Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Featured manufacturers
Micron Technology's MT61K256M32JE-21:T is a GDDR6 DRAM with 256MX32 organization, operating at 1.25V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in devices like graphics cards or gaming consoles.
Median Price
-
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Suppliers In-Stock
4
In-Stock Inventory
1k+
Chip Stock
1+ parts
100+ parts
1k+ parts
10k+ parts
Vyrian
Digiode
Nova Conductors
Ampacity Inc.
$25.000
Infinite Electronics LLP (Excess)
Argo Parts USA
Continental Prestige Electronics
Aranea Global
Corphita
Speed Components Ltd (Excess)
The use of plastic/epoxy material for the package body provides durability and protection for the DRAM, making it suitable for various environmental conditions.
The surface mount feature allows for easy and convenient installation on circuit boards, saving time and effort during assembly.
The synchronous operating mode ensures precise timing and coordination with other components in the system, leading to efficient performance and data handling.
The nominal supply voltage of 1.25V provides a balance between power consumption and performance, making it energy-efficient and reliable.
The 256MX32 organization allows for high memory capacity and data storage, making it suitable for demanding applications and tasks.
The CMOS technology used in the DRAM ensures low power consumption and high reliability, contributing to overall system efficiency and longevity.
The use of GDDR6 DRAM technology offers fast data transfer speeds and high bandwidth, making it ideal for graphics-intensive applications and gaming.
DRAM MT61K256M32JE-21:T attributes and parameters. Explore more DRAM devices from Micron Technology
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MT61K256M32JE-21:T Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.36
SB
8542.32.00.23
Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.
President, CEO
Sanjay Mehrotra
Executive VP, CFO
Mark J. Murphy
Executive VP, CBO
Sumit Sadana
Fab 4
Fabrication
Fab Initiation
1994
USA
Boise
Wafer Capacity
8,750
Fab 6
1997
Manassas
23,000
2006
28,000
Fab 11
2007
Taiwan
Taoyuan
34,000
Fab 16 A1
Taichung
50,000
Fab 16 A3
2021
3,000
Fab 15
2002
Japan
Hiroshima
98,000
2004
New Hiroshima DRAM Fab
2017
11,750
Fab 10W
2016
Singapore
20,000
Fab 10X
55,000
2019
18,000
Fab 10A
Fab 10N
2014
47,000
2000
32,000
2012
6,000
Fab 16 A2
2015
43,000
New Clay Fab Phase 1
2027
Clay
New Boise Fab 1
2025
Fab 16 A5
2028
Expansion Fab
2020
LM358M
Texas Instruments
LM358M by Texas Instruments is an Operational Amplifier with 2 functions, featuring a max input offset voltage of 9000 uV and a nominal voltage of 5 V. It is commonly used in applications requiring high common mode rejection ratio and low bias current, such as sensor interfaces and signal conditioning circuits.
1N4148WS
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ULN2803ADW
ULN2803ADW by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates b/w -40 to 85 °C and has a max supply voltage of 3 V. Ideal for applications requiring buffer or inverter-based peripheral drivers with sink current flow direction.
1N4148
Leshan Radio
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
MMSZ5245BT1G
Onsemi
MMSZ5245BT1G by Onsemi is a Zener diode with 15V nominal reference voltage, 8.5mA test current, and 16 ohm dynamic impedance. It is used in applications requiring precise voltage regulation in a compact SMD package for temperatures ranging from -55 to 150°C.
NE555/D
General Electric Solid State
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; Maximum Operating Temperature: 70 Cel; Technology: BIPOLAR; Package Equivalence Code: DIE OR CHIP; Qualification: Not Qualified;
M39029/56-351
Defense Logistics Agency
CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Gender: FEMALE; Mating Contacts: M39029/58-363; Removal Tool Sources: MILITARY; Alternate Contact Sources: MILITARY;
SMBJ18CA
Mde Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
350766-1
TE Connectivity
TE Connectivity 350766-1 is a rectangular power connector with 0.25" mating contact pitch, rated for 600V and operating temperatures from -55 to 105°C. It has a durable design with POLYAMIDE insulator material, suitable for commercial applications requiring secure crimp termination in cable mounting setups.
