Loading...

MT46V32M16CV-5BIT:J

Micron Technology

MT46V32M16CV-5BIT:J by Micron Technology

MT46V32M16CV-5BIT:J by Micron Technology is a 32MX16 DDR1 DRAM with 536870912 bit memory density. It operates at 200 MHz clock frequency, has 3-STATE output characteristics, and supports FOUR BANK PAGE BURST access mode. Ideal for industrial applications requiring fast data processing and high memory capacity.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,426 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,426

-

-

-

-

Digiode

USA . 2,481 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,481

-

-

-

-

Nova Conductors

Japan . 550 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

550

-

-

-

-

LIBRA Elektronik GmbH

Germany . 139 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

139

-

-

-

-

Sogenti Electronics

Canada . 5 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 338 parts In-Stock

1+ parts

$2.954

100+ parts

-

1k+ parts

-

10k+ parts

-

338

$2.954

-

-

-

Andel Nordic

Denmark . 5,871 parts In-Stock

1+ parts

$4.950

100+ parts

-

1k+ parts

$4.752

10k+ parts

$4.752

5,871

$4.950

-

$4.752

$4.752

Semicontronic

India . 1,093 parts In-Stock

1+ parts

$18.000

100+ parts

$17.550

1k+ parts

$17.460

10k+ parts

-

1,093

$18.000

$17.550

$17.460

-

AZTECH Wire

Italy . 757 parts In-Stock

1+ parts

$18.464

100+ parts

-

1k+ parts

-

10k+ parts

-

757

$18.464

-

-

-

Ampacity Inc.

Singapore . 708 parts In-Stock

1+ parts

$27.000

100+ parts

-

1k+ parts

-

10k+ parts

-

708

$27.000

-

-

-

Continental Prestige Electronics

USA . 801 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

801

-

-

-

-

Corphita

USA . 268 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

268

-

-

-

-

Microchip USA

USA . 178 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

178

-

-

-

-

Bastille Electronics

Australia . 120 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

120

-

-

-

-

Argo Parts USA

USA . 81 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

81

-

-

-

-

Overview

Experience the power of Micron Technology with the MT46V32M16CV-5BIT:J DDR1 DRAM memory IC. Designed for industrial-grade applications, this high-quality memory module offers reliable performance at a competitive price point. With a maximum clock frequency of 200 MHz and a memory density of 536870912 bits, the MT46V32M16CV-5BIT:J is perfect for a wide range of digital devices and systems. Trust Micron Technology to provide cutting-edge memory solutions that meet your needs and exceed your expectations. Unlock the potential of your technology with Micron's DDR1 DRAM memory ICs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the product.

Surface Mount: YES

Surface mount technology makes the product easy to install and saves space on the circuit board.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for higher data transfer rates and efficient performance.

Nominal Supply Voltage / Vsup (V): 2.6

The 2.6V supply voltage provides efficient power consumption and optimal performance.

Maximum Clock Frequency (fCLK): 200 MHz

The high maximum clock frequency ensures fast processing speed and performance.

Technology: CMOS

The CMOS technology used in the product ensures low power consumption and high speed operation.

Memory IC Type: DDR1 DRAM

The use of DDR1 DRAM technology ensures high data transfer rates and reliable performance.

Technical Specifications

DRAM MT46V32M16CV-5BIT:J attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

.7 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

200 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

2,4,8

JESD-30 Code:

R-PBGA-B60

JESD-609 Code:

e0

Length:

12.5 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

60

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA60,9X12,40/32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Peak Reflow Temperature (C):

235

Power Supplies (V):

2.6

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

2,4,8

Maximum Standby Current:

.005 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

230 mA

Maximum Supply Voltage (Vsup):

2.7 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

2.6

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead/Silver (Sn/Pb/Ag)

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

8 mm

Trade Compliance

MT46V32M16CV-5BIT:J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.28

SB

8542.32.00.15

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20