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MT8D432M-6X

Micron Technology

MT8D432M-6X by Micron Technology

MT8D432M-6X by Micron Technology is a 4MX32 EDO DRAM MODULE with 32 memory width and 134217728 bit memory density. It operates at 5V, has a max access time of 60ns, and uses FAST PAGE WITH EDO access mode. Ideal for commercial applications requiring high-speed data processing in microelectronic assemblies.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 20,900 parts In-Stock

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Digiode

USA . 2,136 parts In-Stock

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Vyrian

USA . 1,323 parts In-Stock

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Nova Conductors

Japan . 70 parts In-Stock

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70

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New Tech Sourcing

USA . 9 parts In-Stock

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A2Z Electronics, Inc.

USA . 1 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 1 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,006 parts In-Stock

1+ parts

$16.000

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1,006

$16.000

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Argo Parts USA

USA . 4,666 parts In-Stock

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Continental Prestige Electronics

USA . 2,463 parts In-Stock

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Corphita

USA . 2,063 parts In-Stock

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2,063

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Aranea Global

USA . 100 parts In-Stock

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Perfect Parts

USA . 41 parts In-Stock

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Overview

Unlock the power of reliable and high-performance computing with the MT8D432M-6X by Micron Technology. As a leading manufacturer in the industry, Micron delivers top-quality DRAM modules that are perfect for a wide range of applications. Whether you're a gamer looking to enhance your system's speed or a professional needing seamless multitasking capabilities, this product offers unmatched value, benefits, and advantages. Trust Micron Technology to provide you with the superior performance you need to take your computing experience to the next level.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape allows for easy installation and compatibility with standard mounting configurations.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexibility in timing and data transfer, making it suitable for a variety of applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard supply voltage of 5V ensures compatibility with a wide range of systems.

No. of Terminals: 72

Having 72 terminals provides ample connectivity options for interfacing with other components.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this product can withstand high heat conditions without performance degradation.

Memory Width: 32

A memory width of 32 bits allows for fast and efficient data processing.

Technical Specifications

DRAM MT8D432M-6X attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FAST PAGE WITH EDO

Maximum Access Time:

60 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

Input/Output Type:

COMMON

JESD-30 Code:

R-XSMA-N72

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

32

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

72

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4MX32

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SSIM72

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Peak Reflow Temperature (C):

235

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

25.654 mm

Self Refresh:

NO

Maximum Standby Current:

.014 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

800 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MT8D432M-6X Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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