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MT4C4001JDJ-6

Micron Technology

MT4C4001JDJ-6 by Micron Technology

Micron Technology's MT4C4001JDJ-6 is a 1MX4 DRAM with 1048576 words, 60ns access time, and 4194304-bit memory density. It is used in fast page applications requiring common I/O type and operates at a nominal voltage of 5V.

Median Price

$12.560

Lifecycle Status

Suppliers In-Stock

29

In-Stock Inventory

1k+

Distributors (In-Stock)

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Freelance Electronics

USA . 2 parts In-Stock

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$6.210

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$6.210

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DF Sales Co.

USA . 578 parts In-Stock

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$12.560

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578

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DF Sales Co.

USA . 578 parts In-Stock

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$12.560

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578

$12.560

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Forefront Electronics and Design

USA . 3 parts In-Stock

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$24.500

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Chip Stock

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Q Components

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Cyclops Electronics Ltd

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Prism Electronics

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Digiode

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Vyrian

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J & M Industries LLC

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EMSNET

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Semi Source

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Classic Components Corporation

USA . 296 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 250 parts In-Stock

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PC Components Company LLC

USA . 110 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 80 parts In-Stock

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LWI Electronics Inc

India . 75 parts In-Stock

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NexGen Digital

USA . 73 parts In-Stock

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Nova Conductors

Japan . 72 parts In-Stock

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ComSIT Distribution GmbH

Germany . 69 parts In-Stock

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Electronic Expediters

USA . 34 parts In-Stock

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MRC Electronics

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Electronics Depot

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Inland Empire Components Inc.

USA . 18 parts In-Stock

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Legend Electronics Inc.

USA . 16 parts In-Stock

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Bristol Electronics

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Atlantic Semiconductor

USA . 7 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 3 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,592 parts In-Stock

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$17.000

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Perfect Parts

USA . 6,702 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,273 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 1,595 parts In-Stock

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Argo Parts USA

USA . 1,434 parts In-Stock

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Continental Prestige Electronics

USA . 1,339 parts In-Stock

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Corphita

USA . 673 parts In-Stock

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Kepictronics

USA . 527 parts In-Stock

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527

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Overview

Experience unparalleled performance and reliability with the MT4C4001JDJ-6 by Micron Technology. As a leading manufacturer in the industry, Micron delivers cutting-edge DRAM technology that is perfect for a variety of applications. Whether you're looking to upgrade your system's memory or enhance its speed, this product offers exceptional value and benefits. Trust in Micron's quality craftsmanship and innovative solutions to take your projects to the next level. Elevate your performance with the MT4C4001JDJ-6 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/epoxy material provides durability and protection for the DRAM, ensuring a longer lifespan.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster data access and transfer speeds, improving overall performance.

Nominal Supply Voltage / Vsup (V): 5

Stable supply voltage of 5V allows for consistent and reliable operation of the DRAM.

No. of Terminals: 20

Having 20 terminals allows for easy integration and connectivity within various electronic devices.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures that the DRAM can operate within normal temperature ranges commonly found in commercial settings.

Technical Specifications

DRAM MT4C4001JDJ-6 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

60 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-J20

JESD-609 Code:

e0

Length:

17.17 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

20

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX4

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOJ

Package Equivalence Code:

SOJ20/26,.34

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

3.61 mm

Self Refresh:

NO

Maximum Standby Current:

.001 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

110 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

7.67 mm

Trade Compliance

MT4C4001JDJ-6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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