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MTA18ASF4G72HZ-3G2F1

Micron Technology

MTA18ASF4G72HZ-3G2F1 by Micron Technology

Micron Technology's MTA18ASF4G72HZ-3G2F1 is a DDR4 DRAM module with 4GX72 organization, operating at 1612.9 MHz. It features synchronous operation, self-refresh capability, and a common I/O type. Ideal for high-performance computing applications requiring fast data processing and storage.

Median Price

$246.533

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 37 parts In-Stock

1+ parts

$232.030

100+ parts

$223.470

1k+ parts

-

10k+ parts

-

37

$232.030

$223.470

-

-

Element14

Singapore . 82 parts In-Stock

1+ parts

$239.062

100+ parts

-

1k+ parts

-

10k+ parts

-

82

$239.062

-

-

-

Farnell

UK . 82 parts In-Stock

1+ parts

$254.004

100+ parts

-

1k+ parts

-

10k+ parts

-

82

$254.004

-

-

-

DigiKey

USA . 1 parts In-Stock

1+ parts

$1,325.560

100+ parts

-

1k+ parts

-

10k+ parts

-

1

$1,325.560

-

-

-

Verical

USA . 400 parts In-Stock

1+ parts

-

100+ parts

$159.705

1k+ parts

-

10k+ parts

-

400

-

$159.705

-

-

Avnet

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$1,188.980

1k+ parts

$1,040.358

10k+ parts

$992.798

100

-

$1,188.980

$1,040.358

$992.798

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,615 parts In-Stock

1+ parts

$219.232

100+ parts

-

1k+ parts

-

10k+ parts

-

1,615

$219.232

-

-

-

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$250.900

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$250.900

-

-

-

NAC Semi

USA . 4 parts In-Stock

1+ parts

$314.200

100+ parts

-

1k+ parts

-

10k+ parts

-

4

$314.200

-

-

-

Chip Stock

USA . 15,200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,200

-

-

-

-

Sensible Micro Corp

USA . 9,291 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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9,291

-

-

-

-

Vyrian

USA . 2,970 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,970

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 57,565 parts In-Stock

1+ parts

$4.340

100+ parts

-

1k+ parts

-

10k+ parts

-

57,565

$4.340

-

-

-

Corohmni

South Africa . 273 parts In-Stock

1+ parts

$4.591

100+ parts

-

1k+ parts

-

10k+ parts

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273

$4.591

-

-

-

AZTECH Wire

Italy . 738 parts In-Stock

1+ parts

$5.306

100+ parts

-

1k+ parts

-

10k+ parts

-

738

$5.306

-

-

-

Ampacity Inc.

Singapore . 112 parts In-Stock

1+ parts

$135.750

100+ parts

-

1k+ parts

-

10k+ parts

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112

$135.750

-

-

-

Continental Prestige Electronics

USA . 93 parts In-Stock

1+ parts

$149.720

100+ parts

-

1k+ parts

-

10k+ parts

-

93

$149.720

-

-

-

Corphita

USA . 1,987 parts In-Stock

1+ parts

$207.693

100+ parts

-

1k+ parts

-

10k+ parts

-

1,987

$207.693

-

-

-

Netroflash

USA . 50 parts In-Stock

1+ parts

$250.900

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$250.900

-

-

-

Argo Parts USA

USA . 4,116 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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4,116

-

-

-

-

Overview

Enhance your system's performance with the MTA18ASF4G72HZ-3G2F1 by Micron Technology. As a leading manufacturer in the industry, Micron Technology ensures top-notch quality and reliability. This DRAM module is versatile and can be applied in various fields, offering seamless operation in synchronous mode with self-refresh capabilities. With a nominal supply voltage of 1.2V and common input/output type, this product provides exceptional value and benefits to customers seeking improved system efficiency and speed. Upgrade your device today with Micron's cutting-edge technology.

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular shape allows for easy installation and compatibility with standard electronic components.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and synchronization with other components, enhancing overall system performance.

Self Refresh: YES

Self-refresh capability ensures stable operation and data retention even during power interruptions or fluctuations.

Nominal Supply Voltage / Vsup (V): 1.2

Low supply voltage of 1.2V helps in reducing power consumption and heat generation, making it energy-efficient.

No. of Terminals: 260

Higher number of terminals allow for increased data transfer rates and greater bandwidth, contributing to faster performance.

Maximum Clock Frequency (fCLK): 1612.9 MHz

High clock frequency enables faster data processing and execution, ideal for demanding computing tasks and applications.

Memory IC Type: DDR4 DRAM MODULE

DDR4 technology offers improved speed, efficiency, and capacity compared to previous generations, enhancing overall system performance.

Technical Specifications

DRAM MTA18ASF4G72HZ-3G2F1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

DUAL BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH; WD-MAX

Maximum Clock Frequency (fCLK):

1612.9 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-XZMA-N260

Length:

69.6 mm

Memory Density:

309237645312 bit

Memory IC Type:

Memory Width:

72

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

260

No. of Words:

4294967296 words

No. of Words Code:

4G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4GX72

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Maximum Seated Height:

30.15 mm

Self Refresh:

YES

Maximum Standby Current:

.684 Amp

Maximum Supply Current:

1845 mA

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

NO

Technology:

CMOS

Terminal Form:

NO LEAD

Terminal Position:

ZIG-ZAG

Width:

3.7 mm

Trade Compliance

MTA18ASF4G72HZ-3G2F1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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