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AS4C512M16D3LA-10BAN

Alliance Memory

AS4C512M16D3LA-10BAN by Alliance Memory

Alliance Memory's AS4C512M16D3LA-10BAN is a 512MX16 DDR DRAM MODULE with 1.35V supply, operating from -40 to 105 °C. Ideal for industrial applications, it features synchronous operation, self-refresh capability, and multi-bank page burst access mode.

Median Price

$40.850

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kruse Electronics AG

Switzerland . 2,829 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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2,829

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ARCO, INC.

USA . 2,800 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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2,800

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Kruse

Germany . 2,479 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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2,479

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NAC Semi

USA . 180 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$40.850

10k+ parts

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180

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$40.850

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 887 parts In-Stock

1+ parts

$34.310

100+ parts

$26.540

1k+ parts

-

10k+ parts

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887

$34.310

$26.540

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Eastek

USA . 180 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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180

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Overview

Upgrade your electronic devices with the AS4C512M16D3LA-10BAN from Alliance Memory! As a leading manufacturer in the industry, Alliance Memory guarantees high-quality products that meet the demands of various applications. This DDR DRAM module offers exceptional value, reliability, and performance with its synchronous operation, self-refresh capability, and industrial temperature grade. Whether you're looking to enhance the speed and efficiency of your system or increase memory capacity, this thin profile, fine pitch memory IC is the perfect solution. Trust Alliance Memory to deliver cutting-edge technology for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is durable and lightweight, making the product suitable for various applications.

Surface Mount: YES

Surface mount capability allows for easy installation and integration into electronic devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transferred efficiently and reliably within the system.

Nominal Supply Voltage: 1.35V

Low supply voltage helps in reducing power consumption and heat generation, making the product energy efficient.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature range ensures the product can operate in harsh environmental conditions, enhancing its reliability.

Memory Density: 8589934592 bit

High memory density allows for storing large amounts of data, making the product suitable for intensive computing tasks.

Technical Specifications

DRAM AS4C512M16D3LA-10BAN attributes and parameters. Explore more DRAM devices from Alliance Memory

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PBGA-B96

Length:

13.5 mm

Memory Density:

8589934592 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

96

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.425 V

Minimum Supply Voltage (Vsup):

1.275 V

Nominal Supply Voltage / Vsup (V):

1.35

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

9 mm

Trade Compliance

AS4C512M16D3LA-10BAN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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