BAV99
Panjit International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
M24308/2-1F
Adi Electronics
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; MIL Conformity: YES; Filter Feature: NO; Mating Info.: MULTIPLE MATING PARTS AVAILABLE;
BSS138
Yangzhou Yangjie Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;
2N7002,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
LM358AN
Samsung
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
LFXTAL025159REEL
Iqd Frequency Products
LFXTAL025159REEL by IQD Frequency Products is a 32.768 kHz crystal oscillator with 20 ppm frequency tolerance and 40,000 ohm series resistance. It is ideal for applications requiring precise timekeeping, such as real-time clocks in IoT devices or microcontrollers in wearables. The surface-mount design with a drive level of 1 uW makes it suitable for compact electronic systems.
2N2222A
General Transistor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
LM555CN
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
LAN8720A-CP-TR
Standard Microsystems
ETHERNET TRANSCEIVER; Temperature Grade: OTHER; Terminal Form: NO LEAD; No. of Terminals: 24; Package Code: HVQCCN; Package Shape: SQUARE;
LM107H/883
Linear Technology
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Technology: BIPOLAR;
Continental Device India
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MT47H128M8SH-25EAIT:M
Micron Technology
Micron Technology's MT47H128M8SH-25EAIT:M is a DDR2 DRAM with 128MX8 organization, operating at 400 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access such as automotive electronics or industrial control systems.
K4T51163QI-HCE7
Samsung's K4T51163QI-HCE7 is a 32MX16 DDR2 DRAM with 84 terminals in a GRID ARRAY package. It operates at 400 MHz, has a memory density of 536870912 bit, and supports a max clock frequency of 0.4 ns. Ideal for applications requiring high-speed data processing and storage capabilities.
MT48LC4M16A2B4-6AIT:J
Micron Technology's MT48LC4M16A2B4-6AIT:J is a 4MX16 Synchronous DRAM with 3.3V supply, operating at 167MHz. It features a very thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast access times and low power consumption.
KMM366S403CTL-G0
Samsung's KMM366S403CTL-G0 is a 4MX64 Synchronous DRAM module with 3.3V supply, operating at 100MHz clock frequency. It features self-refresh capability and offers a memory density of 268MB for applications requiring high-speed data processing in commercial temperature environments.
M471A1K43CB1-CRC
Samsung's M471A1K43CB1-CRC DDR DRAM Module features 1GX64 organization, 64-bit memory width, and 68719476736-bit memory density. Ideal for applications requiring synchronous operation, it has a nominal voltage of 1.2V and operates in a temperature range of 0-85°C.
MT48LC2M32B2P-6AAIT:J
Micron Technology's MT48LC2M32B2P-6AAIT:J is a 3.3V, 2MX32 Synchronous DRAM with 67108864-bit memory density. Operating at -40 to 85 °C, it features a fast access time of 5.4 ns and is ideal for industrial applications requiring high-speed data processing.
MT46H32M16LFBF-6IT:CTR
Micron Technology's MT46H32M16LFBF-6IT:CTR is a DDR1 DRAM with 32MX16 organization, 536870912 bit memory density, and operates at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade. Ideal for applications requiring fast access times and high memory capacity in compact devices.
MT48LC4M32B2P-6AXIT:LTR
Micron Technology's MT48LC4M32B2P-6AXIT:LTR is a 4MX32 Synchronous DRAM with a memory density of 134217728 bits. It operates at a nominal voltage of 3.3V and has a max access time of 5.4 ns. This memory IC is commonly used in industrial applications requiring high-speed data storage and retrieval.
H5TQ4G63MFR-H9C
Sk Hynix
Sk Hynix's H5TQ4G63MFR-H9C is a 256MX16 DDR3 DRAM with 667 MHz clock frequency. It features 256M words, operates at 1.5V, and has a thin profile grid array package. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
IS42S16800F-7TL
Integrated Silicon Solution
IS42S16800F-7TL by Integrated Silicon Solution is a 8MX16 Synchronous DRAM with 143 MHz clock frequency. Operating at 3.3V, it offers 4096 refresh cycles and supports common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
M378T5263AZ3-CF7
Samsung M378T5263AZ3-CF7 DDR DRAM Module features 512MX64 organization, operates at 400 MHz with 1.8V supply voltage. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
MT41J128M16JT-107:K
Micron Technology's MT41J128M16JT-107:K is a DDR3 DRAM with 128MX16 organization, operating at 933 MHz. It features a 1.5V supply voltage and offers 134217728 words of memory. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT40A512M16TB-062EIT:R
Micron Technology's MT40A512M16TB-062EIT:R is a DDR4 DRAM with 512MX16 organization, operating at up to 1600 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory performance in thin-profile devices.
