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IS42S16100C1-7TL

Integrated Silicon Solution

IS42S16100C1-7TL by Integrated Silicon Solution

IS42S16100C1-7TL by Integrated Silicon Solution is a 1MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz clock frequency. It features dual bank page burst access mode and supports sequential burst lengths of 1,2,4,8. Ideal for applications requiring high-speed memory solutions in commercial temperature grade environments.

Median Price

$3.341

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

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Nova Conductors

Japan . 50 parts In-Stock

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$2.831

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Component Electronics Inc.

Canada . 2 parts In-Stock

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$3.850

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$2.880

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$2.500

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ComSIT Distribution GmbH

Germany . 8,473 parts In-Stock

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Vyrian

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Zilex Electronics Inc.

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Prism Electronics

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Tectiva GmbH

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Freddi Giovanni

Italy . 117 parts In-Stock

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Holdelec - ElecDif-Pro

France . 90 parts In-Stock

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Bristol Electronics

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Component Sense

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Flex Direct, LLC

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J2 Sourcing AB

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R&J Components

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ACDS - Activité Composants Distribution Service

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Inventory MP

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Netroflash

USA . 2,000 parts In-Stock

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$2.831

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$2.774

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$2.689

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$2.633

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$2.831

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$2.633

Argo Parts USA

USA . 1,119 parts In-Stock

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Continental Prestige Electronics

USA . 961 parts In-Stock

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Aztec Data Supply Inc.

USA . 78 parts In-Stock

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$3.445

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Corohmni

South Africa . 673 parts In-Stock

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AZTECH Wire

Italy . 740 parts In-Stock

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Authorized Procurement Solutions

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Lixinc

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Perfect Parts

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Assy Fe

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ChipstoGo Electronic ltd

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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GreenTree Electronics

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Overview

Upgrade your device with the high-quality IS42S16100C1-7TL DRAM from Integrated Silicon Solution. With a reliable manufacturer known for top-notch products, this synchronous memory module offers impressive performance and efficiency for a wide range of applications. Boost your system's speed and productivity with this versatile component that promises seamless operation and enhanced capabilities. Trust ISS for cutting-edge technology that delivers exceptional value and reliability to meet all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material makes the product lightweight and durable.

Operating Mode: SYNCHRONOUS

Synchronous operation mode ensures efficient and high-speed data transfer.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V provides stable performance and energy efficiency.

Maximum Clock Frequency (fCLK): 143 MHz

High clock frequency allows for fast processing and data access speeds.

Memory Density: 16777216 bit

High memory density enables storage of large amounts of data in a compact form factor.

Technical Specifications

DRAM IS42S16100C1-7TL attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

DUAL BANK PAGE BURST

Maximum Access Time:

5.5 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

143 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G50

JESD-609 Code:

e3

Length:

20.95 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

50

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP50,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.002 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

140 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Width:

10.16 mm

Trade Compliance

IS42S16100C1-7TL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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