; MIL Conformity: YES; Contact Gender: MALE; MIL-Connector Accessory Name: CONTACT;
1N4148WT
Eic Semiconductor
Cobham Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 100; Maximum Turn Off Time (toff): 300 ns;
C1206C104M5RACTU
KEMET Corporation
KEMET C1206C104M5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125°C operating range, and ±20% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.
BAV99
Transys Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358MX
Texas Instruments
LM358MX by Texas Instruments is a dual operational amplifier with a max input offset voltage of 9000 uV. It has a nominal voltage of 5V and a min voltage gain of 15000. This op amp is commonly used in applications requiring amplification and signal conditioning.
SMBJ18CA
Lite-on Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Grande Electronics
BSS138-TP
Micro Commercial Components
BSS138-TP by Micro Commercial Components is a N-channel small signal FET with a min DS breakdown voltage of 50V and max drain current of 0.22A. It is commonly used in applications requiring enhancement mode operation, such as power management and switching circuits.
OPA2277UA
Burr-Brown Corporation
OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
K4B2G0846C-HCH9
Samsung
Samsung's K4B2G0846C-HCH9 DDR3 DRAM features 256MX8 organization, 667 MHz clock frequency, and 2147483648 bit memory density. Ideal for applications requiring high-speed data processing and storage in devices like computers and servers.
MT47H64M16NF-25EAIT:M
Micron Technology
Micron Technology's MT47H64M16NF-25EAIT:M is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics and industrial control systems.
IS42S16160J-7TLI
Integrated Silicon Solution
IS42S16160J-7TLI by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 3.3V supply voltage, operating at -40 to 85 °C. Ideal for industrial applications requiring fast access time of 5.4 ns and self-refresh capability in a small outline package.
MT41K512M16VRP-107IT:P
DRAMs; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;
MT53E128M32D2DS-046AAT:A
Micron Technology's MT53E128M32D2DS-046AAT:A is a LPDDR4 DRAM with 128MX32 organization, operating at 2133 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast clock frequency.
MT41K256M8DA-125:K
Micron Technology's MT41K256M8DA-125:K is a DDR3L DRAM with 256MX8 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access such as servers, workstations, and networking equipment.
AS4C256M16D3C-12BCN
Alliance Memory
Alliance Memory's AS4C256M16D3C-12BCN is a 256MX16 DDR3 DRAM with 800 MHz clock frequency, suitable for applications requiring high-speed synchronous operation. It features common I/O type, self-refresh capability, and operates at 1.5V supply voltage. Ideal for systems needing fast data access in compact form factors.
AS4C16M16SA-7BCN
Alliance Memory's AS4C16M16SA-7BCN is a 16MX16 Synchronous DRAM with 16777216 words. It operates at 143 MHz clock frequency, suitable for commercial applications. Featuring self-refresh and common I/O type, it offers fast access time of 5.4 ns for high-performance memory solutions.
MT48LC16M16A2P-6A:G
MT48LC16M16A2P-6A:G by Micron Technology is a 16MX16 SDRAM with 3.3V supply, 167MHz clock frequency, and 70°C operating temp. Ideal for commercial applications requiring high-speed memory access in a small outline package.
MT48LC8M16A2TG-75LIT:G
Micron Technology's MT48LC8M16A2TG-75LIT:G is a 3.3V Synchronous DRAM with 8MX16 organization, operating at 133MHz clock frequency. It features common I/O type, self-refresh mode, and industrial temperature grade. Ideal for applications requiring fast memory access and high data density in compact spaces.
EDB4432BBBJ-1DAIT-F
Micron Technology's EDB4432BBBJ-1DAIT-F is a PLASTIC/EPOXY DRAM with 128MX32 organization and 32-bit memory width. It operates synchronously, has self-refresh capability, and is suitable for industrial applications.
K4S641632K-UC75
Samsung's K4S641632K-UC75 is a 4MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability. Package style: small outline, thin profile, suitable for commercial temperature grade environments.
K4S561632E-TC75
Samsung's K4S561632E-TC75 is a 16MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
K4H561638H-UCB3
Samsung's K4H561638H-UCB3 DDR1 DRAM features 16MX16 organization, 166 MHz clock frequency, and 70°C operating temperature. Ideal for applications requiring high memory density and fast access times in commercial-grade devices.
