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MTA8ATF1G64HZ-3G2J1

Micron Technology

MTA8ATF1G64HZ-3G2J1 by Micron Technology

Micron Technology's MTA8ATF1G64HZ-3G2J1 DDR DRAM MODULE features 1GX64 organization, 64-bit memory width, and 1073741824 words capacity. Operating in synchronous mode with self-refresh capability at a voltage range of 1.14V to 1.26V, it is ideal for applications requiring high-speed data processing and storage in microelectronic assemblies.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 13,700 parts In-Stock

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13,700

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Vyrian

USA . 6,453 parts In-Stock

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6,453

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Digiode

USA . 1,105 parts In-Stock

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1,105

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Nova Conductors

Japan . 45 parts In-Stock

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45

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 765 parts In-Stock

1+ parts

$15.820

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765

$15.820

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Argo Parts USA

USA . 4,349 parts In-Stock

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4,349

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Corphita

USA . 1,818 parts In-Stock

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1,818

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Continental Prestige Electronics

USA . 1,651 parts In-Stock

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1,651

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Aranea Global

USA . 500 parts In-Stock

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500

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Overview

Enhance your electronic devices with the MTA8ATF1G64HZ-3G2J1 DDR DRAM MODULE from Micron Technology. With a reputation for top-notch quality and innovation, Micron Technology delivers cutting-edge memory solutions for a wide range of applications. This high-performance memory module offers seamless operation and reliability, ensuring smooth multitasking and faster data processing. Upgrade your system with the MTA8ATF1G64HZ-3G2J1 and experience enhanced performance like never before.

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration and installation into various devices and systems.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and coordination of data transfer, leading to increased efficiency and reliability.

Self Refresh: YES

Self refresh capability helps to conserve power and prolong battery life in devices where this DRAM is used.

Nominal Supply Voltage / Vsup (V): 1.2

The 1.2V supply voltage strikes a good balance between performance and power efficiency, making it suitable for a wide range of applications.

No. of Terminals: 260

With 260 terminals, this DRAM module offers high connectivity and compatibility with various systems and devices.

Maximum Operating Temperature: 95 °C

The high maximum operating temperature tolerance of 95°C ensures reliable performance even in demanding conditions.

Organization: 1GX64

Organized as 1GX64, this DRAM module provides a high capacity of data storage (1GB) with a 64-bit memory width for efficient data processing.

Width: 3.7 mm

The compact width of 3.7mm allows for space-efficient installation in devices with limited space constraints.

Memory Width: 64

With a 64-bit memory width, this DRAM module can handle data in larger chunks, improving overall performance and data transfer speeds.

Technical Specifications

DRAM MTA8ATF1G64HZ-3G2J1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

SINGLE BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH; WD-MAX

JESD-30 Code:

R-XDMA-N260

Length:

69.6 mm

Memory Density:

68719476736 bit

Memory IC Type:

Memory Width:

64

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

260

No. of Words:

1073741824 words

No. of Words Code:

1G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1GX64

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Maximum Seated Height:

30.13 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.26 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Width:

3.7 mm

Trade Compliance

MTA8ATF1G64HZ-3G2J1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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