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MT4C4M4B1DJ-8TR

Micron Technology

MT4C4M4B1DJ-8TR by Micron Technology

MT4C4M4B1DJ-8TR by Micron Technology is a 4MX4 DRAM with 3-STATE output, operating at 5V. It features FAST PAGE access mode, 80ns max access time, and 2048 refresh cycles. Ideal for commercial applications requiring high memory density and fast data retrieval in small outline packages.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 803 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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803

-

-

-

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Digiode

USA . 760 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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760

-

-

-

-

Nova Conductors

Japan . 83 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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83

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,422 parts In-Stock

1+ parts

$28.000

100+ parts

-

1k+ parts

-

10k+ parts

-

1,422

$28.000

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-

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Continental Prestige Electronics

USA . 3,692 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,692

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-

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Argo Parts USA

USA . 3,517 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,517

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-

-

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Corphita

USA . 1,464 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,464

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Aranea Global

USA . 100 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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100

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-

Overview

Experience unparalleled performance and reliability with the MT4C4M4B1DJ-8TR by Micron Technology. As a leading manufacturer in the industry, Micron Technology delivers high-quality DRAM products that are perfect for a wide range of applications. From boosting the speed of your computer to enhancing the efficiency of your network devices, this product offers exceptional value and benefits. Trust in Micron Technology to provide you with cutting-edge technology that will elevate your business operations to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and cost-effective solution for housing the components of the DRAM product.

Surface Mount: YES

Easy to install and saves space on the PCB, making it convenient for integration into various electronic devices.

Operating Mode: ASYNCHRONOUS

Allows for independent operations and data transfer, enhancing the flexibility and efficiency of the DRAM product.

Nominal Supply Voltage / Vsup (V): 5

Offers a stable power supply for the DRAM ensuring reliable performance under standard operating conditions.

No. of Terminals: 24

Sufficient number of terminals for connecting the DRAM to other components, facilitating seamless communication within the system.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high-speed data processing, making it energy-efficient and high-performing.

Memory IC Type: FAST PAGE DRAM

Utilizes fast page mode for efficient memory access, reducing latency and improving overall system performance.

Technical Specifications

DRAM MT4C4M4B1DJ-8TR attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

80 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

JESD-30 Code:

R-PDSO-J24

Length:

18.44 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

24

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4MX4

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOJ

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

3.66 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

10.21 mm

Trade Compliance

MT4C4M4B1DJ-8TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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