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MT8HTF12864HDZ-800M1

Micron Technology

MT8HTF12864HDZ-800M1 by Micron Technology

Micron Technology's MT8HTF12864HDZ-800M1 is a 128MX64 DDR DRAM MODULE with 8589934592 bit memory density. It operates synchronously at 1.8V, featuring dual bank page burst access mode. Ideal for commercial applications, this rectangular microelectronic assembly has a max temperature of 70°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 11,800 parts In-Stock

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11,800

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Vyrian

USA . 3,655 parts In-Stock

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3,655

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Digiode

USA . 2,287 parts In-Stock

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2,287

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Nova Conductors

Japan . 88 parts In-Stock

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88

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 349 parts In-Stock

1+ parts

$18.883

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349

$18.883

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Ampacity Inc.

Singapore . 396 parts In-Stock

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$20.000

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396

$20.000

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Continental Prestige Electronics

USA . 2,653 parts In-Stock

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2,653

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Argo Parts USA

USA . 1,107 parts In-Stock

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1,107

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Bastille Electronics

Australia . 650 parts In-Stock

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650

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Corphita

USA . 465 parts In-Stock

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465

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Overview

Elevate your device's performance with the MT8HTF12864HDZ-800M1 by Micron Technology, a top-of-the-line DDR DRAM MODULE designed to provide seamless and efficient operation. With Micron's reputation for excellence in memory technology and innovation, this product offers unparalleled reliability and speed for a wide range of applications. Whether you're a gamer, content creator, or professional in need of high-speed memory, this DRAM module is the perfect solution to boost your system's capabilities. Experience the difference with Micron Technology and elevate your computing experience today.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape allows for efficient and compact packaging, making it easy to integrate into various devices and systems.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise and coordinated data transfer, leading to faster and more efficient performance.

Self Refresh: YES

Self-refresh capability helps in conserving power and maintaining data integrity during idle or low-power states.

Nominal Supply Voltage (Vsup): 1.8V

Operates at a standard voltage level, ensuring compatibility with a wide range of systems and reducing the risk of damage due to voltage fluctuations.

No. of Terminals: 200

Having a high number of terminals allows for more connections and better data transmission capabilities, improving overall performance.

Maximum Operating Temperature: 70 °C

Capable of operating at high temperatures without compromising performance, making it suitable for demanding environments.

Organization: 128MX64

Organized in a 128 megabit by 64 configuration, providing a good balance between storage capacity and data access speed.

Minimum Operating Temperature: 0 °C

Capable of operating in low-temperature environments without any issues, ensuring reliability in a wide range of conditions.

Technical Specifications

DRAM MT8HTF12864HDZ-800M1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

DUAL BANK PAGE BURST

Additional Features:

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX

JESD-30 Code:

R-XDMA-N200

Length:

67.6 mm

Memory Density:

8589934592 bit

Memory IC Type:

Memory Width:

64

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

200

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128MX64

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Maximum Seated Height:

30.15 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.9 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Width:

3.8 mm

Trade Compliance

MT8HTF12864HDZ-800M1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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