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MT47H64M16HR-25EIT:HTR

Micron Technology

MT47H64M16HR-25EIT:HTR by Micron Technology

Micron Technology's MT47H64M16HR-25EIT:HTR is a DDR2 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density, fast access time of 0.4ns, and multi-bank page burst access mode.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,937 parts In-Stock

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Chip Stock

USA . 1,075 parts In-Stock

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Digiode

USA . 647 parts In-Stock

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647

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Nova Conductors

Japan . 150 parts In-Stock

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Lantek

USA . 7 parts In-Stock

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Andel Nordic

Denmark . 50 parts In-Stock

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$2.626

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-

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$2.521

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$2.521

50

$2.626

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$2.521

$2.521

Corohmni

South Africa . 418 parts In-Stock

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$3.112

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Aztec Data Supply Inc.

USA . 254 parts In-Stock

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$4.590

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$4.590

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AZTECH Wire

Italy . 424 parts In-Stock

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$10.673

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$10.673

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Semicontronic

India . 1,611 parts In-Stock

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$26.000

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$25.350

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$25.220

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$26.000

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Ampacity Inc.

Singapore . 519 parts In-Stock

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$26.000

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Perfect Parts

USA . 36,198 parts In-Stock

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Argo Parts USA

USA . 4,592 parts In-Stock

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Continental Prestige Electronics

USA . 3,884 parts In-Stock

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Corphita

USA . 2,496 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,386 parts In-Stock

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Microchip USA

USA . 454 parts In-Stock

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Bastille Electronics

Australia . 50 parts In-Stock

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GreenTree Electronics

Israel . 50 parts In-Stock

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Overview

Experience unparalleled performance and reliability with Micron Technology's MT47H64M16HR-25EIT:HTR DDR2 DRAM. This high-quality memory module offers a wide range of applications, from industrial to consumer electronics. With a nominal supply voltage of 1.8V and self-refresh capabilities, this DRAM provides optimized power efficiency and seamless operation. Say goodbye to performance bottlenecks and hello to faster data processing with Micron Technology's cutting-edge technology. Upgrade your system today and enjoy the benefits of superior memory performance.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - offers durability and cost-effectiveness.

Surface Mount

YES - allows for easy and efficient installation on circuit boards.

Package Shape

RECTANGULAR - standard shape for compatibility with various devices.

Operating Mode

SYNCHRONOUS - ensures synchronized data transfer for optimal performance.

Nominal Supply Voltage (Vsup)

1.8V - energy-efficient operation for reduced power consumption.

No. of Terminals

84 - provides a sufficient number of connections for reliable functionality.

Package Style

GRID ARRAY, THIN PROFILE, FINE PITCH - compact design for space-saving installations.

Maximum Operating Temperature

85 °C - can withstand high temperatures in industrial environments.

Organization

64MX16 - offers a large memory capacity for storing a vast amount of data.

Minimum Operating Temperature

40 °C - suitable for use in extreme cold conditions.

Terminal Finish

TIN SILVER COPPER - corrosion-resistant coating for long-lasting performance.

Terminal Position

BOTTOM - allows for secure connections to the circuit board.

Maximum Seated Height

1.2 mm - low profile design for slim devices.

Width

8 mm - fits easily into compact electronic devices.

Minimum Supply Voltage (Vsup)

1.7V - ensures stable operation even at low voltages.

Maximum Time At Peak Reflow Temperature

30s - can withstand high temperatures during manufacturing processes.

Peak Reflow Temperature

260C - suitable for lead-free soldering techniques.

Length

12.5 mm - ideal size for a range of electronic applications.

Temperature Grade

INDUSTRIAL - designed for reliable operation in harsh industrial environments.

Access Mode

MULTI BANK PAGE BURST - allows for efficient data access and transfer.

Technology

CMOS - offers high-speed performance and energy efficiency.

Terminal Form

BALL - ensures secure and reliable connections.

No. of Words

67108864 words - provides a large memory capacity for storing diverse data.

Memory Width

16 - offers a wide data path for faster data transfer.

Terminal Pitch

0.8 mm - precise spacing for accurate connection with the circuit board.

No. of Words Code

64M - indicates the memory capacity in a concise code.

Moisture Sensitivity Level (MSL)

3 - can withstand moderate exposure to moisture.

Maximum Supply Voltage (Vsup)

1.9V - operates within a safe voltage range for reliable performance.

Memory Density

1073741824 bit - high memory density for storing a large amount of data.

Memory IC Type

DDR2 DRAM - a reliable and widely used memory type for various applications.

Maximum Access Time

0.4 ns - provides quick access to stored data for efficient performance.

Technical Specifications

DRAM MT47H64M16HR-25EIT:HTR attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

MULTI BANK PAGE BURST

Maximum Access Time:

.4 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PBGA-B84

JESD-609 Code:

e1

Length:

12.5 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

84

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.9 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

8 mm

Trade Compliance

MT47H64M16HR-25EIT:HTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.32

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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