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MTA18ASF2G72PZ-3G2J3

Micron Technology

MTA18ASF2G72PZ-3G2J3 by Micron Technology

Micron Technology's MTA18ASF2G72PZ-3G2J3 is a DDR4 DRAM MODULE with 2GX72 organization, operating at up to 1600 MHz clock frequency. It features a memory density of 154618822656 bits and is suitable for applications requiring high-speed synchronous memory access in servers or data centers.

Median Price

$86.335

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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cdw.com

USA . 51 parts In-Stock

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$66.990

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directmacro.com

USA . 30 parts In-Stock

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$105.680

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Digiode

USA . 2,328 parts In-Stock

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Vyrian

USA . 1,922 parts In-Stock

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Chip Stock

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Nova Conductors

Japan . 150 parts In-Stock

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AZTECH Wire

Italy . 244 parts In-Stock

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$9.380

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Ampacity Inc.

Singapore . 615 parts In-Stock

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$11.000

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Infinite Electronics LLP (Excess)

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Argo Parts USA

USA . 1,795 parts In-Stock

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Continental Prestige Electronics

USA . 1,034 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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Corphita

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Overview

Elevate your system's performance with the MTA18ASF2G72PZ-3G2J3 by Micron Technology. As a leading manufacturer in the industry, Micron delivers top-notch quality and reliability in their DRAM products. This rectangular-shaped module operates synchronously with self-refresh capabilities, making it ideal for a wide range of applications. With a nominal supply voltage of 1.2V and a memory density of 154618822656 bits, this DDR4 DRAM module offers unmatched value and efficiency. Upgrade your system today with Micron's cutting-edge technology.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape allows for easy installation and efficient use of space in electronic devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures accurate and coordinated data transfer, leading to improved performance.

Self Refresh: YES

Self-refresh capability allows for power savings and improved energy efficiency.

Nominal Supply Voltage / Vsup (V): 1.2

Low supply voltage of 1.2V helps in reducing power consumption and heat generation.

No. of Terminals: 288

Higher number of terminals provide more connectivity options and flexibility in device design.

Maximum Operating Temperature: 95 °C

High maximum operating temperature tolerance ensures reliable performance even under demanding conditions.

Organization: 2GX72

Organized into 2G words with each word having 72 bits, allowing for efficient data storage and retrieval.

Maximum Clock Frequency (fCLK): 1600 MHz

High maximum clock frequency enables fast data transfer rates and responsive system performance.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing overall efficiency.

Memory IC Type: DDR4 DRAM MODULE

Utilizing DDR4 technology ensures high-speed data processing and reliable memory performance.

Technical Specifications

DRAM MTA18ASF2G72PZ-3G2J3 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

SINGLE BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH; WD-MAX

Maximum Clock Frequency (fCLK):

1600 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

8

JESD-30 Code:

R-XDMA-N288

Length:

133.35 mm

Memory Density:

154618822656 bit

Memory IC Type:

Memory Width:

72

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

288

No. of Words:

2147483648 words

No. of Words Code:

2G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2GX72

Output Characteristics:

OPEN-DRAIN

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

DIMM288,33

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Maximum Seated Height:

31.4 mm

Self Refresh:

YES

Sequential Burst Length:

8

Maximum Supply Voltage (Vsup):

1.26 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

MTA18ASF2G72PZ-3G2J3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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