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IS42S32800J-7BL

Integrated Silicon Solution

IS42S32800J-7BL by Integrated Silicon Solution

IS42S32800J-7BL by Integrated Silicon Solution is an 8MX32 Synchronous DRAM with 143 MHz clock frequency. Featuring a 268MB memory density, it operates at 3.3V and offers a max access time of 5.4 ns. Ideal for applications requiring high-speed data processing in commercial temperature environments.

Median Price

$6.275

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 120 parts In-Stock

1+ parts

$5.060

100+ parts

$4.463

1k+ parts

$4.055

10k+ parts

$3.979

120

$5.060

$4.463

$4.055

$3.979

Mouser Electronics

USA . 448 parts In-Stock

1+ parts

$7.490

100+ parts

$6.770

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448

$7.490

$6.770

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Distributors (In-Stock)

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Nova Conductors

Japan . 28 parts In-Stock

1+ parts

$4.970

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28

$4.970

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Vyrian

USA . 859 parts In-Stock

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859

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Distributors (Availability)

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Continental Prestige Electronics

USA . 4,611 parts In-Stock

1+ parts

$4.970

100+ parts

-

1k+ parts

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10k+ parts

$4.871

4,611

$4.970

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$4.871

AZTECH Wire

Italy . 346 parts In-Stock

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$10.023

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346

$10.023

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QUARKTWIN TECHNOLOGY LTD

USA . 20,738 parts In-Stock

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Lixinc

USA . 6,542 parts In-Stock

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Argo Parts USA

USA . 4,889 parts In-Stock

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4,889

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

$4.871

1k+ parts

$4.721

10k+ parts

$4.622

2,000

-

$4.871

$4.721

$4.622

iodParts Technologies Inc.

India . 299 parts In-Stock

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299

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Overview

Elevate your system's performance with the IS42S32800J-7BL by Integrated Silicon Solution. As a leader in the industry, ISS is renowned for its top-quality products, and this synchronous DRAM is no exception. With a sleek rectangular package design and impressive features like self-refresh capability and common input/output type, this memory module offers unparalleled reliability and efficiency. Ideal for a variety of applications, from consumer electronics to automotive systems, this product provides exceptional value and benefits to customers looking to enhance their devices' speed and functionality. Upgrade to ISS and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ideal for portable devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data transfers are synchronized with the system clock, leading to faster and more efficient performance.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at 3.3V provides a good balance between energy efficiency and performance for a wide range of applications.

No. of Terminals: 90

Having 90 terminals allows for high-speed data transfer and connectivity with other components in the system.

Maximum Clock Frequency (fCLK): 143 MHz

With a high clock frequency, this DRAM can handle demanding tasks and processes data quickly, enhancing overall system performance.

Memory Width: 32

A memory width of 32 bits allows for increased data throughput and faster access to information stored in the DRAM.

Refresh Cycles: 4096

A high number of refresh cycles ensures data integrity and reliability, crucial for maintaining the performance of the DRAM over time.

Technical Specifications

DRAM IS42S32800J-7BL attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

143 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PBGA-B90

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

32

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

90

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8MX32

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA90,9X15,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.004 Amp

Maximum Supply Current:

170 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

10

Width:

8 mm

Trade Compliance

IS42S32800J-7BL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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