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MTA18ADF2G72AZ-3G2E1

Micron Technology

MTA18ADF2G72AZ-3G2E1 by Micron Technology

Micron's MTA18ADF2G72AZ-3G2E1 DDR DRAM Module features 2GX72 organization, 154618822656-bit memory density, and operates at 1.2V. Ideal for applications requiring high-speed synchronous memory with dual bank page burst access mode in microelectronic assemblies.

Median Price

$71.820

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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insight.com

USA . 34 parts In-Stock

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$65.990

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eBay

USA . 54 parts In-Stock

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$69.000

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Walmart

USA . 105 parts In-Stock

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$74.640

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cdw.com

USA . 29 parts In-Stock

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$128.990

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Chip Stock

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Vyrian

USA . 8,535 parts In-Stock

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Digiode

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Nova Conductors

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AZTECH Wire

Italy . 576 parts In-Stock

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$12.890

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Argo Parts USA

USA . 3,723 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Corphita

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Continental Prestige Electronics

USA . 1,021 parts In-Stock

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Overview

Enhance your device's performance with the MTA18ADF2G72AZ-3G2E1 from Micron Technology. As a leading manufacturer in the industry, Micron's DRAM modules are known for their superior quality and reliability. This rectangular synchronous module offers seamless self-refresh capabilities, making it ideal for a wide range of applications. Experience faster speeds and improved multitasking abilities without compromising on power efficiency. Upgrade your system today and enjoy the benefits of cutting-edge technology with Micron's MTA18ADF2G72AZ-3G2E1.

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient stacking and organization in electronic devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and coordination with the system, leading to improved overall performance.

Self Refresh: YES

Self-refresh capability helps in conserving power and maintaining data integrity during idle periods.

Nominal Supply Voltage / Vsup (V): 1.2

The moderate supply voltage of 1.2V balances power efficiency and performance in the product.

No. of Terminals: 288

Having 288 terminals allows for efficient connectivity and data transfer within the system.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

The microelectronic assembly style provides compactness and reliability in the product design.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, the product can withstand demanding usage conditions.

Organization: 2GX72

The 2GX72 organization offers a good balance between capacity and access speed in the product.

Minimum Operating Temperature: 0 °C

The minimum operating temperature of 0°C ensures reliable performance even in colder environments.

Terminal Position: DUAL

The dual terminal position allows for enhanced connectivity options and flexibility in system integration.

Maximum Seated Height: 18.9 mm

The maximum seated height of 18.9mm ensures compatibility with various device configurations.

Width: 3.9 mm

The compact width of 3.9mm enables easy installation and space-saving design in electronic systems.

Minimum Supply Voltage (Vsup): 1.14 V

The low minimum supply voltage of 1.14V helps in optimizing power consumption and efficiency.

Length: 133.35 mm

The length of 133.35mm provides sufficient capacity and storage capability in the product.

Access Mode: DUAL BANK PAGE BURST

The dual bank page burst access mode enhances data retrieval speed and efficiency in the product.

Technology: CMOS

CMOS technology ensures low power consumption, high speed, and reliability in the product.

Terminal Form: NO LEAD

The no-lead terminal form reduces environmental impact and improves soldering reliability in the product.

No. of Words: 2147483648 words

Having a high number of words allows for extensive data storage and processing capabilities in the product.

Memory Width: 72

A memory width of 72 bits enables efficient data transfer and processing in the product.

No. of Words Code: 2G

The 2G code signifies a high capacity and performance level in the product.

Maximum Supply Voltage (Vsup): 1.26 V

The maximum supply voltage of 1.26V provides a safety margin for reliable operation and protection.

Memory Density: 154618822656 bit

The high memory density of 154618822656 bits offers ample storage capacity for data-intensive applications.

Memory IC Type: DDR DRAM MODULE

Being a DDR DRAM module, the product ensures high-speed data transfer and processing capabilities for demanding tasks.

Technical Specifications

DRAM MTA18ADF2G72AZ-3G2E1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

DUAL BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH; WD-MAX

JESD-30 Code:

R-XDMA-N288

Length:

133.35 mm

Memory Density:

154618822656 bit

Memory IC Type:

Memory Width:

72

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

288

No. of Words:

2147483648 words

No. of Words Code:

2G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2GX72

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Maximum Seated Height:

18.9 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.26 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

MTA18ADF2G72AZ-3G2E1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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