MT48LC4M32B2B5-7:G
SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;
S27KS0642GABHI020
Infineon Technologies
Infineon's S27KS0642GABHI020 DRAM features 8MX8 organization, operates at 200 MHz, and has a memory density of 67108864 bit. Suitable for applications requiring synchronous operation and common I/O type in a compact grid array package with very thin profile.
NT5TU64M16DG-3C
Nanya Technology
NT5TU64M16DG-3C by Nanya Technology is a DDR2 DRAM with 64MX16 organization, operating at 333 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access such as servers, workstations, and networking equipment.
MT41K256M16HA-125AIT:E
Micron Technology's MT41K256M16HA-125AIT:E is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access for high-performance applications in automotive electronics.
MT48LC16M16A2B4-7EIT:G
Micron Technology's MT48LC16M16A2B4-7EIT:G is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz clock frequency. It features a very thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast memory access and low power consumption.
MT8HTF12864HDZ-667H1
MT8HTF12864HDZ-667H1 by Micron Technology is a 128MX64 DDR DRAM MODULE with 400 MHz clock frequency. It operates at 1.8V, has 200 terminals, and supports DUAL BANK PAGE BURST access mode. Ideal for applications requiring high-speed synchronous memory with a memory density of 8589934592 bits.
K4F6E3S4HM-MGCJ
Samsung Electro-mechanics
Samsung Electro-mechanics' K4F6E3S4HM-MGCJ is a LPDDR4 DRAM with 512MX32 organization, 17179869184 bit memory density, and operates at 1.1V. It features a GRID ARRAY package style and is suitable for applications requiring high-speed data processing in devices such as smartphones and tablets.
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MT61M256M32JE-12AAT:A
GDDR6 DRAM; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Alternate Memory Width: 16; No. of Ports: 1;
MT61K512M32KPA-16:BTR
GDDR6 DRAM; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM; Peak Reflow Temperature (C): NOT SPECIFIED;
MT61K256M32JE-14:A
SYNCHRONOUS GRAPHICS RAM; Temperature Grade: OTHER; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.2125 V;
MT61K512M32KPA-16:B
GDDR6 DRAM; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1;
MT61K256M32JE-19G:T
GDDR6 DRAM; Temperature Grade: OTHER; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Access Mode: FOUR BANK PAGE BURST;
MT61K512M32KPA-14:B
GDDR6 DRAM; Temperature Grade: OTHER; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B180;
MT61K256M32JE-12:A
SYNCHRONOUS GRAPHICS RAM; Temperature Grade: OTHER; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Length: 14 mm;
MT61K256M32JE-12:ATR
SYNCHRONOUS GRAPHICS RAM; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN SILVER COPPER;
MT61K256M32JE-13:A
SYNCHRONOUS GRAPHICS RAM; Temperature Grade: OTHER; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;
MT61K256M32JE-14:ATR
SYNCHRONOUS GRAPHICS RAM; Terminal Finish: TIN SILVER COPPER; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30;
MT61K256M32JE-16:A
SYNCHRONOUS GRAPHICS RAM; Temperature Grade: OTHER; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Technology: CMOS;
MT61K512M32KPA-14:BTR
GDDR6 DRAM; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel; Access Mode: MULTI BANK PAGE BURST;
MT61M256M32JE-10AAT:A
GDDR6 DRAM; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.2125 V; Memory Density: 8589934592 bit;
MT61M256M32JE-10N:A
SYNCHRONOUS GRAPHICS RAM MODULE; Temperature Grade: OTHER; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH;
MT61M256M32JE-10NIT:A
SYNCHRONOUS GRAPHICS RAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Technology: CMOS;
MT61M256M32JE-12N:A
SYNCHRONOUS GRAPHICS RAM MODULE; Temperature Grade: OTHER; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Words: 268435456 words;
MT61M256M32JE-12NIT:A
SYNCHRONOUS GRAPHICS RAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.25;
MT61M256M32JE-12NIT:ATR
SYNCHRONOUS GRAPHICS RAM MODULE; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30;
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