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AS4C512M8D4-75BIN

Alliance Memory

AS4C512M8D4-75BIN by Alliance Memory

Alliance Memory's AS4C512M8D4-75BIN is a DDR4 DRAM with 512MX8 organization, operating at 1333 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.

Median Price

$10.304

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 242 parts In-Stock

1+ parts

$8.940

100+ parts

$7.849

1k+ parts

$7.625

10k+ parts

-

242

$8.940

$7.849

$7.625

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RS (Exports)

UK . 242 parts In-Stock

1+ parts

$11.669

100+ parts

$9.028

1k+ parts

-

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242

$11.669

$9.028

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 82 parts In-Stock

1+ parts

$9.381

100+ parts

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82

$9.381

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Kruse Electronics AG

Switzerland . 29,320 parts In-Stock

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29,320

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ARCO, INC.

USA . 29,300 parts In-Stock

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29,300

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Flip Electronics

USA . 10,000 parts In-Stock

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Kruse

Germany . 4,685 parts In-Stock

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4,685

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VNN

France . 2,737 parts In-Stock

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2,737

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Vyrian

USA . 242 parts In-Stock

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242

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 793 parts In-Stock

1+ parts

$3.530

100+ parts

-

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793

$3.530

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Advanced Electronics

New Zealand . 36 parts In-Stock

1+ parts

$3.936

100+ parts

$3.739

1k+ parts

$3.739

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36

$3.936

$3.739

$3.739

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Continental Prestige Electronics

USA . 3,831 parts In-Stock

1+ parts

$9.295

100+ parts

-

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10k+ parts

$9.109

3,831

$9.295

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$9.109

Netroflash

USA . 100 parts In-Stock

1+ parts

$9.381

100+ parts

-

1k+ parts

$8.912

10k+ parts

$8.724

100

$9.381

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$8.912

$8.724

AZTECH Wire

Italy . 281 parts In-Stock

1+ parts

$17.479

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281

$17.479

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Argo Parts USA

USA . 3,566 parts In-Stock

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3,566

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Authorized Procurement Solutions

USA . 484 parts In-Stock

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484

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Overview

Unlock the power of next-generation computing with the AS4C512M8D4-75BIN by Alliance Memory. As a leading manufacturer in the DRAM category, Alliance Memory delivers top-notch quality and reliability. This DDR4 DRAM chip is designed for seamless performance in a variety of applications, from high-speed data processing to efficient multitasking. With a maximum clock frequency of 1333 MHz and a self-refresh mode, this memory module offers exceptional value and benefits to customers looking for cutting-edge technology that enhances their systems' speed and efficiency. Elevate your computing experience with Alliance Memory's AS4C512M8D4-75BIN.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components, ensuring a longer lifespan for the product.

Operating Mode: SYNCHRONOUS

Enables synchronized data transfers, improving overall performance and efficiency.

Nominal Supply Voltage / Vsup (V): 1.2

Efficient power consumption at a standard voltage level, reducing energy costs.

Maximum Clock Frequency (fCLK): 1333 MHz

High clock frequency allows for faster data retrieval and processing speeds.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the reliability of the product.

Technical Specifications

DRAM AS4C512M8D4-75BIN attributes and parameters. Explore more DRAM devices from Alliance Memory

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

1333 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

8

JESD-30 Code:

R-PBGA-B78

Length:

10.6 mm

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

78

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA78,9X13,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

8

Maximum Standby Current:

.044 Amp

Maximum Supply Current:

196 mA

Maximum Supply Voltage (Vsup):

1.26 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.5 mm

Trade Compliance

AS4C512M8D4-75BIN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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