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MT61K256M32JE-14:A

Micron Technology

MT61K256M32JE-14:A by Micron Technology

Micron Technology's MT61K256M32JE-14:A is a 256MX32 DRAM with synchronous operation and self-refresh capability. It features a memory density of 8Gb, operates at 1.25V, and has a peak reflow temperature of 260°C. Ideal for applications requiring high-speed data processing in graphics systems or other memory-intensive tasks.

Median Price

$17.576

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 388 parts In-Stock

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$24.480

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Avnet

USA . 524 parts In-Stock

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$10.672

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Chip Stock

USA . 5,300 parts In-Stock

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Vyrian

USA . 4,068 parts In-Stock

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Digiode

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Nova Conductors

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Ampacity Inc.

Singapore . 1,271 parts In-Stock

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$5.000

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AZTECH Wire

Italy . 449 parts In-Stock

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$18.260

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Infinite Electronics LLP (Excess)

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GreenTree Electronics

Israel . 10,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,334 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,381 parts In-Stock

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Authorized Procurement Solutions

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Futuretech Components

Singapore . 1,992 parts In-Stock

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Continental Prestige Electronics

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Corphita

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Aranea Global

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Argo Parts USA

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Microchip USA

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Kepictronics

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Overview

Experience unparalleled speed and reliability with the MT61K256M32JE-14:A by Micron Technology. As a leading manufacturer in the industry, Micron ensures top-notch quality and performance for their DRAM products. This versatile memory module is perfect for a wide range of applications, from enhancing gaming experiences to boosting productivity in data-intensive tasks. With its advanced technology and efficient design, this memory module offers exceptional value and benefits to customers looking for seamless performance and reliable storage solutions. Upgrade your system today with Micron's MT61K256M32JE-14:A for a smoother and faster computing experience.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components of the DRAM, ensuring reliable performance over time.

Surface Mount: YES

Allows for easy and efficient installation onto circuit boards, saving time during assembly.

Operating Mode: SYNCHRONOUS

Enhances the speed and efficiency of data transfer within the DRAM, resulting in improved overall performance.

Nominal Supply Voltage / Vsup (V): 1.25

Provides optimal power supply for the DRAM to operate efficiently without consuming excess energy.

Maximum Operating Temperature: 95 °C

Ensures stable operation even in high-temperature environments, making it suitable for a wide range of applications.

Memory Width: 32

Offers a high memory width for faster data processing and retrieval, ideal for tasks that require intensive computing.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high performance, making it an energy-efficient choice for various applications.

Technical Specifications

DRAM MT61K256M32JE-14:A attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PBGA-B180

JESD-609 Code:

e1

Length:

14 mm

Memory Density:

8589934592 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

180

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.2875 V

Minimum Supply Voltage (Vsup):

1.2125 V

Nominal Supply Voltage / Vsup (V):

1.25

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

12 mm

Trade Compliance

MT61K256M32JE-14:A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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