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AS4C512M16D3LA-10BIN

Alliance Memory

AS4C512M16D3LA-10BIN by Alliance Memory

Alliance Memory's AS4C512M16D3LA-10BIN is a 512MX16 DDR DRAM MODULE with 1.35V supply, operating from -40 to 95 °C. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high memory density in a compact grid array package.

Median Price

$52.175

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 273 parts In-Stock

1+ parts

$52.090

100+ parts

$45.425

1k+ parts

$43.324

10k+ parts

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273

$52.090

$45.425

$43.324

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Mouser Electronics

USA . 110 parts In-Stock

1+ parts

$52.260

100+ parts

$44.440

1k+ parts

$42.940

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110

$52.260

$44.440

$42.940

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$26.245

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300

$26.245

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IBS Electronics

USA . 5 parts In-Stock

1+ parts

$140.713

100+ parts

$134.009

1k+ parts

$66.324

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5

$140.713

$134.009

$66.324

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VNN

France . 1,037 parts In-Stock

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1,037

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NAC Semi

USA . 974 parts In-Stock

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$33.920

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974

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Vyrian

USA . 862 parts In-Stock

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Kruse

Germany . 580 parts In-Stock

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Kruse Electronics AG

Switzerland . 9 parts In-Stock

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Distributors (Availability)

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Advanced Electronics

New Zealand . 3,838 parts In-Stock

1+ parts

$2.521

100+ parts

$2.395

1k+ parts

$2.395

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3,838

$2.521

$2.395

$2.395

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Aztec Data Supply Inc.

USA . 2,115 parts In-Stock

1+ parts

$5.080

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$5.080

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Continental Prestige Electronics

USA . 6,179 parts In-Stock

1+ parts

$26.245

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$25.720

6,179

$26.245

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$25.720

Netroflash

USA . 100 parts In-Stock

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$26.245

100+ parts

$25.720

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100

$26.245

$25.720

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Argo Parts USA

USA . 3,864 parts In-Stock

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GreenTree Electronics

Israel . 1,154 parts In-Stock

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Authorized Procurement Solutions

USA . 1,154 parts In-Stock

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1,154

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Overview

Unlock the full potential of your electronic devices with the AS4C512M16D3LA-10BIN by Alliance Memory. As a leading manufacturer in the industry, Alliance Memory delivers top-quality DRAM products that guarantee superior performance and reliability. Ideal for a wide range of applications, this DDR DRAM MODULE offers high-speed data processing capabilities, ensuring seamless operation and enhanced user experience. Upgrade your systems with the AS4C512M16D3LA-10BIN and enjoy the value, benefits, and advantages it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product easy to handle and long-lasting.

Surface Mount: YES

Allows for easy and secure installation on circuit boards, saving time and effort during assembly.

Operating Mode: SYNCHRONOUS

Ensures smooth and coordinated data transfer, improving overall system performance.

Nominal Supply Voltage / Vsup (V): 1.35

Optimal voltage level for efficient power consumption and stable operation.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

Compact and efficient packaging design that saves space on the PCB while maintaining a reliable connection.

Maximum Operating Temperature: 95 °C

High temperature tolerance ensures stability and performance even in demanding industrial environments.

Technology: CMOS

CMOS technology offers low power consumption and high speed, making the product energy-efficient and fast.

Technical Specifications

DRAM AS4C512M16D3LA-10BIN attributes and parameters. Explore more DRAM devices from Alliance Memory

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PBGA-B96

Length:

13.5 mm

Memory Density:

8589934592 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

96

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.425 V

Minimum Supply Voltage (Vsup):

1.275 V

Nominal Supply Voltage / Vsup (V):

1.35

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

9 mm

Trade Compliance

AS4C512M16D3LA-10BIN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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