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MT48LC32M16A2P-75IT:CTR

Micron Technology

MT48LC32M16A2P-75IT:CTR by Micron Technology

Micron Technology's MT48LC32M16A2P-75IT:CTR is a 32MX16 DRAM with 33554432 words, 16-bit memory width, and 536870912 bit memory density. It operates synchronously at -40 to 85 °C, suitable for industrial applications requiring fast access time of 5.4 ns.

Median Price

$10.321

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 870 parts In-Stock

1+ parts

$10.321

100+ parts

-

1k+ parts

-

10k+ parts

-

870

$10.321

-

-

-

Chip Stock

USA . 15,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,800

-

-

-

-

Vyrian

USA . 7,295 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,295

-

-

-

-

Digiode

USA . 2,406 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,406

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 259 parts In-Stock

1+ parts

$1.000

100+ parts

-

1k+ parts

-

10k+ parts

-

259

$1.000

-

-

-

Corohmni

South Africa . 460 parts In-Stock

1+ parts

$3.005

100+ parts

-

1k+ parts

-

10k+ parts

-

460

$3.005

-

-

-

Aztec Data Supply Inc.

USA . 4,747 parts In-Stock

1+ parts

$4.960

100+ parts

-

1k+ parts

-

10k+ parts

-

4,747

$4.960

-

-

-

Semicontronic

India . 2,030 parts In-Stock

1+ parts

$7.000

100+ parts

$6.825

1k+ parts

$6.790

10k+ parts

-

2,030

$7.000

$6.825

$6.790

-

AZTECH Wire

Italy . 425 parts In-Stock

1+ parts

$9.083

100+ parts

-

1k+ parts

-

10k+ parts

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425

$9.083

-

-

-

Continental Prestige Electronics

USA . 1,756 parts In-Stock

1+ parts

$10.321

100+ parts

-

1k+ parts

-

10k+ parts

$10.114

1,756

$10.321

-

-

$10.114

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$10.321

100+ parts

-

1k+ parts

$9.805

10k+ parts

$9.598

1,000

$10.321

-

$9.805

$9.598

QUARKTWIN TECHNOLOGY LTD

USA . 19,439 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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19,439

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-

-

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Argo Parts USA

USA . 3,335 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,335

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-

-

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Corphita

USA . 609 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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609

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Microchip USA

USA . 256 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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256

-

-

-

-

Overview

Experience high-quality performance and reliability with the MT48LC32M16A2P-75IT:CTR by Micron Technology. As a leading manufacturer in the industry, Micron Technology ensures top-notch products for all your DRAM needs. This versatile memory module is perfect for a wide range of applications, offering seamless operation and innovative features. With a focus on value and customer satisfaction, the MT48LC32M16A2P-75IT:CTR delivers exceptional benefits and advantages, making it the ideal choice for your next project. Elevate your technology with Micron Technology's cutting-edge solutions today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Surface Mount: YES

Being surface mountable makes the installation of this product easy and convenient, especially in compact electronic devices where space is limited.

Operating Mode: SYNCHRONOUS

The synchronous operating mode allows for precise timing and coordination, resulting in efficient data transfer and improved overall performance.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage offers a good balance between power consumption and performance, making it suitable for various applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions and maintain stable performance.

Technical Specifications

DRAM MT48LC32M16A2P-75IT:CTR attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PDSO-G54

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

MT48LC32M16A2P-75IT:CTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.28

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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