MT46V64M8P-5B:J
Micron Technology's MT46V64M8P-5B:J is a DDR1 DRAM with 64MX8 organization, operating at 200 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
IS43TR16256AL-125KBL
IS43TR16256AL-125KBL by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast access times in a compact grid array package.
IS43DR16640B-25DBLI
IS43DR16640B-25DBLI by Integrated Silicon Solution is a 64MX16 DDR2 DRAM with a max clock frequency of 400 MHz. It operates in synchronous mode and has a memory density of 1073741824 bit. This DRAM is commonly used in industrial applications that require high-speed data storage and retrieval.
W631GU6NB-12
Winbond Electronics
W631GU6NB-12 by Winbond Electronics is a DDR3L DRAM with 64MX16 organization, operating at up to 800 MHz. It features a low supply voltage of 1.35V and offers a memory density of 1073741824 bits. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT46H32M16LFBF-6IT:CTR
Micron Technology's MT46H32M16LFBF-6IT:CTR is a DDR1 DRAM with 32MX16 organization, 536870912 bit memory density, and operates at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade. Ideal for applications requiring fast access times and high memory capacity in compact devices.
MT47H32M16NF-25EAIT:H
Micron Technology's MT47H32M16NF-25EAIT:H is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features a thin profile grid array package and common I/O type, suitable for industrial applications requiring high-speed synchronous memory with self-refresh capability.
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NT5CC256M16ER-EKI
Nanya Technology
NT5CC256M16ER-EKI by Nanya Technology is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for industrial applications requiring high memory density and reliable performance in a compact grid array package.
NT5CC128M16JR-EKI
NT5CC128M16JR-EKI by Nanya Technology is a DDR DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for industrial applications, this memory IC has a memory density of 2147483648 bits and operates in a temperature range from -40 to 95°C.
NT5CC256M16ER-EK
NT5CC256M16ER-EK by Nanya Technology is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and low power consumption in compact electronic devices.
NT5CC64M16GP-DII
NT5CC64M16GP-DII by Nanya Technology is a DDR3L DRAM with 64MX16 organization, operating at 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
NT5CC64M16GP-DIH
NT5CC64M16GP-DIH by Nanya Technology is a DDR3L DRAM with 64MX16 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
NT5CC64M16GP-DI
NT5CC64M16GP-DI by Nanya Technology is a DDR3L DRAM with 64MX16 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact devices like smartphones and tablets.
NT5CC256M16ER-EKA
NT5CC256M16ER-EKA by Nanya Technology is a DDR DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, multi-bank page burst access mode, and industrial temperature grade. Suitable for applications requiring high memory density and fast data processing in compact devices.
NT5CC256M16ER-EKH
NT5CC256M16ER-EKH by Nanya Technology is a DDR DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, multi-bank page burst access mode, and industrial temperature grade. Suitable for applications requiring high memory density and fast data processing in compact devices.
NT5CC64M16GP-DIT
DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
NT5CC256M16EP-EK
DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: VFBGA; Package Shape: RECTANGULAR; Width: 8 mm;
NT5CC128M16JR-EKT
DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.45 V;
NT5CC256M16EP-EKI
DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;
NT5CC256M16EP-EKT
NT5CC256M16EP-EKT by Nanya Technology is a DDR3L DRAM with 256MX16 organization and 4294967296 bit memory density. It operates at a voltage of 1.35V, has a temperature range of -40 to 95 °C, and is suitable for industrial applications.
NT5CC256M16CP-DI
NT5CC256M16CP-DI by Nanya Technology is a DDR3L DRAM with 256MX16 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact devices.
NT5CC256M16CP-DII
DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
NT5CC128M16BP-BF
DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: LFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
NT5CC128M16IP-DII
NT5CC128M16IP-DII by Nanya Technology is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It has a very thin profile and fine pitch package style, making it suitable for industrial applications requiring synchronous operation and multi-bank page burst access mode.
NT5CC128M16IP-EK
NT5CC128M16IP-DIT
NT5CC128M16JR-DI
DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Self Refresh: YES;
Supply Digital Components
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